• Title/Summary/Keyword: Partial shade of solar module

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DC Link Switch Loss Analyses according to Circuit Structures of the Boost Converter for Photovoltaic Generation System (태양광 발전 시스템을 위한 부스트 컨버터의 회로 구성에 따른 직류측 스위치 손실 분석)

  • Lee, Seung-Yo
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.61 no.4
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    • pp.192-198
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    • 2012
  • Switch losses directly affect the efficiency of power conversion systems and those have big differences according to the power consumed by load systems and the structures of power conversion circuits. In this paper, analyses for switch losses in DC link converter are performed based on the circuit structures of the DC/DC converter in photovoltaic generation system whose output power is varied according to the amount of solar radiation, temperature and partial shade on the solar modules. Boost converter is adopted as a DC link converter topology of the photovoltaic generation system and the loss analyses for the switches used in the boost converters are performed according to the circuit structures. Analyses like the things performed in this paper will be a prerequisite to designing the photovoltaic generation system whose output power is changed according to the environmental variations.

A Study on Module-based Power Compensation Technology for Minimizing Solar Power Loss due to Shaded Area (음영지역 발생으로 인한 태양광 발전손실 최소화를 위한 모듈부착형 전력보상기술에 관한 연구)

  • Kim, Young-Baig;Song, Beob-Seong
    • The Journal of the Korea institute of electronic communication sciences
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    • v.13 no.3
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    • pp.539-546
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    • 2018
  • Recently, as the solar power generation market is rapidly increasing, interest is focused on research for minimizing the output of the solar cell module. The role of the power optimizer is important when inconsistencies occur in photovoltaic power generation. In the conventional system, centralized inverter method and microinverter method are mainly used. In this paper, we analyze the problem of power generation efficiency loss due to the incompatibility of existing system configuration methods. We also proposed a module - type power compensation method that can improve the mismatch caused by shading. The proposed module - based power optimizer is implemented and compared with the existing operation method. From the simulation result, it was confirmed that the efficiency of the proposed operation method is improved compared to the existing method.

Analysis of Mechanism for Photovoltaic Properties and Bypass Diode of Crystalline Silicon and CuInxGa(1-x)Se2 Module in Partial Shading Effect (결정질 실리콘 및 CuInxGa(1-x)Se2 모듈의 부분음영에 따른 태양전지 특성 변화 및 바이패스 다이오드의 작동 메커니즘 분석)

  • Lee, Ji Eun;Bae, Soohyun;Oh, Wonwook;Kang, Yoonmook;Kim, Donghwan;Lee, Hae-Seok
    • Korean Journal of Materials Research
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    • v.25 no.4
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    • pp.196-201
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    • 2015
  • This paper presents the impact of partial shading on $CuIn_xGa_{(1-x)}Se_2(CIGS)$ photovoltaic(PV) modules with bypass diodes. When the CIGS PV modules were partially shaded, the modules were under conditions of partial reverse bias. We investigated the characterization of the bypass diode and solar cell properties of the CIGS PV modules when these was partially shaded, comparing the results with those for a crystalline silicon module. In crystalline silicon modules, the bypass diode was operated at a partial shade modules of 1.67 % shading. This protected the crystalline silicon module from hot spot damage. In CIGS thin film modules, on the other hand, the bypass diode was not operated before 20 % shading. This caused damage because of hotspots, which occurred as wormlike defects in the CIGS thin film module. Moreover, the bypass diode adapted to the CIGS thin film module was operated fully at 60% shading, while the CIGS thin film module was not operated under these conditions. It is known that the bypass diode adapted to the CIGS thin film module operated more slowly than that of the crystalline silicon module; this bypass diode also failed to protect the module from damage. This was because of the reverse saturation current of the CIGS thin film, $1.99{\times}10^{-5}A/cm^2$, which was higher than that of crystalline silicon, $8.11{\times}10^{-7}A/cm^2$.