• Journal of the Korean Chemical Society
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• v.29 no.6
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• pp.608-614
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• 1985

Electrical conductivities of $ZrO_2-Sm_2O_3$ systems containing 10, 20, 30, 40, and 50 mol% of $ZrO_2$ have been measured as a function of temperature and of oxygen partial pressure at temperature from 500 to 1000${\circ}C$ and oxygen partial pressures from 1 ${\times}10^{-5}to 1{\times}10^{-1}$ atm. Plots of log conductivity vs. 1/T are found to be linear with an inflection point at around 650$^{\circ}C$ and the temperature dependence of conductivity shows two different defect structures. The conductivities are increased with increasing pressure, slowing a p-type character. The electrical conductivity dependences on $Po_2$ are found to be ${\sigma}{\propto}Po_2^{1/5.3}$ at 650∼1000$^{\circ}C$ and ${\sigma}{\propto}Po_2^{1/6}$ at 500∼650$^{\circ}C$, respectively, The defect structures are Oi" at 650-1000$^{\circ}C$ and $Vs_m$"' at 500-650$^{\circ}C$. The electron hole is main carrier type, however ionic contribution is found at low temperature portion. Ionic contributions increased with the increasing amount of $ZrO_2$ dopant. In 60mol% $ZrO_2-Sm_2O_3$ system, the conductivity is increased with decreasing oxygen pressure.

• Journal of the Korean Ceramic Society
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• v.24 no.2
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• pp.123-132
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• 1987

Yttria-stabilized zirconia with erbia-lanthana were investigated with respect to the amount of Ln2O3 (Ln; Er, La) addition in the range of 0.5∼5 mol% to the base composition of 8 mol% yttriazirconia. Following analysis and measurement were adopted for the characterization of synthesizes of solid electrolyte; phase transformation, lattice parameter, crystallite size, relative density, chemical composition and SEM/EDS. Electrical conductivity by two-probe method versus temperature from 350$^{\circ}C$ to 800$^{\circ}C$ and frequency in the range of 5Hz∼13MHz by complex impedance method was also conducted together with the determination of oxygen ion transference number by EMF method for the evaluation of their electrical properties. The results were as followsing; Electrical conductivity were decreased with increase in Ln2O3 content, but their activation energies increased. In the case of La2O3 addition, espicially, its electrical conductivity was decreased owing to the segregation of second phases at the grain-boundary. Grain-boundary conductivity of the specimen contained 0.5 mol% Er2O3 exhibited a maximum conductivity among thecompositions experimented. However, their bulk conductivities decreased in both case. Oxygen ion transference number was also reduced with decrease in oxygen partial pressure. For example, in the case of Er2O3 addition it retained value in the range of 0.97∼0.94 abvove 4.74${\times}$10-2in oxygen partial pressure. With the increase in the quantities of the evaporation of additive components, the crystallite size of stabilized zirconia decreased, and their relative density also reduced owing to the formation of porosity in their matrices. In the case of La2O3 the sinterbility was improved in the limited amount of addition up to 0.5 mol%, in the same range of addition the strength of sintered bodies were improved perhaps owing to the precipitation of metastable tetragonal phase in the fully stabilized zirconia.

• Journal of the Korean Chemical Society
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• v.37 no.4
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• pp.390-395
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• 1993

The x values and electrical conductivities of the nonstoichiometric compounds$ CeO_{2-x} have been measured in a temperature range from 600 to 1200$^{\circ}C$ under oxygen partial pressure of $2{\times}10^{-1}{\sim}1{\times}10^{-4}$ atm. The enthalpy of the defect formation shows an endothermic process with the oxygen partial pressure dependence (1/n value) of -1/3.18 ∼ -1/3.69. The activation energy and 1/n value for the electrical conductivity are estimated as 1.75 eV and -1/4, respectively. According to the x values, the $\sigma$ values, and the thermodynamic data, the defect structure of the ceria seems to be the formation of singly charged negative oxygen vacancies. The n-type semiconducting behaviors could be explained by the presence of excess metals in the lattice as the conduction electron donor.

