• Title/Summary/Keyword: Parallel circuit

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Electrical Characteristics of PV Modules with Odd Strings by Arrangement on Bypass Diode (홀수스트링 PV모듈의 바이패스 다이오드 배치에 의한 전기적 특성)

  • Shin, Woo-Gyun;Go, Seok-Hwan;Ju, Young-Chul;Song, Hyung-Jun;Kang, Gi-Hwan
    • Journal of the Korean Solar Energy Society
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    • v.37 no.4
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    • pp.1-11
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    • 2017
  • Most PV modules are fabricated by 6 cell-strings with solar cells connected in series. Moreover, bypass diodes are generally installed every 2 cell-strings to prevent PV modules from a damage induced by current mismatch or partial shading. But, in the case of special purpose PV module, like as BIPV (Building Integrated Photovoltaic), the number of cell-strings per module varies according to its size. Differ from a module employing even cell-strings, the configuration of bypass diode should be optimized in the PV module with odd strings because of oppositely facing electrodes. Hence, in this study, electrical characteristics of special purposed PV module with odd string was empirically and theoretically studied depending on arrangement of bypass diode. Here, we assumed that PV module has 3 strings and the number of bypass diodes in the system varies from 2 to 6. In case of 2 bypass diodes, shading on a center string increases short circuit current of the module, because of a parallel circuit induced by 2 bypass diodes connected to center string. Also, the loss is larger, as the shading area in the center string is enlarged. Thus, maximum power of the PV module with 2 bypass diode decreases by up to 59 (%) when shading area varies from 50 to 90 (%). On the other hand, In case of 3 and 6 bypass diodes, the maximum power reduction was within about 3 (W), even the shading area changes from 50 to 90 (%). As a result, It is an alternative to arrange the bypass diode by each string or one bypass diode in the PV module in order to completely bypass current in case of shading, when PV module with odd string are fabricated.

Design of a CAM-Type Traffic Policing Controller with minimum additional delay (시간지연을 최소화한 CAM형 트래픽 폴리싱 장치 설계)

  • 정윤찬;홍영진
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.25 no.4B
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    • pp.604-612
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    • 2000
  • In order to satisfy the desired QoS level associated with each existing connection, ATM networks require traffic policing during a connection. Users who respect the contract should receive the function of transparent traffic policing without any interruption. However, contract violations should be detected and mediated immediately. So we propose a CAM type policing controller to allow user cell streams to minimize additional delay. The proposed policing scheme controls policing actions including traffic shaping by suitably spacing cells on each virtual circuit. This policing action is based on parallel processing of multiple cell stream which arrive in ATM multiplexed virtual circuits. We have developed an analytical model of the proposed policing scheme to examine the amount of cell loss and delay, which depends on traffic load, the size of policing buffers and minimum spacing cell time.

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A Low Power GaAs MMIC Multi-Function Chip for an X-Band Active Phased Array Radar System (X-대역 능동 위상 배열 레이더시스템용 저전력 GaAs MMIC 다기능 칩)

  • Jeong, Jin-Cheol;Shin, Dong-Hwan;Ju, In-Kwon;Yom, In-Bok
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.5
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    • pp.504-514
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    • 2014
  • An MMIC multi-function chip with a low DC power consumption for an X-band active phased array radar system has been designed and fabricated using a 0.5 ${\mu}m$ GaAs p-HEMT commercial process. The multi-function chip provides several functions: 6-bit phase shifting, 6-bit attenuation, transmit/receive switching, and signal amplification. The fabricated multi-function chip with a compact size of $16mm^2(4mm{\times}4mm)$ exhibits a gain of 10 dB and a P1dB of 14 dBm from 7 GHz to 11 GHz with a DC low power consumption of only 0.6 W. The RMS(Root Mean Square) errors for the 64 states of the 6-bit phase shift and attenuation were measured to $3^{\circ}$ and 0.6 dB, respectively over the frequency.

A Design of K-Band Low Phase noise Oscillator by Direct Coupling of K-band Dielectric Resonator (유전체 공진기의 직접결합에 의한 K-Band 저위상잡음 발진기 설계)

  • Lim, Eun-Jae;Han, Geon-Hee;Rhee, Young-Chul
    • The Journal of the Korea institute of electronic communication sciences
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    • v.9 no.1
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    • pp.17-24
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    • 2014
  • In this paper, we analysed coupling coefficient between dielectric resonator of high dielectric constant and microstrip line to design for low phase noise dielectric resonator by direct coupling. Also we analysed phase noise of dielectric resonance oscillator with parallel feedback circuit to complement Q by high dielectric constant. We obtained a result from high-stability dielectric oscillator which is optimum designed through analysis of dielectric resonance oscillator phase noise and coupling coefficient. The result is that the phase noise was -83.3dBc/Hz@1KHz at 20.25GHz when we used about 3.6 coupling coefficient and ${\epsilon}_r$=30 dielectric resonator of 20.25GHz dielectric resonance oscillator. As a result, we suggested the direct-connect design method by frequency multiplication mode to prevent phase noise loss at K-Band.

Design of a PWM-Controlled Driving Device for Backlightsof LED Systems (LED 광원의 백 라이트에 대한 PWM 제어 및 구동 장치 설계)

  • Um, Kee-Hong
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.15 no.1
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    • pp.245-251
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    • 2015
  • In this paper, we present a design of PWM-controlled driving device for backlights in LED systems. The system can control either the brightness of the entire screen of backlights of LCD driven by LED or illumination or contrast of each partial segment of the entire screen. The PWM-controlled driving device includes the shift register that shifts the series data according to the clock signal prior to the generation of parallel data. It is also is comprised of a number of registers, a number of counters, a number of comparators, and a number of synchronizing gates (producing the PWM-controlled signals). The proposed device for backlights in LED systems can generate the PWM-controlled signal with a high degree of resolution without the increase of clock frequency. It also contains the PWM-controlled circuit that disperses and restrains the quantized noise.

