• Title/Summary/Keyword: Pb(Zr, Ti)O$_3$ thin

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Crystallization and In-plane Alignment Behavior of Pb(Zr, Ti)$O_3$ Films

  • Hwang, Kyu-Seog;Kim, Byung-Hoon
    • The Korean Journal of Ceramics
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    • v.3 no.3
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    • pp.191-194
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    • 1997
  • Epitaxial Pb(Zr, Ti)O3(PZT) thin films were prepared on MgO(100) substrates by dipping-pyrolysis (DP) process using metal naphthenates as starting materials, and effects of pyrolysis and final heat-treatment conditions on the film's orientation were investigated. Solid-state epitaxial growth of PZT proceeds at lower temperature around 650℃ from the precursor pyrolyzed at 350 and 500℃. The in-plane alignment of the PZT films depends not only on the final heat-treatment temperature but on the pyrolysis conditions; the films, pyrolyzed at a higher temperature for a short time, i.e., at 500℃ for 10 min, exhibited stronger orientation after the same final heat treatment at 650°∼750℃. The PZT films with the strongest orientation were prepared by pyrolysis under the above conditions followed by final heat treatment at 750℃.

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Structural and Dielectric Properties of Pb[(Zr,Sn)Ti]NbO3 Thin Films Deposited by Radio Frequency Magnetron Sputtering

  • Choi, Woo-Chang
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.4
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    • pp.182-185
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    • 2010
  • $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3$ (PNZST) thin films were deposited by radio frequency magnetron sputtering on a $(La_{0.5}Sr_{0.5})CoO_3$ (LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with an excess PbO of 10 mole%. The thin films deposited at the substrate temperature of $500^{\circ}C$ crystallized to a perovskite phase after rapid thermal annealing (RTA). The thin films, which annealed at $650^{\circ}C$ for 10 seconds in air, exhibited good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the fabricated PNZST capacitor were approximately $20uC/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2\;{\times}\;10^9$ switching cycles was less than 10%.

Real Time Monitoring of Ionic Species Generated from Laser-Ablated Pb$(Zr_{0.52}Ti_{0.48})O_3$ Target Using Pulsed-Field Time-Of-Flight Mass spectrometer

  • 최영구;임훙선;정광우
    • Bulletin of the Korean Chemical Society
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    • v.19 no.8
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    • pp.830-835
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    • 1998
  • The characteristics of the ablation plume generated by 532 nm Nd: YAG laser irradiation of a Pb(Zr0.52Ti0.48)O3 (PZT) target have been investigated using a pulsed-field time-of-flight mass spectrometer (TOFMS). The relative abundance of O+, Ti+, Zr+, Pb+, TiO+, and ZrO+ ions has been measured and discussed. TiO+ and ZrO+ ions were also found to be particularly stable within the laser ablation plasma with respect to PbO+ species. The behavior of the temporal distributions of each ionic species was studied as a function of the delay time between the laser shot and the ion extraction pulse. The most probable velocity of each ablated ion is estimated to be Vmp=1.1-1.6x 105 cm/s at a laser fluence of 1.2 J/cm2, which is typically employed for the thin film deposition of PZT. The TOF distribution of Ti+ and Zr+ ions shows a trimodal distribution with one fast and two slow velocity components. The fast velocity component (6.8x 10' cm/s) appears to consist of directly ablated species via nonthermal process. The second component, originated from the thermal evaporation process, has a characteristic velocity of 1.4-1.6 x 105 cm/s. The slowest component (1.2 x 105 cm/s) is composed of a dissociation product formed from the corresponding oxide ion.