• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.09a
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• pp.233-241
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• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces strictly related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.09a
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• pp.211-219
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• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces stric시y related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials. In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.427-427
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• 2016

Organic-inorganic hybrid perovskite have attracted significant attention as a new revolutionary light absorber for photovoltaic device due to its remarkable characteristics such as long charge diffusion lengths (100-1000nm), low recombination rate, and high extinction coefficient. Recently, power conversion efficiency of perovskite solar cell is above 20% that is approached to crystalline silicon solar cells. Planar heterojunction perovskite solar cells have simple device structure and can be fabricated low temperature process due to absence of mesoporous scaffold that should be annealed over 500 oC. However, in the planar structure, controlling perovskite film qualities such as crystallinity and coverage is important for high performances. Those controlling methods in one-step deposition have been reported such as adding additive, solvent-engineering, using anti-solvent, for pin-hole free perovskite layer to reduce shunting paths connecting between electron transport layer and hole transport layer. Here, we studied the effect of alkali metal halide to control the fabrication process of perovskite film. During the morphology determination step, alkali metal halides can affect film morphologies by intercalating with PbI2 layer and reducing $CH3NH3PbI3{\cdot}DMF$ intermediate phase resulting in needle shape morphology. As types of alkali metal ions, the diverse grain sizes of film were observed due to different crystallization rate depending on the size of alkali metal ions. The pin-hole free perovskite film was obtained with this method, and the resulting perovskite solar cells showed higher performance as > 10% of power conversion efficiency in large size perovskite solar cell as $5{\times}5cm$. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) are analyzed to prove the mechanism of perovskite film formation with alkali metal halides.

• Journal of Environmental Health Sciences
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• v.19 no.2
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• pp.46-54
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• 1993

This study was carried out on the stabilized/solidified treatment for the reducing leachability of hazardous heavy metals copper, lead, chromium and cadmium in the hazardous sludge which treated to be unleached heavy metals by sodium diethyl dithiocarbamate. Cement matrix was analyzed for the leachability of 24 hrs and dynamic leaching test, structure and the optimum condition for the stabilization and solidification of the hazardous sludge. In 28 days of curing time the unconfined compressive strength was 21.5 kg/cm$^2$ at the ratio of portland cement (0.5)+fly ash (0.25) and 23.5 kg/cmz at the ratio of portland cement (0.5)+fly ash (0.25) + cake (0.25). High concentration of Pb, Cr and Cd in the sea water and Cu in the distilled water were leached at the dynamic leaching test. The concentration of leaching heavy metals for specimens which were tested 24 hrs were found low leachability with decreasing pH of leachant. According to dynamic leaching test, the low level of copper, lead, cadmium and chromium were leached in the cement matrix with sodium diethyl dithiocarbamate. But the effective diffusion coefficient of unleached cement matrix which was treated sodium diethyl dithiocarbamate was decreased above 2 times than that of cement matrix. The relation of leachant renewal period (Y) and cumulative fraction ion leached (X) was the following regression equations. Solidification with unleached agent. Y$_{Cu}$ = 1413752X + 247, Y$_{Pb}$ = 223501IX + 214, Y$_{Cr}$ = 8310601X - 472, Y$_{Cd}$ = 168787X + 1061 The structure of' solidified matrix with X-ray diffraction analysis was composed more Ca(OH)$_2$, Si, Mg(OH)$_2$ and Al in the unleached cement matrix than those in cement matrix.

• Journal of the Korean Chemical Society
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• v.23 no.3
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• pp.180-185
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• 1979

Electrochemical reduction behavior from 2-butyne-1, 4-diol (BID) to 2-butene-1,4-diol (BED) by the use of various cathodes, such as Ti, Zr, Ni, Pt, Cu, Ag, Au, Zn, Hg, Pb and graphite has been studied. It has been found that cathodic polarization curve with metal of IB subgroup such as Cu, Ag and Au consisted of one wave in BID-alkaline solution, whereas it was not formed any wave in BED solution. Therefore, it was found that the cathode which was the most suitable in order to proceed in this reaction was Cu, Ag and Au. At cyclic voltammetry using a silver cathode in BID-alkaline solution, the current of the peak was proportional to square root of the sweep rate of potential and also proportional to concentration of BID. Activation energy was calculated for 3.75 kcal/mole from the plot of log $I_l$ vs. 1/T. Consequently, the reduction current of BID with a silver cathode in alkaline solution was found the diffusion current.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.211-214
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• 2002

Properties of 52/48 PZT films with various thicknesses for piezoelectric micro-electro mechanical systems (MEMS) devices fabricated by multi-coating method on $Pt(3500{\AA})/Ti(400{\AA})/SiO_2(3000{\AA})/Si$(525$\mu\textrm{m}$) substrates were investigated. PZT films were deposited by spin-coating process at 3500 rpm for 30 sec, followed by pyrolysis at 45$0^{\circ}C$ for 10 min producing the thickness of about 120nm. These processes were repeated 4, 8, 12, 16 and 20 times in order to have various thicknesses, respectively. Finally, they were crystallized at $650^{\circ}C$ for 30 min. All thick PZT films showed dense and homogeneous surface microstructures. Thick PZT films showed crystalline structures of random orientations with increasing thickness. Dielectric constants of thick PZT films were increased with increasing film thickness and reached 800 at 100kHz for 2.3$\mu\textrm{m}$ thick PZT film. $P_r\; and\; E_c$ of 2.3$\mu\textrm{m}$ thick PZT films were about 20$\mu$C/$\textrm{cm}^2$ and 63kV/cm. Depth profile analysis by Auger Electron Spectroscopy (AES) of 4800 $\AA$ thick PZT film showed the formation of the perovskite phase on Pt layer by Pb diffusion behavior. It was considered that Pb-Pt intermediate layer promoted PZT (111) columnar structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.190-194
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• 2003

