• Title/Summary/Keyword: PbO free

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Preparation and properties of PbO free dielectric paste for PDP barrier rib (PDP 격벽용 무연 유전체 paste의 제조 및 특성)

  • Son, Myung-Mo;Lee, Heon-Soo;Lee, Sang-Geun;Park, Hee-Chan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.876-879
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    • 2003
  • The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system $BaO-ZnO-B_2O_3-V_2O_5$. DTA, XRD and SEM were used to study and characterize $BaO-ZnO-B_2O_3-V_2O_5$ glasses. PbO free paste developed at this paper has thermal expansion of $74{\times}10^{-7}/^{\circ}C$, DTA transformation point of $460^{\circ}C$, and firing condition of $560^{\circ}C$, 10min.

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Preparation and properties of PbO Free for PDP Rib Paste (PDP용 무연프리트 유리의 제조 및 특성)

  • Son, Myung-Mo;Lee, Heon-Soo;Lee, Chang-Hee;Lee, Sang-Geun;Park, Hee-Chan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.524-525
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    • 2005
  • The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system $ZnO-B_2O_3-Bi_2O_3-SiO_2$, DTA, and XRD were used to characterize $ZnO-B_2O_3-Bi_2O_3-SiO$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA transformation point of $470^{\circ}C$, and firing condition of $540^{\circ}C$, 20min.

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Preparation and properties of BaO-ZnO-$B_2O_3-V_2O_5$ glass for PDP dielectric paste (PDP 유전체용 BaO-ZnO-$B_2O_3-V_2O_5$ 유리의 제조 및 특성 변화)

  • Son, Myung-Mo;Lee, Sang-Geun;Park, Hee-Chan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.295-298
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    • 2003
  • The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system BaO-ZnO-$B_2O_3-V_2O_5$. DTA, XRD and SEM were used to study and characterize BaO-ZnO-$B_2O_3-V_2O_5$ glasses. PbO free paste developed at this paper has thermal expansion of $74{\times}10^{-7}/^{\circ}C$, DTA transformation point of $460^{\circ}C$, and firing condition of $560^{\circ}C$, 10min.

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Preparation and properties of BaO-ZnO-$B_2O_3$-$V_2O_5$-$SiO_2$ Glass for PDP paste (PDP용 BaO-ZnO-$B_2O_3$-$V_2O_5$-$SiO_2$계 glass past의 제조와 특성)

  • Son, Myung-Mo;Lee, Heon-Soo;Lee, Chang-Hee;Lee, Sang-Geun;Park, Hee-Chan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1096-1099
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    • 2004
  • The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system BaO-ZnO-$B_2O_3$-$V_2O_5$. DTA, and XRD were used to characterize BaO-ZnO-$B_2O_3$-$V_2O_5$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA softening point of $460^{\circ}C$, and firing condition of $520^{\circ}C$, 20min

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A Compositional Design of Low Melting Lead-free Glass (저융점 Lead-free glass의 조성설계)

  • Lee, Young-Hun;Choi, Byung-Hyun;Kim, Sei-Ki;Lee, Mi-Jai;Lee, Hong-Lim
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.453-454
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    • 2005
  • PDP에 사용되는 유전체, 격벽재, 봉착재 등의 glass들은 모두 PbO를 다량 함유하는 저융점 유리조성계로 되어있다. 최근 환경규제에 따라 Pb 대체 재료의 개발이 필요하게 되었으며, 그에 대한 많은 연구들이 진행되고 있다. 본 연구에서는 투명 유전체를 겨냥한 저융점 이면서 무해한 3성분계 Pb-free 유리를 제조하였다. 또한 SnO 계 유리와의 혼합 용융에 의한 영향을 고찰하였으며, 유리로서의 고유물성과 응용용도별 특성을 함께 고찰하였다.

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Effect of $BaTiO_3$ according to $(Bi_{0.5}Na_{0.5})TiO_3$ for Pb-free PTC (Pb-free PTC에 있어서 $(Bi_{0.5}Na_{0.5})TiO_3$ 첨가에 따른 $BaTiO_3$ 효과)

  • Lee, Mi-Jai;Paik, Jong-Hoo;Kim, Sei-Ki;Kim, Bip-Nam;Lee, Woo-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.57-58
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    • 2008
  • PTC thermistor are characterized by an increase in the electrical resistance with temperature. The PTC materials of middle Curie point were produced or that of high Curie point (above $200^{\circ}C$), it was determined that compositional modifications of $Pb^{2+}$ for $Ba^{2+}$ produce change sin the Curie point to higher temperature. PTC ceramic materials with the Curie point above $120^{\circ}C$ were prepared by adding $PbTiO_3$, PbO or $Pb_3O_4$ into $BaTiO_3$. Thereby, adding $Pb^{2+}$ into $BaTiO_3$-based PTC material to improve Tc was studied broadly, however, weal know that PbO was poisonous and prone to volatilize, then to pollute the circumstance and hurt to people, so we should dope other innocuous additives instead of lead to increase Tc of composite PTC material. In order to prepare lead-free $BaTiO_3$-based PTC with middle Curie point, the incorporation on $Bi_{1/2}Na_{1/2}TiO_3$ into $BaTiO_3$-based ceramics was investigated on samples containing 0, 1, 2, 3, 4, and 50mol% of $Bi_{1/2}Na_{1/2}TiO_3$. $Bi_{1/2}Na_{1/2}TiO_3$ was compounded as standby material by conventional solid-state reaction technique. The starting materials were $Bi_{1/2}Na_{1/2}TiO_3$, $BaCO_3$, $TiO_2$ and $Y_2O_3$ powder, and using solid-state reaction method, too. The microstructures of samples were investigated by SEM, DSC, XRD and dielectric properties. Phase composition and lattice parameters were investigated by X-ray diffraction.

