• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.413-413
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• 2012

Lead sulfide (PbS) Colloidal quantum dots (CQDs) are promising material for the photovoltaic device due to its various outstanding properties such as tunable band-gap, solution processability, and infrared absorption. More importantly, PbS CQDs have large exciton Bohr radius of 20 nm due to the uniquely large dielectric constants that result in the strong quantum confinement. To exploit desirable properties in photovoltaic device, it is essential to fabricate a device exhibiting stable performance. Unfortunately, the performance of PbS NQDs based Schottky solar cell is considerably degraded according to the exposure in the air. The air-exposed degradation originates on the oxidation of interface between PbS NQDS layer and metal electrode. Therefore, it is necessary to enhance the stability of Schottky junction device by inserting a passivation layer. We investigate the effect of insertion of passivation layer on the performance of Schottky junction solar cells using PbS NQDs with band-gap of 1.3 eV. Schottky solar cell is the simple photovoltaic device with junction between semiconducting layer and metal electrode which a significant built-in-potential is established due to the workfunction difference between two materials. Although the device without passivation layer significantly degraded in several hours, considerable enhancement of stability can be obtained by inserting the very thin LiF layer (<1 nm) as a passivation layer. In this study, LiF layer is inserted between PbS NQDs layer and metal as an interface passivation layer. From the results, we can conclude that employment of very thin LiF layer is effective to enhance the stability of Schottky junction solar cells. We believe that this passivation layer is applicable not only to the PbS NQDs based solar cell, but also the various NQDs materials in order to enhance the stability of the device.

• E2M - 전기 전자와 첨단 소재
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• 제10권5호
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• pp.473-480
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• 1997

Surface passivation using glass powders results in good reliability for high voltage silicon power devices. In this paper Zinc borosilicate glass and Lead borosilicate glass were prepared for the purpose of passivating, and a deposition technique of glass films on the silicon surface by electrophoresis in which acetone is used as a suspension medium has been investigated. Their physical properties were compared using DTA, SEM, XRD, as a function of firing temperature, I can get the fine films of 22${\mu}{\textrm}{m}$ thickness with Lead borosilicate glass under 300 volts applied, 3 minutes and $700^{\circ}C$ firing temperature. Also I can get the fine films of 17${\mu}{\textrm}{m}$ thickness with Zinc borosilicate glass under same conditions. As a result of investigation of glass films from which glass layer was removed by placing it in HCl, it has been found that pre-firing and annealing play an important role to achieve uniform and fine glass deposition films. And also it was found that relative dielectric constant is independence of frequency.

• Transactions on Electrical and Electronic Materials
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• 제10권3호
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• pp.75-79
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• 2009

An intrinsic silicon thin film passivation layer is deposited by the microwave remote-plasma enhanced chemical vapor deposition at temperature of $175^{\circ}C$ and various gas ratios for solar cell applications. The good quality amorphous silicon films were formed at silane $(SiH_4)$ gas flow rates above 15 seem. The highest effective carrier lifetime was obtained at the $SiH_4$, flow rate of 20 seem and the value was about 3 times higher compared with the bulk lifetime of 5.6 ${\mu}s$ at a fixed injection level of ${\Delta}n\;=\;5{\times}10^{14}\;cm^{-3}$. An annealing treatment was performed and the carrier life times were increased approximately 5 times compared with the bulk lifetime. The optimal annealing temperature and time were obtained at 250 $^{\circ}C$ and 60 sec respectively. This indicates that the combination of the deposition of an amorphous thin film at a low temperature and the annealing treatment contributes to the excellent surface and bulk passivation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.53-54
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• 2008

