• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.11
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• pp.97-104
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• 1996

Because of the novel characteristics such as chemical stability, hardness, electrical resistivity and thermal conductance, diamond-like carbon (DLC) film is a suitable materials for the passivation layers. For this purpose, DLC films are synthesized under various conditions and are characterized. Adhesive stregth is excellent and increased with the increase of the hydrogen gas flow rate. The resistivity of approximately 5.3X10$^{8}{\Omega}{\cdot}cm$ is measured by automatic spreading resistance probe analysis method. The thermal conductivity of DLC films is superior to that of PSG oxide and improved by increasing the hydrogen gas flow rate. The patterning techniques of the DLC films is developed using the lift-off and RIE methods to form 5${\mu}$m line. Finally, power transistor with the DLC film as passivation layer is fabricated and analyzed. The test result shows the improsved long-term stability and higher breakdown voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.269-270
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• 2005

A hybrid passivation method using parylene and silicon dioxide combination layer for a flexible organic light emitting diode (FOLED) was applied on a polycarbonate substrate. A parylene coating by vapor polymerization method is a highly effective passivation process for the FOLED, and it applies all top surface and the edges of the FOLED device. In order to minimize the permeation of moisture and oxygen from the top surface of the device, an additional layer of silicon dioxide was deposited over the parylene coated layer. It was found that the water vapor transmittance rate (WVTR) of parylene (15 m-in-thickness) / SiO2 (0.3$\mu$m-in-thickness) combination layers deposited on polycarbonate film was decreased under the value of 10-3 g/m2day. The FOLED with the hybrid passivation showed remarkably longer lifetime characteristics in the ambient conditions than the non-passivated FOLED. The lifetime of the passivated FOLED was 400 hours and it was more than ten times over the lifetime of the convectional non-passivated FOLED.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.296-296
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• 2012

LCD panel 검사를 위한 Probe unit은 대형 TV 및 모바일용 스마트폰을 중심으로 각광을 받고 있는 소모성 부품으로 최근 pitch의 미세패턴화가 급속히 진행되고 있다. 본 연구에서는 Slit Wafer 제작 공정을 최적화하기 위해 25 um pitch의 마스크를 설계, 제작하였다. 단공과 장공을 staggered 형태로 배열하여 25 um/25 um line/space pitch로 설계하였다. 또한 단위실험을 위해 직접 25 um pitch로 설계하여, 동일한 실험조건을 적용하여 최적 조건을 찾고자 하였다. 반응변수는 Etch rate 및 profile angle로 결정하였으며, 약 200~400 um 에칭된 slit의 상단과 하단의 폭, 그리고 식각깊이를 SEM 측정사진을 통해 정한 후 etch rate 및 profile angle을 결정하였다. 인자는 식각속도 및 wall의 각도를 결정하는 식각 및 passivation 가스의 유량, chamber 압력(etching/passivation), 식각시간 등으로 정하였으며, 이들의 최대값과 최소값 2 수준으로 실험계획을 설계하였다. 식각 조건에 따라 8회의 실험을 수행하였다. 가스의 유량은 SF6 400 sccm, C4F8 400 sccm, 식각 싸이클 시간은 5.2~10.4 sec, passivation 싸이클시간 4 sec로 하였으며, 압력은 식각시 7.5 Pa, passivation 시 10 Pa로 할 경우가 가장 sharp하게 나타났다. Coil power 와 platen power는 각각 2.6 KW, 0.14 KW로 하였으며, 최적화를 위한 인자의 값들은 이 범위에서 조절하였다. 이러한 인자의 조건 조절을 통해 etch rate는 5.6 um/min~6.4 um/min, $88.9{\sim}89.1^{\circ}$의 profile angle을 얻을 수 있었다.

• Journal of the Korean institute of surface engineering
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• v.36 no.3
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• pp.251-255
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• 2003

With increasing environmental demands in surface treatment of steel sheets, the passivation layers containing hexavalent chromium $(Cr^{+6})$ are being replaced by non-chromium or trivalent chromium compounds. After review on the various types of inorganic compounds, the zirconates was chosen as the candidate for alternative to sodium dichromate in the aspect of its barrier properties with excellent adhesion to organics. The ammonium zirconium carbonate (AZC) and sodium hexafluorozirconate (SFZ) could be reach $70-80\%$ level of CDC (cathodic dichromate) treatment by their single applications. But high porosity in the AZC layer and poor electrical conductivity of SFZ solution limit the single application of zirconate. Mixed composition of zirconates to compensate their inferiorities or incorporation of organic compounds to seal the porosity seems to be inevitable to match up the target level of Cr-free passivation of tinplate.