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Electrical Properties of $Ba_{1-x}(Bi_{0.5}K_{0.5})TiO_3$ according to $(Bi_{0.5}K_{0.5})TiO_3$ for Pb-free PTC (Pb-free PTC에 있어서 $(Bi_{0.5}K_{0.5})TiO_3$ 첨가에 따른 $Ba_{1-x}(Bi_{0.5}K_{0.5})TiO_3$의 전기적특성)

  • Lee, Mi-Jai;Choi, Byung-Hyun;Paik, Jong-Hoo;Kim, Bip-Nam;Lee, Woo-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.35-36
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    • 2008
  • PTC thermistor are characterized by an increase in the electrical resistance with temperature. The PTC materials of middle Curie point were produced or that of high Curie point (above $200^{\circ}C$), it was determined that compositional modifications of $Pb^{2+}$ for $Ba^{2+}$ produce change sin the Curie point to higher temperature. PTC ceramic materials with the Curie point above $120^{\circ}C$ were prepared by adding $PbTiO_3$, PbO or $Pb_3O_4$ into $BaTiO_3$. Thereby, adding $Pb^{2+}$ into $BaTiO_3$-based PTC material to improve Tc was studied broadly, however, weal know that PbO was poisonous and prone to volatilize, then to pollute the circumstance and hurt to people, so we should dope other innocuous additives instead of lead to increase Tc of composite PTC material. In order to prepare lead-free $BaTiO_3$-based PTC with middle Curie point, the incorporation on $Bi_{1/2}K_{1/2}TiO_3$ into $BaTiO_3$-based ceramics was investigated on samples containing 0, 1, 2, 3, 4, and 50mol% of $Bi_{1/2}K_{1/2}TiO_3$. $Bi_{1/2}K_{1/2}TiO_3$ was compounded as standby material by conventional solid-state reaction technique. The starting materials were $Bi_2O_3$, $K_2CO_3$, $BaCO_3$ and $TiO_2$ powder, and using solid-state reaction method, too. The microstructures of samples were investigated by SEM, DSC, XRD and dielectric properties. Phase composition and lattice parameters were investigated by X-ray diffraction.

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Dielectric Characteristics of Different Filler Content in Pb-free White Dielectric Layer (Pb-free 백색유전체에서 filler함량에 따른 유전체 특성)

  • An, Yong-Tae;Choi, Byung-Hyun;Lee, Jung-Min;Jee, Mi-Jung;Kim, Hyung-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.36-36
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    • 2007
  • $R_2O_3$(R=Bi, B)-RO(R=Ba, Zn)를 주성분으로 하는 Pb-free유리프리트에 높은 굴절률을 가지고 있는 $TiO_2$ filler를 첨가하여 PDP용 백색유전체를 제조하였다. $TiO_2$ type, 함량에 따른 백색유전체로의 반사율 및 유전 특성을 조사하였다. 백색유전체를 소성한 결과 rutile과 anatase를 중량비로 75:25로 혼합하여 $520^{\circ}C$에서 소성한 경우 밀도 및 수축율의 변화를 거의 나타나지 않았다. 그러나 $TiO_2$함량이 15wt.%를 혼합하여 첨가했을 경우 반사율은 높고 접합특성 또한 우수하였다. 또한, 유전상수는 $TiO_2$첨가량이 증가함에 따라 증가하는 경향을 나타내었다.

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Fabrication of Undoped PbTiO3 Ceramics via Sol-Gel Processing (Sol-Gel Processing에 의한 순수 $PbTiO_3$ Ceramics 제조)

  • 김선욱;윤만순;임종인;김성숭;김남흥
    • Journal of the Korean Ceramic Society
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    • v.29 no.3
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    • pp.211-215
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    • 1992
  • Crack free PbTiO3 ceramics were produced by sol-gel processing using alkoxide, which has not been reported to be successful. The PbTiO3 gels were prepared from Ti alkoxide and lead acetate without any dopants. They were calcined at $600^{\circ}C$ and miled to produce fine PbTiO3 powder. It was pressed into discs and they were sintered at 110$0^{\circ}C$ for a few hours. The sintered ceramics were relativley hard and dense as having about 96% of theoretical density of PbTiO3. Fabrication of pure PbTiO3 ceramics by sol-gel processing is possibly due to their small grain size and uniform distribution of residual stress created during cubic-tetragonal transition over large number of small grains in fine grain PbTiO3 ceramics.

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Preparation Pb free frit for Ag Paste in PDP application (PDP적용 Ag paste의 Pb free frit개발)

  • 김형수;최정철;최승철
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2002.11a
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    • pp.101-103
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    • 2002
  • PDP등의 각종 전자부품에 사용되는 Ag paste 의 frit은 주로 PbO를 주성분으로 하는 물질이 사용되어왔다. 그러나 이러한 Pb계 재료는 환경유해한물질로 규제대상이 되고 있다. 이에 대비하여 본 연구에서는 Bi$_2$O$_3$을 주성분으로 하여 B$_2$O$_3$, SiO$_2$, A1$_2$O$_3$가 함유된 새로운 frit을 개발하였다. TMA등을 이용하여 열적 특성을 관찰하였으며, 전극용 Ag-Paste를 제조한 후 스크린프린팅하여 인쇄성과 미세구조를 관찰하였고, 전기저항 및 소성두께를 측정하였다. 또한 전이온도, 연화점, 열팽창계수등을 조사하여 기존의 Pb함유 frit과 물성을 비교하였으며 PDP용 Ag전극에 적용하는 새로운 frit으로의 가능성을 검토하였다.

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