• Nuclear Engineering and Technology
• /
• 제54권11호
• /
• pp.4062-4071
• /
• 2022

Long-term aluminum (Al) corrosion tests were designed to investigate the condition that would generate severe Al corrosion and precipitation. Buffer agents of sodium tetraborate (NaTB), trisodium phosphate (TSP) and sodium hydroxide (NaOH) were adopted. The insulation materials, fiberglass and calcium silicate (Ca-sil), were examined to explore their effects on Al corrosion. The results show that significant precipitates were formed in both NaTB/TSP-buffered solutions at high pH. The precipitates formed in NaTB solution raise more concerns on chemical effects in GSI-191. A passivation layer formed on the surfaces of coupon in solution with the presence of insulations could effectively mitigate Al corrosion. The Fe-enriched intermetallic particles (IPs) embedded in coupon appeared to serve as seeds to readily induce precipitation via providing extra area for heterogeneous Al hydroxide precipitation. X-ray spectroscopy (EDS) and X-ray diffraction (XRD) analyses indicate that the precipitates are mainly boehmite (γ-AlOOH) and no direct evidence confirms the presence of sodium aluminum silicate or calcium phosphate.

• 마이크로전자및패키징학회지
• /
• 제23권1호
• /
• pp.11-15
• /
• 2016

유기발광다이오드(orgianic light emitting diodes, OLEDs)는 대형 유연 디스플레이와 발광원으로서 사물인터넷 (IoT)의 하드웨어 기기 등 다양한 분야에서 연구가 진행되고 있다. 그러나 낮은 일함수의 금속 및 쉽게 반응하는 유기재료 자체의 특성으로 인하여 외부환경에 매우 취약한 단점을 가지고 있으며 특히, 수분과 산소에 민감하여 외부와의 접촉 시 성능이 급속도로 저하되는 현상을 나타내게 된다. 이를 방지하기 위해 PVD, CVD, ALD 와 같은 방법으로 보호막 형성 연구를 진행 중에 있지만 복잡한 공정 및 높은 비용의 문제점 등이 있다. 그러므로 외부 환경에 의한 성능 저하를 차단해주는 저렴하고 단순한 공정의 페시베이션(passivation) 박막 기술 개발이 매우 중요하다. 본 연구에서는 유기발광다이오드의 수명 향상을 위하여 스핀코팅(spin-coating) 방법으로 녹색 유기발광다이오드 소자 위에 조성비에 따른 페시베이션 박막을 형성한 후 녹색 유기발광다이오드의 휘도특성 변화를 조사하였다. 페시베이션 용액은 poly vinyl alcohol (PVA)를 기반으로 sodium alginate (SA)를 0, 10, 20, 40 wt%의 조성비로 제조하였으며, 40 wt%의 조성비에서 가장 좋은 배리어 보호 특성을 나타내었다. 최종적으로 PVA + SA 용액의 최적화된 페시베이션 보호막을 제작할 수 있었다.

• Journal of Information Display
• /
• 제11권1호
• /
• pp.8-11
• /
• 2010

In this study, a new thin films passivation technique using Zn with high electronegativity and $MgF_2$, a fluorine material with better optical transmittance than the sealing film materials that have thus far been reported was proposed. Targets with various ratios of $MgF_2$ to Zn (5:5, 4:6 and 3:7) were fabricated to control the amount of Zn in the passivation films. The Mg-Zn-F films were deposited onto the substrates and Zn was located in the gap between the lattices of $MgF_2$ without chemical metathesis in the Mg-Zn-F films. The thickness and optical transmittance of the deposited passivation films were approximately 200 nm and 80%, respectively. It was confirmed via electron dispersive spectroscopy (EDS) analysis that the Zn content of the film that was sputtered using a 4:6 ratio target was 9.84 wt%. The Zn contents of the films made from the 5:5 and 3:7 ratio targets were 2.07 and 5.01 wt%, respectively. The water vapor transmission rate (WVTR) was determined to be $38^{\circ}C$, RH 90-100%. The WVTR of the Mg-Zn-F film that was deposited with a 4:6 ratio target nearly reached the limit of the equipment, $1\times10^{-3}\;gm^2{\cdot}day$. As the Zn portion increased, the packing density also increased, and it was found that the passivation films effectively prevented the permeation by either oxygen or water vapor. To measure the characteristics of gas barrier, the film was applied to the emitting device to evaluate their lifetime. The lifetime of the applied device with passivation was increased to 25 times that of the PLED device, which was non-passivated.

