• Title/Summary/Keyword: Pb diffusion

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Adsorption Behavior of Pb2+ Ions on Alginate Beads and Capsules (알지네이트 비드와 캡슐에서의 납 이온의 흡착거동)

  • Shin, Eun Woo;Thuong, Nguyen Thi Lien;Yoo, Ik-Keun
    • Korean Chemical Engineering Research
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    • v.45 no.2
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    • pp.166-171
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    • 2007
  • The adsorption behavior of $Pb^{2+}$ was compared between calcium alginate beads and capsules, which have different structures of alginate-gel core beads and liquid core alginate-membrane capsules, respectively. In terms of adsorption kinetics and isotherms, adsorption characteristics depending on pH and hardening time were compared for both adsorbents and also released calcium ion during the adsorption process was monitored. The adsorption of $Pb^{2+}$ on both adsorbents was caused by surface complexation and ion exchange mechanisms, both of which have similar effects on adsorption process regardless of the amount of adsorbed $Pb^{2+}$. The dependence of $Pb^{2+}$ adsorption upon pH was also similar for both adsorbents indicating the existence of similar functional groups on the surface of adsorbents. However, a different $Pb^{2+}$ adsorption behavior was observed considering the adsorption kinetics. The adsorption kinetic of $Pb^{2+}$ on alginate beads was slower than on alginate capsules and the maximum adsorption loading ($Q_{max}$) onto alginate beads was also less than onto alginate capsules by 49%. This drawback of alginate beads compared to capsules were ascribed to a diffusion limitation due to solid gel-core structure of alginate beads.

A Study on Properties of Pb-free Solder Joints Combined Sn-Bi-Ag with Sn-Ag-Cu by Conditions of Reflow Soldering Processes (리플로우 솔더링 공정 조건에 따른 Sn-Bi-Ag와 Sn-Ag-Cu 복합 무연 솔더 접합부 특성 연구)

  • Kim, Jahyeon;Cheon, Gyeongyeong;Kim, Dongjin;Park, Young-Bae;Ko, Yong-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.29 no.3
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    • pp.55-61
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    • 2022
  • In this study, properties of Pb-free solder joints which were combined using Sn-3.0Ag-0.5Cu (SAC305) Pb-free solder with a mid-temperature type of melting temperature and Sn-57Bi-1Ag Pb-free solder with a low-temperature type of melting temperature were reported. Combined Pb-free solder joints were formed by reflow soldering processes with ball grid array (BGA) packages which have SAC305 solder balls and flame retardant-4 (FR-4) printed circuit boards (PCBs) which printed Sn-57Bi-1Ag solder paste. The reflow soldering processes were performed with two types of temperature profiles and interfacial properties of combined Pb-free solder joints such as interfacial reactions, formations of intermetallic compounds (IMCs), diffusion mechanisms of Bi, and so on were analyzed with the reflow process conditions. In order to compare reliability characteristics of combined Pb-free solder joints, we also conducted thermal shock test and analyzed changes of mechanical properties for joints from a shear test during the thermal shock test.

Recovery of Nitric Acid from Waste Solder Stripper by Diffusion Dialysis (폐솔더 박리액으로부터 확산투석법에 의한 질산의 회수)

  • Ryu, Seong-Hyung;Kim, Tae-Young;Ahn, Nak-Kyoon;Gang, Myeong-Sik;Ahn, Jae-Woo;Ahn, Jong-Gwan
    • Resources Recycling
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    • v.24 no.5
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    • pp.33-39
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    • 2015
  • A basic study was conducted to effectively recover nitric acid from a waste solder stripper by diffusion dialysis using anion exchange membranes. The effects of flow rate, flux ratio, nitrate concentration, and metallic ion types and concentration on the recovery percentage of nitric acid were investigated. The recovery percentage of nitric acid was decreased with the increase of flow velocity. But the recovery percentage of nitric acid was increased as the increase of flux ratio(W/F) and showing a recovery percentage of nitric acid of about 99% at a flux ratio of 1.5 or more. As the increase of nitric acid concentration in feed solution, the recovery percentage of nitric acid was increased up to 3.0M, but in case of greater than 3.0M, the recovery percentage gradually was decreased. Leakage percentage of metallic ions through the membrane were in the order of Pb, Na and Cu but Fe and Sn did not leakaged. As a result of diffusion dialysis using real waste solder stripper at a flow rate of $0.9L/hr-m^2$, W/F = 1.3, a recovery percentage of nitric acid of approximately 94% was gained.

