• Title/Summary/Keyword: Pb$(Zr_{0.52}Ti_{0.48})O_3$

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The Characteristic of PZT/BT Heterolayered films (PZT/BT 이종박막의 특성)

  • Lee, Sang-Heon;Nam, Sung-Pill;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.260-261
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    • 2005
  • The heterolayered thick/thin structure consisting of $Pb(Zr_{0.52}Ti_{0.48})O_3$ and $BaTiO_3(BT)$ were fabricated by a sol-gel process. PZT powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen printing techniques on alumina substrate with Pt electrodes. The microstructural and dielectric characteristics of the stacked heterolayered PZT/BT/PZT films were investigated by varying the number of coating $BaTiO_3$ layers. The existence of a $BaTiO_3$ layer between the PZT thick films of the tri-layer $Pb(Zr_xTi_{1-x})O_3/BaTiO_3/Pb(Zr_xTi_{1-x})O_3$thick/thin/thick film can greatly improve the leakage current properties of the PZT thick films. The average thickness of a PZT(5248)/$BaTiO_3$ heterolayered thick/thin film was 25$\mu$m. The relative dielectric constant and dielectric loss of the PZT(5248)/$BaTiO_3$-3 heterolayered thin film coated three times were 1087 and 1.00% at 1[MHz].

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The Dielectric Properties of PZT(52/48)/BST(60/40) Heterolayered Thin Film Prepared bv RF Sputtering Method (RF 스퍼터링법을 이용한 PZT(52/48)/BST(60/40) 이종층 박막의 유전 특성)

  • Kwon, Hyun-Yul;Kim, Ji-Heon;Choi, Eui-Sun;Lee, Sung-Gap;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1621-1623
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    • 2004
  • The $Pb(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4})TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using the RF sputtering method with RF powers of 60,70,80,90[W]. All thin films showed the peaks of the tetragonal phase. Increasing the RF power, dielectric constant and loss of the PZT(52/48)/BST(60/40)] heterolayered thin films were decreased. The thickness ratio of PZT and BST thin films was 1/1. The relative dielectric constant and the dielectric loss of the PZT(52/48)/ BST(60/40) heterolayered thin films were 562 and 13%, respectively.

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Studies on hydrothermal synthetic conditions for preparation of PZT powders (PZT 분말 제조를 위한 수열합성 조건에 관한 연구)

  • 정성택;이기정;서경원
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.2
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    • pp.254-262
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    • 1996
  • $Pb(Zr_{0.52}Ti_{0.48})O_{3}$ (PZT) ceramics were prepared with uniform particle size of $1~3\;\mu\textrm{m}$ by hydrothermal synthesis at various conditions, such as hydrothermal reaction temperature, concentration of mineralizer and reaction time. PZT ceramics were formed above $180^{\circ}C$ for 2 hrs reaction using 10 M KOH solution as a mineralizer, but reaction condition was slightly different by starting materials. Morphology and characterization of PZT powders were investigated by XRD and SEM. By increasing the reaction temperature, KOH concentration and reaction time, the composition of the PZT phase tended to be homogeneous phase.

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Structural and Ferroelectric Properties of PZT Thin Films Deposited on SrRuO3 Electrode Films (SrRuO3 전극 박막 위에 증착된 PZT 박막의 구조 및 강유전 특성)

  • Lee, Myung Bok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.10
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    • pp.620-624
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    • 2016
  • Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic $SrRuO_3$ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization ($P_r$) of $29.0{\mu}C/cm^2$ and coercive field ($E_c$) of 83 kV/cm, and $P_r$ decreased and $E_c$ increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.

Chemical Mechanical Polishing Characteristics of PZT Thin Films (PZT 박막의 화학.기계적 연마 특성)

  • Seo, Yong-Jin;Lee, Woo-Sun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.12
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    • pp.549-554
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    • 2006
  • In this paper we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity between electrode and ferroelectric film. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Removal rate, WIWNU% and surface roughness have been found to depend on slurry abrasive types and their hardness, especially, surface roughness and planarity were strongly depends on its pH value. A maximum in the removal rate is observed in the silica slurry, in contrast with the minimum removal rate occurs at ceria slurry. We found that the surface roughness of PZT films can be significantly reduced using the CMP technique.

The Piezoelectric and Dielectric Properties of PZT-PMFW Piezoelectric Ceramics (PZT-PMFW 압전 세라믹의 압전 및 유전 특성)

  • 이종섭;이문주;이용희;정수현;임기조
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.689-692
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    • 2001
  • In this paper, the pizoelectric and dielectric properties of 0.95Pb(ZrxTil-x)O$_3$- 0.05Pb(Mn$\_$0.2/Fe$\_$0.4/W$\_$0.4/)O$_3$piezoelectric ceramics is investigated as a function of Zr/Ti mole ratio. Also, MPB(Morphotropic Phase Boundary) and optimal sintering temperature is studied using XRD and SEM. As a results, when Zr/Ti mole ratio is 52/48, electromechanical coupling factor, k$\_$p/, is 58[%], permittivity, $\varepsilon$$\^$T/$\_$33//$\varepsilon$0, is 1360 and piezoelectric strain constant, d$\_$33/ is 265[pC/N] and the piezoelectric and dielectric properties become maximum. Phase transition temperature of its ternary piezoelectric system is about 350[$^{\circ}C$]. From the XRD analysis, when Zr/Ti mole ratio is 52/48, tetragonal phase transits to rhombohedral phase. Also, From measuring results of the sintering density, when sintering temperature is 1050[$^{\circ}C$], sintering density become maximum and is about 7930[kg/㎥], and average grain size is about 2-3[$\mu\textrm{m}$].