• Korean Journal of Materials Research
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• v.2 no.3
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• pp.207-212
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• 1992

The defect structure of calcium titanates with CaO excess or $TiO_2$ excess was studied by measuring electrical conductivities as a funcition of oxygen partial pressure at $85O^{\circ}C$ to $1050^{\circ}C$. Execess CaO may divide itself equally between A and B sites, resulting in $Ca_{Ti}$" and Vo", while excess $TiO_2$ form $V_{Ca}$" and Vo". The equilibrium electrical conductivity data indicate that the solubilities of CaO and $TiO_2$ in $CaTiO_3$ are 5000ppm and 2000ppm, respectively. Oxygen vacancies contributed to the ionic conduction which flatten the conductivity minima and did not make any defect association with oppositely charged defects.ely charged defects.

• The Journal of Natural Sciences
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• v.13 no.1
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• pp.51-63
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• 2003

The investigation of the electrical conductivities donor doped $BaTiO_3$at isothermal temperature 700K and 1200K as a function of the oxygen partial press between I and $10^{-20}$atm yields evidence concerning the kind of defects. The position of the minimum conductivity is moved in some orders of magnitude with increasing of donor contents when comparing that of the pure $BaTiO_3$. The conductivity for all the samples with various concentration of donor blends into a same value and the conduction properties become independent of donor contents at very oxygen pratial pressure. This indicates that the reduction has become the major source of defects.

• Bulletin of the Korean Chemical Society
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• v.8 no.5
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• pp.389-393
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• 1987

The oxidation of carbon monoxide by gaseous oxygen on 0.53, 1.02, and 1.51 mol $\%$CoO-doped $-Fe_2O_3$ catalysts has been investigated in the temperature range from 340 to 480$^{\circ}C$ under various CO and $O_2$ partial pressures. The oxidation rates have been correlated with 1.5-order kinetics; the 0.5-order with respect to $O_2$ and the first-order with respect to CO. In the above temperature range, the activation energy is 0.34 $\pm$ 0.01 eV${\cdot}$$mol^{-1}$. The electrical conductivity of 0.53, 1.02, and 1.51 mol %CoO-doped $\alpha$-$Fe_2O_3$ has been measured at 350$^{\circ}C$ under various $P_{CO}and $P_{O_2}$. From the conductivity data it was found that $O_2$ was adsorbed on Vo formed by doping with CoO, while CO appeared essentially to be chemisorbed on the lattice oxygen of the catalyst surface. The proposed oxidation mechanism and the dominant defect were supported by the agreement between the kinetic data and conductivities.

• Journal of the Korean Chemical Society
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• v.35 no.6
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• pp.625-629
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• 1991

The electrical conductivity of the Niobium Oxide-Lead Oxide systems containing 2.5, 5.0, 7.5, and 10.0 mol% of Lead Oxide has been measured in a temperature range 700${\sim}$$1100^{\circ}C$ under oxygen partial pressure of 2.0 ${\times}$ $10^{-1}$${\sim}$1.0 ${\times}$ $10^{-5}$ atm. The electrical conductivities of the system decreased with increasing PbO mol% and varied from $10^{-5}$ to $10^{-1}$ $ohm^{-1}$ $cm^{-1}$. The activation energy for conductivity was about 1.70 eV. The oxygen pressure dependence of electrical conductivity revealed that the system was a mixed conductor between ionic and electronic conductivities at high oxygen pressures and a n-type electronic conductivity with oxygen pressure dependence of -1/4 order at low oxygen pressures. The defect structure and electrical conduction mechanism of the system have been discussed with the data obtained.