• Transactions on Electrical and Electronic Materials
• /
• 제14권4호
• /
• pp.203-207
• /
• 2013

P-type Si wafers were dipped in HF solution. The minority carrier lifetime (lifetime) increased after HF treatment due to the hydrogen termination effect. To investigate the film passivation effect, PECVD was used to deposit $SiN_x$ on both HF-treated and untreated wafers. $SiN_x$ generally helped to improve the lifetime. A thermal process at $850^{\circ}C$ reduced the lifetime of all wafers because of the dehydrogenation at high temperature. However, the HF-treated wafers showed better lifetime than untreated wafers. PERCs both passivated and not passivated by HF treatment were fabricated on the rear side, and their characteristics were measured. The short-circuit current density and the open-circuit voltage were improved due to the effectively increased lifetime by HF treatment.

• E2M - 전기 전자와 첨단 소재
• /
• 제10권6호
• /
• pp.555-561
• /
• 1997

The passivation of n-GaAs(100) surface has investigated by photoreflectance(PR). The surface of the sample was treated with the 0.001 N solution Se/NH$_4$OH. After the surface treatment, the samples were annealed between 400 to $700^{\circ}C$ in a $N_2$atmosphere for 10 min. The intensity of PR signal and period of Franz-Deldysh oscillation(FKO) gradually decreased as the annealing temperature increased. The surface electric field(E$_{s}$) of the sample annealed at $600^{\circ}C$ is obtained 1.34$\times$10$^{5}$ V/cm. This value is 1.97 times less than that of unannealed sample. It has found that the passivation of surface occurred when the surface of the sample had been treated with Se/NH$_4$OH solution and annealed from 500 to $600^{\circ}C$. This result could be due to activation of elemental Se on the surface. It has also found that the elemental Se of the surface diffused about 100 $\AA$ into the bulk GaAs when Se-treated sample was annealed at $600^{\circ}C$.>.

• 센서학회지
• /
• 제32권6호
• /
• pp.352-356
• /
• 2023

The integration of bioelectronic devices with the skin is a promising strategy for personalized healthcare monitoring and diagnostics. On-skin bioelectrodes hold great potential for the real-time tracking of physiological parameters. However, persistent challenges of stability and reliability have instigated exploration beyond conventional noble metals. This study focuses on the ionic passivation and oxidation dynamics of copper-based on-skin thin-film bioelectrodes. Through parylene chemical vapor deposition, we harness a controlled thin film of parylene insulation to counter the intrinsic susceptibility of copper to oxidation in the ionic environment. The results represent the relationship among the parylene insulation thickness, copper oxidation, and electrode impedance over temporal intervals. Comparative analyses indicate that the short-term stability of the copper electrode is comparable to that of the gold electrode. Therefore, we propose a cost-effective strategy for fabricating copper-based on-skin bioelectrodes by introducing enhanced ionic stability within a discernible operational timeframe. This study enriches our understanding of on-skin bioelectronics and affordable material choices for practical use in wearable healthcare devices.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.456-459
• /
• 2004

Analog film/screen systems have been being changed to a digital x-ray imaging device using direct conversion materials. Photocoductors for a direct detection flat-panel imager require high x-ray absorption, ionization and charge collection, low leakage current and large area deposition. In this work, $HgI_2$ films with excellent properties for x-ray detector were deposited by screen printing method. The thickness of $HgI_2$ film was about $150\;{\mu}m$. The passivation layer is fabricated using a-Se and parlyene, the both fabrication $HgI_2$ film were compared for analyzing the leakage current reduction. We measured electrical properties-leakage current, photosensitivity, SNR though I-V measurement, As the result, $HgI_2$ film using a-Se passivation layer had the greater

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
• /
• pp.45-48
• /
• 2003

The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on tungsten passivation layer in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we investigated the effects of oxidizer on W-CMP process with three different kinds of oxidizers, such as $H_2O_2$, $Fe(NO_3)_3$, and $KIO_3$. In order to compare the removal rate and non-uniformity of three oxidizers, we used alumina-based slurry of pH 4. According to the CMP tests, three oxidizers showed different removal mechanism on tungsten surface. Also, the microstructures of surface layer by AFM image were greatly influenced by the slurry chemical, composition of oxidizers. The difference in removal rate and roughness of tungsten surface are believed to caused by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry. Our stabilized slurries can be used a guideline and promising method for improved W-CMP process.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
• /
• pp.78-80
• /
• 2006

The hybrid thin-film (HTF) passivation layer composed of the Ultra Violet (UV) curable acrylate layer and MS-31 (MgO:$SiO_2$=3:1wt%) layer was adopted in organic light emitting device (OLEO) to protect organic light emitting materials from penetrations of oxygen and water vapors. The results showed that the HTF layer possessed a very low WVTR value of lower than $0.007gm/m^{2+}day$ at $37.8^{\circ}C$ and 100% RH. This value was within the limited range of the sensitivity of WVTR measurements. And the lifetime of the HTF passivated device became almost three times longer than that of the bare device. The HTF on the OLEO was found to be very effective in protect what from the penetrations of oxygen and moisture.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.276-279
• /
• 2004

Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.