• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.259-262
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• 1998

PbTi $O_3$ family ceramics can be used for the piezoelectric transformer using thickness extensional vibration mode because it is a material with the large anisotropy between electromechanical coupling factors $k_{t}$ and $k_{p}$. However, PbTi $O_3$ family ceramics have a difficult poling condition on account of its large anisotrophy. In this study, the structural and piezoelectric properties of (P $b_{0.76}$ $Ca_{0.24}$)[ $Ti_{0.96}$(M $n_{1}$3/S $b_{2/3}$)$_{0.04}$] $O_3$ system ceramics were investigated as a function of poling voltage in order to find the best poling condition.ion.n.n.ion.n.

• 전기의세계
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• v.23 no.5
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• pp.61-65
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• 1974

Ba-ferrite and Sr-ferrite are mostly used for permanent magnetic materials. In this work, we investigated Pb-ferrite which is studying now at abroad. We studied the most appropriate mole percent of PbO to Fe$_{2}$O$_{3}$, calcinating temperature and time, sintering temperature and time, and further investigated effects of the annex(NaBiO$_{3}$) The method of appraisment is the microscope for meta and B-H curve by flaxmeter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.593-598
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• 2003

In this paper, 3rd overtone mode energy-trapped filter using modified PbTiO$_3$ system ceramics was manufactured to apply for intermediate frequency(IF) SMD type fillet with splitted electrode and gap size. To investigate the effects of splitted electrode and gap size on filter characteristics of 3rd overtone mode energy-trapped filter, ceramic wafers were fabricated by etching splitted rectangular electrode size(b$\times$d) of b=0.4, 0.6, 0.8, 1mm, d=0.3, 0.4, 0.5, 0.6mm and gap size(c) c=0.2, 0.3, 0.4, 0.6mm, respectively. And then, SMD type ceramic filter were fabricated with the size of 3.7$\times$3.1$\textrm{mm}^2$. SMD type ceramic filter with the size of b=0.8mm, d=0.4mm and gap(c)=0.4mm, which showed insertion loss of 2.951dB, 3dB bandwidth of 54.7kHz and 20dB stop bandwidth of 129.27kHz, was suitable for IF bandpass filter application.

• Korean Journal of Environmental Biology
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• v.34 no.3
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• pp.193-200
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• 2016

Toxicity assessment of heavy metals (As, Cr and Pb) has been investigated by using the rate of survival and population growth(r) of marine rotifer, Brachionus plicatilis. The survival rate was determined after 24 hours of exposure to As, Cr and Pb. As and Cr reduced survival rate in dose-dependent manner and a significant reduction were occurred at concentration of greater than 30 and $150mg\;L^{-1}$, but Pb had no effect on survival rate. The r was determined after 72 hours of exposure to As, Cr and Pb. As, Cr and Pb reduced r in dose-dependent manner and a significant reduction were occurred at concentration of greater than 5, 25 and $50mg\;L^{-1}$. The toxicity of heavy metals were ranked As>Cr>Pb, with $EC_{50}$ values of 12.98, 82.34 and $110.14mg\;L^{-1}$, respectively. The no-observed-effect-concentration (NOEC) of r in As, Cr and Pb exposure were 1, 12.5 and $50mg\;L^{-1}$, respectively. The lowest-observed-effect-concentration (LOEC) of r in As, Cr and Pb exposure were 5, 25, and $50mg\;L^{-1}$, respectively. From the results, the concentration of As, Cr and Pb (greater than 5, 25 and $50mg\;L^{-1}$, respectively) have toxic effect on the r of B. plicatilis in natural ecosystems. These results (including NOEC and $EC_{50}$) might be useful for the mixing toxicity assessment and toxic guide line of heavy metals in marine ecosystems.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1095-1098
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• 2004

In this study, $Bi_2O_3-B_2O_3-ZnO$ glass system, which was expected to have similar properties with PbO containing glass system, was selected as a PbO replaceable potential composition because the atomic weight and ionic radius of Bi is similar to those of Pb. Glasses with different modifier/former ratio were prepared by melting the raw ingredient mixtures in $Bi_2O_3-B_2O_3-ZnO$ system, and the thermal and electrical properties of the sintered samples were examined. The glass transition temperatures and the dielectric constant of the glass pellets were between 350 $^{\circ}C{\sim}$500 $^{\circ}C$ and 15-35, respectively.

• Electrical & Electronic Materials
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• v.5 no.2
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• pp.207-215
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• 1992

본 연구에서 xPb(A $l_{0.5}$N $b_{0.5}$) $O_{3}$-(1-x)Pb(Z $r_{0.52}$ $Ti_{o.48}$) $O_{3}$계의 조성변화에 따른 유전 및 압전특성에 관해 실험한 결과 다음과 같은 결론을 얻었다. PAN의 첨가량이 증가함에 따라 c축은 수축되고 a축은 팽창하여 tetragonality는 감소하였고 grain의 크기와 Curie온도 또한 PAN의 첨가량에 따라 감소하였으나 밀도와 유전상수는 PAN의 양이 5mol%까지 증가하다가 그 이상에서는 감소하는 경향을 보였다. PAN의 첨가량이 증가함에 따라 시편의 비저항은 증가하였고 Kp는 PAN의 양이 5mol%첨가시 60%로 최대치를 보였으나 Qm은 최소치를 나타내었다.다.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.184-189
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• 2002