Dielectric thin films of (P $b_{0.72}$,L $a_{0.28}$) $Ti_{0.93}$ $O_3$ (PLT(28)) have been deposited on Pt(111)/Ti/ $SiO_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition Processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. We have tried to form the film by a two-step deposition process In order to improve electrical property. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film and to reduce the leakage current characteristics. Structural properties and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step Process including pre-annealing treatment has a strongly(111) orientation. However, the films deposited by using single -step process with hydrogen annealing process show the smallest grain size. The film deposited by using two-step process including pre-annealing treatment shows the leakage current density of below 10$^{-7}$ A/c $m^2$ for the field of smaller than 100 kV/cm. However, the films deposited by using single-step process with hydrogen annealing process and pre-annealing process show worse leakage current density than the film deposited by using two-step process including pre-annealing treatment.tment.

• Journal of the Korean Chemical Society
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• v.28 no.5
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• pp.315-322
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• 1984

The dependence of polarographic parameters on the pressure for the reduction of In(III), Cr(III), Cd(II), Pb(II), Mn(II), Co(II), Tl(I) in 0.1M KCl aqueous solution at the dropping mercury electrode have been discussed. In this experiment the temperature varied from $25^{\circ}C\;to\;35^{\circ}C$ and the pressure ranges from 1 atmosphere to 1,800 atmospheres. By increasing the pressure the reduction half-wave potentials of all metal ions are shifted markedly to more negative values and the diffusion currents of all metal ions become considerably larger. The slope of the linear relationship of E vs. log[$\frac{id-i)}{i}$] become much larger with increase in pressure, which indicates more irreversible reduction. The temperature coefficient observed over the range of the temperature from $25^{\circ}C\;to\;35^{\circ}C$ are not sensitive with increase in pressure.

• Journal of the Mineralogical Society of Korea
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• v.25 no.2
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• pp.85-94
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• 2012

The $AsO_4$ ion in acid mine drainage has been known to substitute for $SO_4$ in schwertmannite and prevent schwertmannite from being converted to goethite. There have been studies on the heavy metal sorption on schwertmannite, but no experimental results have been reported on the characteristics of heavy metal sorption on $AsO_4$-substituted schwertmannite. In this study, we conducted sorption experiments of Cu, Pb, and Zn on the $AsO_4$-substituted schwertmannite at pH 4 and 6 in the solution of 3, 10, 30, and 100 mg/L concentrations. For all heavy metals, the sorbed heavy metals significantly increase at pH 6 compared with at pH 4. At both pH 4 and 6, Pb shows the highest sorption capacity and those of Cu and Zn are similar. With increasing time, the sorbed heavy meal contents increase too. However, in the case of Zn, the most sorptions occur at the initial stage and no significant increase is observed with time. Among the concentration ranges in which we conducted the experiment, the increasing trend is clear in high concentrated solutions such as 100 mg/L. We applied several sorption kinetic model and it shows that the diffusion process may be the most important factor controlling the sorption kinetics of Cu, Pb, and Zn on $AsO_4$-substituted schwertmannite. Considering the previous results that pure schwertmannite has similar sorption capacity for all three heavy metals at pH 6 and has higher sorption capacity for Cu and Pb than Zn at pH 4, our experiments indicates that substitution of $AsO_4$ for $SO_4$ on schwertmannite changes surface and sorption characteristics of schwertmannite. It also shows that $AsO_4$ contributes not only to the stability of schwertmannite, but also to the mobility of heavy metals in acid mine drainage.

• Journal of the Korean Geotechnical Society
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• v.24 no.6
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• pp.17-25
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• 2008

Permeable reactive barriers (PRBs) technology can be applied to contaminated groundwater remediation. It is necessary to select adequate reactive material according to contaminant characterization. In groundwater. In this research, the reaction between reactive material and heavy metal contaminants was estimated through batch test. Reactive material was slag, which has been produced in Gwangyang power plant, and heavy metal contaminants were cadmium, lead and copper. Batch test consisted of two testes: 1) sorption equilibrium test and 2) sorption kinetic test. Sorption equilibrium test was performed for estimating slag sorption capacity against contaminants. And sorption kinetic test was performed for slag sorption rate with contaminants species, contaminants initial concentration and sulfate. Sorption capacity and sorption rate were affected by contaminant species. Sorption rate increased with increasing initial concentration in lead and copper but decreased with increasing initial concentration in cadmium. Sorption rate increased in existing sulfate. In low concentration, film diffusion was domain mechanism, and in high concentration, particle diffusion was domain mechanism.