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Effects on Dielectric, Piezoelectric, and Aging Properties of Ions Substituted for Pb in PZT Ceramics (PZT 세라믹스에서 Pb 대신 치환된 이온이 유전 및 압전특성과 압전열화에 미치는 영향)

  • 문학범;정윤해
    • Korean Journal of Crystallography
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    • v.7 no.2
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    • pp.165-174
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    • 1996
  • The effects of Ba2+, Sr2+, and Ca2+-substitutions for Pb2+ at Pb(Zr0.52Ti0.48)O3 composition were studied for thier dielictric, piezoelectric, and aging properties. For relative dielectric constants and electromechanical coupling factors, the Ba2+-substituted composition was the highest and the Ca2+-substityed composition was the lowest. In the case of mechanical quality factors, the opposite behavior occurred. Time dependence of frequency for various ion-substituted compositions is similar to that of non-substituted composition. The piezoelectric properties after aging at high temperature was the worse than that after aging at room temperature.

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Dielectric and Piezoelectric Characteristics of Low Temperature Sintering 0.20Pb(Zn1/3Nb2/3)O3-0.80Pb(Zr0.48Ti0.52)O3 Ceramics with the Addition of Sintering Aid ZnO (소결조제 ZnO 첨가에 따른 저온소결 0.20Pb(Zn1/3Nb2/3)O3-0.80Pb(Zr0.48Ti0.52)O3 세라믹스의 유전 및 압전특성)

  • Yoo, Ju-Hyun;Lee, Yu-Hyong;Kim, Do-Hyung;Lee, Il-Ha;Kwon, Jun-Sik;Paik, Dong-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.2
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    • pp.126-130
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    • 2008
  • In this study, in order to develop low loss multilayer piezoelectric actuator, PZN-PZT ceramics were fabricated using $Li_2CO_3,\;Bi_2O_3$, CuO and ZnO as sintering aids, their structural, piezoelectric and dielectric characteristics were investigated according to the amount of ZnO addition, At the sintering temperature of $870^{\circ}C$, the density, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\epsilon}_r$) and piezoelectric constant($d_{33}$) of 0.4 wt% ZnO added specimen (sintered at $870^{\circ}C$) showed the optimum value of $7.812g/cm^3$, 0.535, 916, 1399, 335 pC/N respectively. Taking into consideration above piezoelectric properties of the specimen sintered at low temperature, it was concluded that PZN-PZT ceramics using 0.4 wt% ZnO as additive showed the optimum characteristics as the composition ceramics for low loss multilayer piezoelectric actuator application.

The Fabrication and Electrical Properties of PMS-PZT Ceramics using a Tape Casting Method (Tape Casting법에 의한 PMS-PZT계 세라믹스 제조 및 전기적 특성)

  • Jung, Hyun-Jae;Na, Eun-Sang;Choi, Sung-Churl
    • Journal of the Korean Ceramic Society
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    • v.38 no.9
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    • pp.860-865
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    • 2001
  • After manufacturing 2mol% CdO substitute $0.05Pb(Mn_{1/3}Sb_{2/3})O_3-0.95Pb(Zr_{0.52}Ti_{0.48})O_3$ piezoelectric ceramics powder as starting material, to manufacture green sheets using Doctor Blade method. The optimum composition of slurry was studied. Moreover, the sintering properties and the dielectric and piezoelectric properties with variation a thickness of the manufactured sheets were investigated. The optimum of slurry was investigated by the rheology with addition of additives, the sintering condition was decided by TGA. And the properties of sheet were investigated through SEM. XRD. The optimum of slurry was the stablest at dispersant 3.0 wt% to solid loading 30vol%. After, at addition of binder/plasticizer(0.75/0.25) 3.0wt%, viscosity was 7.55Pa${\cdot}$s. The dielectric and piezoelectric properties of the sheet were increased a little with the increasing of sintering temperature but were not variable with variation of sheet thickness.

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Piezoelectric Characteristics of Pb(Mnsub 1/3Nb 23)Osub 3-Pb(Zr, Ti)Osub 3 Ceramics with $CeO_2$ Impurity for the Piezoelectric Transformer (Cerium Oxide 첨가에 따른 압전트랜스포머용 $Pb(Mn_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3$ 세라믹의 압전특성)

  • Ryu, Ju-Hyeon;Seo, Seong-Jae
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.9
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    • pp.611-615
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    • 1999
  • Piezoelectric properties of PMN-PZT ceramics with $CeO_2$ impurity were investigated. Mechanical quality factor, $Q_m$ of 1792, 1285 and the electromechanical coupling coefficient, $k_p$ of 0.52, 0.54 were obtained from the specimen with 0.25 and 0.5 mole % $CeO_2$ respectively. Curie temperature was decreased with the addition of $CeO_2$ while the electric coercive field was proportional to the amount of impurity. Based on the system ceramics with 0.5 mole % cerium oxide, a Rosen type piezoelectric transformer was fabricated and tested. Voltage step-up ratios of 230 and 13 were obtained from the transformer at no load and $100 k\Omega$ resistance, respectively. Experimental results showed a potential of the transformer for the practical use coupled with the expected strength increase by the grain size refinement.

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