We have studied electro-optic characteristics as a function of passivation thickness$(t_p)$ in the fringe-field swiching (FFS) mode using the LC with positive dielectric anisotropy. When $t_p$ is increased from $0.29{\mu}m$ to $3.0{\mu}m$, a maximum transmittance is slightly increased to $2{\mu}m$. However, operating voltage is continuously increased up to above 11v. We found that the tilt angle is decreased between the edge of pixel electrode and the center of each pixel electrode. In the FFS mode using the liquid crystal with positive dielectric anisotropy, transmittance is affected by the tilt angle. When tilt angle is increased, transmittance become decrease. Therefore, in the FFS device, a low tilt angle is favored for high transmittance. It is demonstrated that the suitable passivation thickness make a tilt angle decreased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.142-145
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• 2004

In this work, we have investigated the application of rapid thermal processing (RTP) and plasma enhanced chemical vapour deposition (PECVD) for surface passivation. Rapid thermal oxidation (RTO) has sufficiently low surface recombination velocities (SRV) $S_{eff}$ in spite of a thin oxides and short process time. The effective lifetime is increasing with an increase of the oxide thickness. In the same oxide thickness, The effective lifetime is independent on the process temperature and time. $S_{eff,max}$ is exponentially decreased with increasing oxide thickness. $S_{eff,max}$ can be reduced to 200 cm/s with only 10 nm oxide thickness. On the other hand, three different types of SiN are reviewed. SiN1 layer has a thickness of about 72 nm and a refractive index of 2.8. Also, The SiN1 has a high passivation quality. The effective lifetime and SRV of 1 $\Omega$ cm Float zone (FZ) silicon deposited with SiN1 is about 800 s and under 10 cm/s, respectively. The SiN2 is optimized for the use as an antireflection layer since a refractive index of 2.3. The SiN3 is almost amorphous silicon caused by less contents of N2 from total process. The effective lifetime on the FZ 1 ${\Omega}cm$ is over 1000 ${\mu}s$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.126-129
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point, the passivation potential (PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.301-306
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point, the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.245-245
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• 2010

This paper and the rear passivation experiment was local back surface field Nd:$YVO_4$ green laser and the experiment was used performed to screen printing. Laser power 100%, with a fixed frequency for 60kHz Current of 29A and 30A were tested in two conditions. The point contact distances of 0.2mm, 0.4mm, 0.6mm, 0.8mm and 29A and 30A current conditions, it was found that is suitable for 0.4mm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.164-164
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• 2008

금속배선공정에서 높은 전도율과 재료의 값이 싸다는 이유로 최근 Cu를 사용하였으나, 디바이스의 구조적 특성을 유지하기 위해 높은 압력으로 인한 새로운 다공성 막(low-k)의 파괴와, 디싱과 에로젼 현상으로 인한 문제점이 발생하게 되었다. 이러한 문제점을 해결하고자, 본 논문에서는 Cu 표면에 Passivation layer를 형성 및 제거하는 개념으로 공정시 연마제를 사용하지 않으며, 낮은 압력조건에서 공정을 수행하기 위해, 전해질의 농도 변화에 따른 Liner sweep voltammetry 법을 사용하여 전압활성화에 의한 전기화학적 반응이 Cu전극에 어떤 영향을 미치는지 연구하였으며, 표면 조성을 알아보기 위하여 Energy Dispersive Spectroscopy (EDS) 분석을 하였고, Cu disk의 결정성과 배향성 관찰을 위해 X-Ray diffraction (XRD)로 금속 표면을 비교하여 실험 결과로 얻어진 데이터를 통하여 ECMP 공정에 적합한 전해액 선정과 농도를 선택하였다.

• 한국전기전자재료학회논문지
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• 제11권7호
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• pp.517-521
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• 1998

After etching Al-Cu alloy films using $SiCl_4/Cl_2/He/CHF_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS(X-ray pheotoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, $CHF_3$ plasma treatment subsequent to the etch has been carried put. A passivation layer is formed by fluorine-related compounds on the etched Al-Cu surface after $CHF_3$ treatment, and the layer suppresses effectively the corrosion on the surface as the $CHF_3$treatment in the pressure of 300m Torr.