• Journal of the Korean Electrochemical Society
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• v.4 no.1
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• pp.6-9
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• 2001

[ $SiO_2$ ] effect on the electrochemical properties of polymeric gel electrolytes(PGEs) reinforced with glass fiber cloth(GFC) was investigated . PGEs were composed of polyacrylronitrile(PAN), poly(vinylidenefluoride-co-hexafluoropropylene) (P(VdF-co-HFP)), $LiClO_4$ and three kind of plasticizer(ethylene carbonate, dietyl carbonate, propylene carbonate). $SiO_2$ was added to PGEs in the weight fraction of 10, 20, $30\%$ respectively. PGEs containing $SiO_2$ showed conductivity of over $10^{-3}S/cm\;at\;23^{\circ}C$ and electrochemical stability window to 4.8V. In the impedance spectra of the cells, which were constructed by lithium metals as electrodes, interfacial resistance increased due to growth of passivation layer during storage time and remarkable difference was not observed with content of $SiO_2$. In the impedance spectra of the lithium ion polymer batteries consisted of $LiClO_2$ and mesophase pitch-based carbon fiber(MCF), ohmic cell resistance of $SiO_2-free$ PGE was changed continuously with number of cycle, but those of $SiO_2-dispersed$ PGEs were not. Discharge capacity of the PGE containing $20wt\%\;SiO_2$ showed 132 mAh/g at 0.2C rate and $85\%$ of discharge capacity was retained at 2C rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.454-454
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• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.486-493
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• 2003

Schottky type A $l_{0.33}$G $a_{0.67}$N ultraviolet photodetectors were fabricated on the MOCVD grown AlGaN/ $n^{＋}$-GaN and AlGaN/AlGaN interlayer/ $n^{＋}$-GaN structures. The grown layers have the carrier concentrations of -$10^{18}$, and the mobilities were 236 and 269 $\textrm{cm}^2$/V.s, respectively. After mesa etching by ICP etching system, the Si3N4 layer was deposited for passivation between the contacts and Ti/AL/Ni/Au and Pt were deposited for ohmic and Schottky contact, respectively. The fabricated Pt/A $l_{0.33}$G $a_{0.67}$N Schottky diode revealed a leakage current of 1 nA for samples with interlayer and 0.1$\mu\textrm{A}$ for samples without interlayer at a reverse bias of -5 V. In optical measurement, the Pt/A $l_{0.33}$G $a_{0.67}$N diode with interlayer showed a cut-off wavelength of 300 nm, a prominent responsivity of 0.15 A/W at 280 nm and a UV-visible extinction ratio of 1.5x$10^4./TEX>.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.452-452
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• 2010

차세대 디스플레이로서 주목 받고 있는 유연성 정보표시 소자 개발에 대한 요구도가 날로 증대되고 있다. 유연성 정보표시 소자로서 플라스틱 기반 유연성 소자가 특히 주목 받고 있으나, 이의 실용화를 위해서는 플라스틱 기판에 적용 가능한 보호막 형성 기술 개발이 선행되어야 한다. 플라스틱 필름의 경우 높은 산소 및 수분 투과율 때문에 유연성 디스플레이의 응용에 걸림돌이 되고 있다. 플라스틱 기반 유연성 소자의 장수명화를 위해서는 수분과 산소의 투과를 방지하는 passivation layer 형성 기술이 필수적으로 요구된다. 본 연구에서는, polyethylene terephethalate (PET) 기판상에 증착된 $SiO_x$ 보호막의 합성에 있어서 중간층 유무에 따른 투습특성의 변화를 살펴보았다. 기화된 HMDSO (Hexamethyldisiloxane)와 Ar 및 $O_2$ 혼합기체를 이용하여 PECVD 방법으로 $SiO_x$ 박막을 합성하였다. 15 nm 두께의 $Al_2O_3$를 중간층으로 사용하여 중간층 유무에 따른 초기성장 거동 변화가 $SiO_x$ 박막의 투습 특성에 미치는 영향을 조사하였다. $SiO_x$ 박막 구조와 화학적 조성은 각각 FE-SEM과 FT-IR을 이용하여 분석하였으며, AFM을 이용하여 $SiO_x$ 박막 표면 미세 형상을 관찰하였다. 투습률은 MOCON사(社)의 Permatran-W 3/33 MA을 이용하여 측정하였다. 그리고 반복 굽힘 시험기를 이용하여 $SiO_x$ 보호막의 동적 투습 특성을 조사하였다. $Al_2O_3$ 중간층 유무에 따라 $SiO_x$ 박막의 투습률 (WVTR; water vapor transmission rate)은 ${\sim}10^{-1}g/m^2/day$(300 nm-thick $SiO_x$/PET)에서 ${\sim}5{\times}10^{-3}g/m^2/day$(300 nm-thick $SiO_x$/15 nm-thick $Al_2O_3$/PET)으로 변화하였다. 300 nm-thick $SiO_x$/15 nm-thick $Al_2O_3$/PET 시편의 경우 곡지름 50 mm에서 1,000회 반복 굽힘 후에도 투습률 변화를 보이지 않았다. 이와 같은 $SiO_x$ 박막의 투습 특성 변화는 $Al_2O_3$ 중간층 유무에 따른 초기 성장 거동의 변화로 해석된다. FE-SEM 및 AFM 표면 미세 구조 관찰을 통한 초기 성장 거동 변화 조사 결과, $Al_2O_3$ 중간층 없이 PET 기판위에 $SiO_x$ 박막 증착한 경우 3 차원 성장을 하는 반면, PET기판위에 $Al_2O_3$ 중간층 형성 후 $SiO_x$ 박막 증착하는 경우 2 차원 성장을 하게 됨을 관찰하였다. 따라서 본 연구를 통하여, 플라스틱 기반 유연성 표시 소자에 적용하기 위한 $SiO_x$ 보호막 합성 에 있어서 초기 성장 거동의 변화가 투습 특성에 민감한 영향을 미침을 알 수 있었다.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.29-37
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• 2021

The effect of Ar/N₂ two-step plasma treatment on the quantitative interfacial adhesion energy of low temperature Cu-Cu bonding interface were systematically investigated. X-ray photoelectron spectroscopy analysis showed that Ar/N₂ 2-step plasma treatment has less copper oxide due to the formation of an effective Cu4N passivation layer. Quantitative measurements of interfacial adhesion energy of Cu-Cu bonding interface with Ar/N₂ 2-step plasma treatment were performed using a double cantilever beam (DCB) and 4-point bending (4-PB) test, where the measured values were 1.63±0.24 J/m² and 2.33±0.67 J/m², respectively. This can be explained by the increased interfacial adhesion energy according phase angle due to the effect of the higher interface roughness of 4-PB test than that of DCB test.