This study, compared with data of PbO-base glass system is a part of new glass composition design with Bi-base composition for PDP Rib. As $Bi_2O_3-B_2O_3-ZnO$ glass composition including Bi, which have similar density value and work facility to PbO, properties of softening point, thermal expansion coefficient, chemical durability, dielectric constant, and structural changing by XPS were investigated. $Bi_2O_3-B_2O_3-ZnO$ glass system, added 50∼80 wt% $Bi_2O_3$ widely, were presented 400∼480$^{\circ}C$ softening temperature, $68{\sim}72{\times}10^{-7}/^{\circ}C$ thermal expansion coefficient and 13∼25 dielectric constant. These results were showed similar physical properties with Pb-base glass system of same composition content, application possibility as starting composition of rib material was identified through micro-control of components and physical properties. The bonding energy of $O_{1s}$ as the $Bi_2O_3$ content decreasing was increased and full width at half-maximum (FWHM) was decreased, which is caused by non-bridging oxygen increasing.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.839-845
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• 1995

The structural and dielectric properties of Pb(Mg1/3Nb2/3)O3 ceramics substituted by Nd3+, La3+, K+ and Na+ were studied over 0~50 at.% substituent content. The 1 : 1 ordering behavior of Mg2+ and Nb5+ ions in the B site sublattice was observed in Nd3+-and La3+-modified compounds. The degree of ordering was increased with Nd3+, La3+ content in the compounds. But K+-or Na+-modified compounds did not exhibit the ordering behavior. This was explained by charge and size effect of A and B site cations and oxygen vacancies. As the mole fractions of substituent increased, the maximum values of dielectric constants were rapidly decreased and the phase transitions were broadened. Phase transition temperature was correlated with the covalency of A-O and B-O bonding.

• Toxicological Research
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• v.3 no.1
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• pp.1-8
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• 1987

In vitro induction of cytochrome 450 associated monooxygenase activities by phenobarbital (PB) and 3-methylcholanthrene (MC) was investigated in primary cultures of adult rat hepatocytes. PB and MC were added to the culture 24 hr after the initial plating of hepatocytes. A signiftcant increase of the activities of 7-ethoxycoumarin 0-deethylase and aryl hydrocarbon hydroxylase were observed in MC and PB treated culture. MC caused about 500% induction of the initial oxidation rates of both enzymes in 48 hr. However the PB maintained both enzyme activities close to the level of freshly isolated hepatocytes. Biphenyl 4-hydroxylase and aminopyrine N-demethylase activities were also induced by MC and PB. But the level of induction was less than that occuring with 7-ethoxycoumarin 0-deethylase and aryl hydrocarbon hydroxylase. When aflatoxin $B_1$ was added to the hepatocyte cultures which have been treated with MC or PB, it caused a significant increase of the unscheduled DNA synthesis at higher dose of aflatoxin $B_1$ as compared to those of untreated control hepatocyte cultures. The results suggest that microsomal enzyme activities can be selectively controlled preferably in hepatocyte cultures by the in vitro induction method. This principle may be useful for studying the metabolism and other toxicological studies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.143-148
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• 2001

PbWO$_4$ can be densified at 85$0^{\circ}C$ and it shows fairy good microwave dielectric properties; dielectric constant($\varepsilon$$_{r}$) of 21.5, quality factor(Q $\times$f$_{0}$) of 37,224 GHz, and temperature coefficient of resonant frequency($\tau$/suf f/) of -31ppm/$^{\circ}C$. Due to its low sintering temperature, PbWO$_4$ can be used as a multilayered chip component at microwave frequency with high electrical performance by using high conductive electrode metals such as Ag and Cu. However, in order to use this material for microwave communication devices, the $\tau$$_{f}$ of PbWO$_4$ must be stabilized to near zero with high Q$\times$f$_{0}$. In present study, PbWO$_4$ was modified by adding TiO$_2$, B$_2$O$_3$, and CuO in order to improve the microwave dielectric properties without increasing the sintering temperature. The addition of TiO$_2$ increased the $\tau$$_{f}$ and $\varepsilon$$_{r}$, due to its high rr(200ppm/$^{\circ}C$) and $\varepsilon$$_{r}$(100). However, the addition of TiO$_2$ reduced the Q$\times$f$_{0}$ value. When the mot ratio of PbWO$_4$ and TiO$_2$ was 0.913:7.087, near zero $\tau$$_{f}$(0.2ppm/$^{\circ}C$) was obtaibed with $\varepsilon$$_{r}$=22.3, and Q$\times$f/$_{0}$=21,443GHz. With this composition, various amount of B$_2$O$_3$ and CuO were added in order to improve the quality factor. The addition, of B$_2$O$_3$ decreased the $\varepsilon$$_{r}$. However, increased Q$\times$f$_{0}$ and $\tau$$_{f}$. When 2.5 wt% of B$_2$O$_3$ was added to the 0.913PbWO$_4$-0.087TiO$_2$ ceramic, $\tau$$_{f}$ =8.2, $\varepsilon$$_{r}$=20.3, Q$\times$f$_{0}$=54784 GHz. When CuO added to the 0.913PbWO$_4$-0.087TiO$_2$ ceramic, $\tau$$_{f}$ was continuously decreased. And $\varepsilon$$_{r}$ . and Q$\times$f$_{0}$ were increased up to 1.0 wt% then decreased. At 0.1 wt% of CuO addition, the 0.913PbWO$_4$-7.087Ti0$_2$ Ceramic Showed $\varepsilon$$_{r}$=23.5, $\tau$$_{f}$=4.4ppm/$^{\circ}C$, and Q$\times$f$_{0}$=32,932 GHz.> 0/=32,932 GHz.X>=32,932 GHz.> 0/=32,932 GHz.