• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.52-58
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• 1986

$Pb(Zr_{0.525} Ti_{0.475})O_3$ piezoelectric ceramics both unmodified and doped with NiO were prepared by the conventional oxide techniques using sintering temperature from 900 to to 125$0^{\circ}C$. The difference in densification process between unmodified and NiO doped PZT ceramics was studied by shrinkage vs. firing temperatures and it was caused by increasing defect concentration in calcining process of NiO doped PZT ceramics. And nickel oxide solubility limit for $Pb(Zr_{0.525} Ti_{0.475})O_3$ ceramics is shown to be at the range from 0.2wt% to 0.5wt% from this defect model micro-structures dielectric and piezolectric properties of Nio doped PZT ceramics.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.67-67
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.106-106
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• 2005

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.174.2-174
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• 2002

• Journal of the Korean Ceramic Society
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• v.30 no.1
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• pp.1-6
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• 1993

Dielectric and piezoelectric porperties of pseudoternary xPb(Al2/3W1/3)O3-(1-x)Pb(Zr0.52Ti0.48)O3 (x=1~10mol%) ceramic system have been investigated as a function of the amount of PAW[Pb(Al2/3W1/3)O3] and sintered from 110$0^{\circ}C$ to 120$0^{\circ}C$ for 1hr. As the amount of PAW increases, the c/a of tetragonal structure decreases. The grain size was reduced with increasing the amount of PAW addition. However, the density, dielectric constant and electromechanical coupling factor(kp) exhibited a maximum value at the amount of 5mol% PAW addition.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.29.1-29.1
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• 2000

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.684-690
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• 2000

In order to study effects of interfacial layers between $Pb(Zr,Til)Q_3(PZT)$ films and electrodes for Metal-Ferroelectric-MetaI(MFM) structure capacitors, we have fabricated the capacitors with the Pt/PZT/interfacial-layer/Pt/$TiO_2/SiO_2$/Si structure. $PbTiO_3(PT)$ interfacial layers were formed by sol-gel deposition and PbO, ZrO, and $TiO_2$ thin layers were deposited by reactive sputtering. $TiO_2$ interface layers result in the finest grains of PZT(crystalline Temp. $600^{\circ}C$) films compare to $PbO_2\;and\;ZrO_2$ layers. However, as the thickness of $TiO_2$ layer increases. PZT thin films become rough and electrical characteristics were deteriorated due to remained anatase phase. On the other hand. PT interface layers result in improved morphology of PZT films and do not significantly change ferroelectric properties. It is a also observed that seed layers at the middle and top of PZT films do not give significant effects on grain size but the PT seed layer at the interface between the bottom electrode and the PZT films results in the small grain size.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.253-256
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• 1997

Epitaxially grown Pb(Zr, Ti)O$_3$thin films were prepared on LaAlO$_3$substrates by the dipping pyrolysis process using metal naphthenates as starting materials Homogeneous Pb-Zr-Ti solutions with toluene were spin-coated onto the substrates and pyrolyzed at 50$0^{\circ}C$ Highly oriented Pb(Zr, Ti)O$_3$films confirmed by X-ray diffraction $\theta$-2$\theta$ scans were obtained by heat-treated at 75$0^{\circ}C$ in air The X-ray pole-figure analysis and reciprocal-space mapping of the resulting 0.6$\mu\textrm{m}$ films showed that the thin films comprising the c-axis oriented tetragonal phase have an epitaxial relationship with the LaAlO$_3$substrates.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.153.1-153
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• 2000

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.378-380
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• 1987