Effect of Reflow Variables on the Characteristic of BGA Soldering (리플로 공정변수가 BGA 솔더링 특성에 미치는 영향)

  • 한현주;박재용;정재필;강춘식
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.3
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    • pp.9-18
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    • 1999
  • In this study, Metallugical properties between Sn-3.5Ag, Sn-37Pb eutectic solders and Au/Ni/cu substrate according to time span above the melting point were investigated. A conventional reflow soldering machine wert used for this study and time span above the melting point was determined by changing peak soldering temperature and conveyor speed. As results, scallop type intermetallic compounds of $Ni_3Sn_4$ were formed at joint interface and no Cu-Sn compounds were found at all; Ni layer performed as a barrier for Cu diffusion. As the peak soldering temperature increased, thickness of the intermetallic compound layer increased; maximum thickness of the scallop-layer was 2.2$\mu\textrm{m}$. The shape of scallops were transformed from hemi-sphere type to elliptical shape with smaller size. Micro-hardness of the solder joint decreased as the eutectic structure of Sn-3.5Ag and Sn-37Pb increased.

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Fundamental study on PZT thin film capacitor(I) (PZT박막 Capacitor에 관한 기초연구(I))

  • Hwang, Yu-Sang;Baek, Su-Hyeon;Ha, Yong-Hae;Choe, Jin-Seok;Jo, Hyeon-Chun;Ma, Jae-Pyeong
    • Korean Journal of Materials Research
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    • v.3 no.1
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    • pp.19-27
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    • 1993
  • Abstract The PZT thin film was deposited by usin. RF magnetron sputtering with PZT(52/48) target. The formation of perovskite structure PZT thin film started at 55$0^{\circ}C$ on Si substrate. The AES results showed an oxide layer formed at the between Si and PZT film during the annealing. And, Ti$O_2$ layer appeared at the between TiN and PZT film for the annealing. But, the perovskite phase PZT film was formed after the annealing on the Si$O_2$/Si substarte. The ratio in PZT film was constant across the asdeposited PZT film, but, Pb have diffused into the Si substrate and Si have out-diffused into PZT layer during the post annealing at 75$0^{\circ}C$. The dielectric constants of PZT film indicated about 1300( thickness: 1500$\AA$, at 10KHz) but, the cracks were appeared to surface for annealing.

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Permeation Characteristics of Hazardous Substances in Tattoo Dye using Franz Diffusion Cells (Franz Diffusion Cell을 이용한 문신용 염료 내 유해물질의 피부 투과특성 연구)

  • Park, Kyo-Hyun;Jung, Se-Hoon;Shin, Ho-Sang;Kim, Bae-Hwan
    • Journal of Environmental Health Sciences
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    • v.42 no.1
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    • pp.61-70
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    • 2016
  • Objectives: The purpose of this study is to determine the exposure risk to tattoo components by analyzing skin absorption using the in vitro method. Tattoos are commonly used for cosmetic purposes, and the skin of not only the operator but of the people who are undergoing the cosmetic procedure is continuously exposed to hazardous chemicals. Methods: Skin permeation risk determination was conducted by the in vitro Franz diffusion cell method according to the ingredient types of tattoo dyes, such as volatile organic compounds (VOCs), non-volatile organic compounds and heavy metals, using hairless mouse full skin and human cadaver epidermis. Results: The major components with good skin penetration for each type of tattoo dye ingredient were clarified. Among the tatto dye ingredients, 1,2-Dichlorobenzene, Zn, Al, Pb and Ti showed good skin penetration. Most of the skin transmission rates were higher in hairless mouse full skin than in human cadaver epidermis. Conclusion: A possible exposure risk to hazardous substances in tattoo dyes was confirmed from this study. These results are expected to provide a positive contribution to the establishment of management regulations for tattoo dyes.