• Korean Journal of Materials Research
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• v.30 no.8
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• pp.393-398
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• 2020

We propose a novel stripping solution containing acids (HCl and HNO₃), an oxidant [(NH₄)₂S₂O₈], and complexing agents (NaCl and citric acid) to remove surface passivation layers from 14K gold alloys fabricated using an investment casting process. The optimized solution employing only HCl acid is determined by varying molar fractions of HCl and HNO₃ on 14K yellow gold samples. Stripping properties are also identified for red and white gold alloy samples under the optimized stripping conditions. The removal of passivation layers, weight loss, and microstructure evolution are characterized using Raman spectroscopy, a precision scale, and optical microscopy. The proposed stripping solution effectively removes passivation layers more rapidly than conventional cyanide stripping. Weight loss increases linearly for up to 5 min for all 14K gold alloys. Red gold exhibits the greatest weight loss, followed by yellow gold and white gold. The results of microstructural analysis reveal that the conformal stripping occurs according to time. These results imply that the proposed oxidative chloride stripping might replace conventional cyanide stripping.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.794-797
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• 2009

We manufactured a novel gas permeation thin film passivation by using inorganic Mg-Zn-F target which has better optical characteristics and high electronegativity. We fabricated targets in various composition ratio and formed about 200nm which is limited thickness of the flexible display. Applied to PLED device, the target which composed of $MgF_2$ and Zn at the ratio of 4:6, WVTR was reached the measurement limit of the equipment, $10^{-3}g/m^2{\cdot}day$ and the life time was increased 25 times better than PLED device which is non-passivation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.812-815
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• 2003

In this study, the MgO thin-film passivation layer was adopted to protect passive matrix organic light emitting diode(PMOLED) with the cathode separator from moisture and oxygen. Using the substrate rotate and tilt technique during the deposition, the organic and cathode layers were perfectly covered with MgO. And then, we analyzed the difference of the current-voltage and luminescence characteristics between passivated OLED of the MgO and non-passivated OLED. It was found that the number of dark spot generated from the degradated pixel was decreased owing to the Mgo thin-film passivation layer using the tilt ＆ rotate technique. And the half-life time passivated OLED was improved two times more. Thus, the MgO could be vaccum-deposited under the low temperature and had a merit that the organic layer was not much affected. We can consider that MgO thin film passivation method can be adopted to protect the OLED from moisture and oxygen and can offer the enhancement of lifetime.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.432-438
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• 2004

In this study, we investigated the WVTRs Properties of inorganic thin composite films(ITCFs) to be newly adopted as the passivation layer of the OLED to replace the inorganic compound material Because we thought that inorganic compound materials were limited to enhance the barrier property of thin film. So, ITCFs were fabricated by mixing the cooperated material with the base material. And then, ITCFs were deposited onto the plastic substrate using the electron beam evaporation system and the water vapor transmission rates(WVTRs) were measured using the Mocon equipment. As a result of the WVTR measurement, we could analyze the WVTR values for various ITCFs. ITCFs had a remarkably lower value than the inorganic compound film. Through the analysis of thin film, we can understand the crystal structure and mixed amount. Therefore, ITCFs can be used as the inorganic passivation layers of OLED with the inorganic compound film.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.75-79
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• 2009

An intrinsic silicon thin film passivation layer is deposited by the microwave remote-plasma enhanced chemical vapor deposition at temperature of $175^{\circ}C$ and various gas ratios for solar cell applications. The good quality amorphous silicon films were formed at silane $(SiH_4)$ gas flow rates above 15 seem. The highest effective carrier lifetime was obtained at the $SiH_4$, flow rate of 20 seem and the value was about 3 times higher compared with the bulk lifetime of 5.6 ${\mu}s$ at a fixed injection level of ${\Delta}n\;=\;5{\times}10^{14}\;cm^{-3}$. An annealing treatment was performed and the carrier life times were increased approximately 5 times compared with the bulk lifetime. The optimal annealing temperature and time were obtained at 250 $^{\circ}C$ and 60 sec respectively. This indicates that the combination of the deposition of an amorphous thin film at a low temperature and the annealing treatment contributes to the excellent surface and bulk passivation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.468-472
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• 1997

The effect of the surface state on the quantum efficiency of underlying GaAs/AlGaAs multi-quantum well(MQW) structures consisting of three GaAs quantum wells with different thickness, is studied by low temperature photoluminescence(PL). The structure was grown by molecular beam epitaxy(MBE) on (100) GaAs substrate. The thickness of three GaAs quantum wells was 3, 6 and 9 nm, respectively. The MQWs were placed apart from 50 nm AlGaAs edge-barriers including two inner-barriers with 15 nm in thickness. The samples used in this study were prepared with different growth temperatures. Particularly, the hydrogen passivation effect to the 9 nm quantum well located at near surface appeared much stronger than any others. Transition energy and optical gain related to the hydrogen passivation effects on the multi-quantum well structure was calculated by transfer matrix method.