• Journal of the Korean Chemical Society
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• v.31 no.5
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• pp.406-412
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• 1987

The electrical conductivities of ${\alpha}-Fe_2O_3$ containing 2.5 and 5.0mol% of cadmium were measured from 300 to $900^{\circ}C$ under oxygen pressures of 10$^{-7}$ to 10$^{-1}$ atmosphere. Plots of log ${\sigma}$ vs. 10$^3$/T show the extrinsic conductivity at oxygen pressure higher than $5{\times}10$^{-2}$atm. The transition points appear at about 550$^{\circ}$C and the activation energies are 1.34 eV for the intrinsic region and 0.50 eV for the extrinsic region on 5mol% Cd-doped ${\alpha}-Fe_2O_3$. The extrinsic conductivity disappears at oxygen partial pressures lower than $5{\times}10$^{-2}$ atm, and the intrinsic conductivity predominates. The electrical conductivities decrease with increasing mol% of cadmium doped. The predominant defect of ${\alpha}-Fe_2O_3$ doped with Cd is believed to be Fe${2+}$ interstitial for the intrinsic, however, oxygen vacancy predominates for the extrinsic region. The electrical conduction mechanisms are proposed and the conduction band model is suggested for the extrinsic region.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.80.1-80.1
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• 2010

A strontium titanate ($SrTiO_3$)-based material with a perovskite structure is considered to be one of the promising alternatives to $LaCrO_3$-based materials since $SrTiO_3$ perovskite shows a high chemical stability under both oxidizing and reducing atmospheres at high temperatures. $SrTiO_3$ materials exhibit an n-type semiconducting behavior when it is donor-doped and/or exposed to a reducing atmosphere. In this work, $Sr_{1-x}La_xTi_{1-y}M_yO_3$ materials doped with $La^{3+}$ in A-sites and aliovalent transition metal ions ($M^{n+}$) in B-sites were synthesized by the modified Pechini method. The X-ray diffraction analysis indicated that the materials synthesized by the Pechini process exhibited a single curbic perovskite-type structure without any impurity phases, and are tolerant, to some extent, to cation doping. The sintering behaviors of $Sr_{1-x}La_xTi_{1-y}M_yO_3$ in $H_2/N_2$ and air were characterized by dilatometry and microstructural observations. The electrical conduction mechanism and the dopant effect are discussed based on the defect structures and the electrical conductivities measured at various oxygen partial pressures and temperatures.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.30.1-30.1
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• 2011

Silicon is one of useful materials in various industry such as semiconductor, solar cell, and secondary battery. The metallic silicon produces generally melting process for ingot type or chemical vapor deposition (CVD) for thin film type. However, these methods have disadvantages of high cost, complicated process, and consumption of much energy. Electrodeposition has been known as a powerful synthesis method for obtaining metallic species by relatively simple operation with current and voltage control. Unfortunately, the electrodeposition of the silicon is impossible in aqueous electrolyte solution due to its low oxidation-reduction equilibrium potential. Ionic liquids are simply defined as ionic melts with a melting point below $100^{\circ}C$. Characteristics of the ionic liquids are high ionic conductivities, low vapour pressures, chemical stability, and wide electrochemical windows. The ionic liquids enable the electrochemically active elements, such as silicon, titanium, and aluminum, to be reduced to their metallic states without vigorous hydrogen gas evolution. In this study, the electrodeposion of silicon has been investigated in ionic liquid of 1-butyl-3-methylpyrolidinium bis (trifluoromethylsulfonyl) imide ([bmpy]$Tf_2N$) saturated with $SiCl_4$ at room temperature. Also, the effect of electrode materials on the electrodeposition and morphological characteristics of the silicon electrodeposited were analyzed The silicon electrodeposited on gold substrate was composed of the metallic Si with single crystalline size between 100~200nm. The silicon content by XPS analysis was detected in 31.3 wt% and the others were oxygen, gold, and carbon. The oxygen was detected much in edge area of th electrode due to $SiO_2$ from a partial oxidation of the metallic Si.