Electrical Properties in $Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ Structure and the Role of $SrTiO_3$ Film as a Buffer Layer ($Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ 구조의 전기적 특성 분석 및 $SrTiO_3$박막의 완충층 역할에 관한 연구)

  • 김형찬;신동석;최인훈
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.6
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    • pp.436-441
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    • 1998
  • $Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

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Detection of Volatile Organic Compounds (VOCs) using Organic-Inorganic Hybrid Perovskite Nanoparticles (유무기 페로브스카이트 나노입자의 휘발성 유기화합물 감응특성)

  • Choi, Hansol;Choi, Jihoon
    • Korean Journal of Materials Research
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    • v.30 no.10
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    • pp.515-521
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    • 2020
  • Organic-inorganic hybrid perovskite nanocrystals have attracted a lot of attention owing to their excellent optical properties such as high absorption coefficient, high diffusion length, and photoluminescence quantum yield in optoelectronic applications. Despite the many advantages of optoelectronic materials, understanding on how these materials interact with their environments is still lacking. In this study, the fluorescence properties of methylammonium lead bromide (CH3NH3PbBr3, MAPbBr3) nanoparticles are investigated for the detection of volatile organic compounds (VOCs) and aliphatic amines (monoethylamine, diethylamine, and trimethylamine). In particular, colloidal MAPbBr3 nanoparticles demonstrate a high selectivity in response to diethylamine, in which a significant photoluminescence (PL) quenching (~ 100 %) is observed at a concentration of 100 ppm. This selectivity to the aliphatic amines may originate from the relative size of the amine molecules that must be accommodated in the perovskite crystals structure with a narrow range of tolerance factor. Sensitive PL response of MAPbBr3 nanocrystals suggests a simple and effective strategy for colorimetric and fluorescence sensing of aliphatic amines in organic solution phase.

Numerical modeling of two-dimensional simulation of groundwater protection from lead using different sorbents in permeable barriers

  • Masood, Zehraa B.;Ali, Ziad Tark Abd
    • Environmental Engineering Research
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    • v.25 no.4
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    • pp.605-613
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    • 2020
  • This study is to investigate the possibility of using activated carbon prepared from Iraqi date-pits (ADP) which are produced from palm trees (Phoenix dactylifera L.) as low-cost reactive material in the permeable reactive barrier (PRB) for treating lead (Pb+2) from the contaminated groundwater, and then compare the results experimentally with other common reactive materials such as commercial activated carbon (CAC), zeolite pellets (ZP). Factors influencing sorption such as contact time, initial pH of the solution, sorbent dosage, agitation speed, and initial lead concentration has been studied. Two isotherm models were used for the description of sorption data (Langmuir and Freundlich). The maximum lead sorption capacities were measured for ADP, CAC, and ZP and were found to be 24.5, 12.125, and 4.45 mg/g, respectively. The kinetic data were analyzed using various kinetic models particularly pseudo-first-order, pseudo-second-order, and intraparticle diffusion. COMSOL Multiphysics 3.5a depend on finite element procedure was applied to formulate transmit of lead (Pb+2) in the two-dimensional numerical (2D) model under an equilibrium condition. The numerical solution shows that the contaminant plume is hindered by PRB.

Structural and Electrical Properties of PZT(10/90)/PZT(90/10) Heterolayered Thin Films (PZT(10/90)/PZT(90/10) 이종층 박막의 구조적, 전기적 특성)

  • Lee, Seong-Gap;Kim, Gyeong-Tae;Bae, Seon-Gi;Lee, Yeong-Hui
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.2
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    • pp.98-102
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    • 2000
  • Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO2/Si substrate using PZT(10/90) and PZT(90/10) m7etal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structures without presence of rosette structure. It can be assumed that the lower PZT layers played a role of nucleation site for the formation of the upper PZT layer. Pb-deficient PZT phase was formed at PZT/Pt interface due to the diffusion of Pb element into a Pt bottom electrode. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6%, respectively. Increasing the number of coatings, remanent polarization and coercive field were decreased and the values of the PZT-6 heterolayered film were $7.18\muC/cm^2$ and 68.5kV/cm, respectively. Leakage current densities were increased with increasing the number of coatings, and the value of the PZT-4 film was about $7\times10-8A/cm^2$ at 0.05MV/cm.

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