Development of Bioelectric Impedance Measurement System Using Multi-Frequency Applying Method

  • Kim, J.H.;Jang, W.Y.;Kim, S.S.;Son, J.M.;Park, G.C.;Kim, Y.J.;Jeon, G.R.
    • Journal of Sensor Science and Technology
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    • v.23 no.6
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    • pp.368-376
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    • 2014
  • In order to measure the segmental impedance of the body, a bioelectrical impedance measurement system (BIMS) using multi-frequency applying method and two-electrode method was implemented in this study. The BIMS was composed of constant current source, automatic gain control, and multi-frequency generation units. Three experiments were performed using the BIMS and a commercial impedance analyzer (CIA). First, in order to evaluate the performance of the BIMS, four RC circuits connected with a resistor and capacitor in serial and/or parallel were composed. Bioelectrical impedance (BI) was measured by applying multi-frequencies -5, 10, 50, 100, 150, 200, 300, 400, and 500 KHz - to each circuit. BI values measured by the BIMS were in good agreement with those obtained by the CIA for four RC circuits. Second, after measuring BI at each frequency by applying multi-frequency to the left and right forearm and the popliteal region of the body, BI values measured by the BIMS were compared to those acquired by the CIA. Third, when the distance between electrodes was changed to 1, 3, 5, 7, 9, 11, 13, and 15 cm, BI by the BIMS was also compared to BI from the CIA. In addition, BI of extracellular fluid (ECF) was measured at each frequency ranging from 10 to 500 KHz. BI of intracellular fluid (ICF) was calculated by subtracting BI of ECF measured at 500 kHZ from BI measured at seven frequencies ranging from 50 to 500 KHz. BI of ICF and ECF decreased as the frequency increased. BI of ICF sharply decreased at frequencies above 300 KHz.

A Magnetic Energy Recovery Switch Based Terminal Voltage Regulator for the Three-Phase Self-Excited Induction Generators in Renewable Energy Systems

  • Wei, Yewen;Kang, Longyun;Huang, Zhizhen;Li, Zhen;Cheng, Miao miao
    • Journal of Power Electronics
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    • v.15 no.5
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    • pp.1305-1317
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    • 2015
  • Distributed generation systems (DGSs) have been getting more and more attention in terms of renewable energy use and new generation technologies in the past decades. The self-excited induction generator (SEIG) occupies an important role in the area of energy conversion due to its low cost, robustness and simple control. Unlike synchronous generators, the SEIG has to absorb capacitive reactive power from the outer device aiming to stabilize the terminal voltage at load changes. This paper presents a novel static VAR compensator (SVC) called a magnetic energy recovery switch (MERS) to serve as a voltage controller in SEIG powered DGSs. In addition, many small scale SEIGs, instead of a single large one, are applied and devoted to promote the generation efficiency. To begin with, an expandable mathematic model based on a d-q equivalent circuit is created for parallel SEIGs. The control method of the MERS is further improved with the objective of broadening its operating range and restraining current harmonics by parameter optimization. A hybrid control strategy is developed by taking both of the stand-alone and grid-connected modes into consideration. Then simulation and experiments are carried out in the case of single and double SEIG(s) generation. Finally, the measurement results verify that the proposed DGS with SVC-MERS achieves a better stability and higher feasibility. The major advantages of the mentioned variable reactive power supplier, when compared to the STATCOM, include the adoption of a small DC capacitor, line frequency switching, simple control and less loss.

A Neural Metwork's FPGA Realization using Gate Level Structure (게이트레벨 연산구조를 사용한 신경합의 FPGA구현)

  • Lee, Yun-Koo;Jeong, Hong
    • Journal of Korea Multimedia Society
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    • v.4 no.3
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    • pp.257-269
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    • 2001
  • Because of increasing number of integrated circuit, there is many tries of making chip of neural network and some chip is exit. but this is not prefer because YLSI technology can't support so large hardware. So imitation of whole system of neural network is more prefer. There is common procedure in signal processing as in the neural network and pattern recognition. That is multiplication of large amount of signal and reading LUT. This is identical with some operation of MLP, and need iterative and large amount of calculation, so if we make this part with hardware, overall system's velocity will be improved. So in this paper, we design neutral network, not neuron which can be used to many other fields. We realize this part by following separated bits addition method, and it can be appled in the real time parallel process processing.

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Development of Asynchronous Blocking Algorithm through Asynchronous Case Study of Steam Turbine Generator (스팀터빈 발전기 비동기 투입 사례연구를 통한 비동기 방지 알고리즘 개발)

  • Lee, Jong-Hweon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.10
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    • pp.1542-1547
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    • 2012
  • Asynchronous phenomenon occurs on the synchronous generators under power system when a generator's amplitude of electromagnetic force, phase angle, frequency and waveform etc become different from those of other synchronous generators which can follow instantly varying speed of turbine. Because the amplitude of electromagnetic force, phase frequency and waveform differ from those of other generators with which are to be put into parallel operation due to the change of excitation condition for load sharing and the sharing load change, if reactive current in the internal circuit circulates among generators, the efficiency varies and the stator winding of generators are overheated by resistance loss. When calculation method of protection settings and logic for protection of generator asynchronization will be recommended, a distance relay scheme is commonly used for backup protection. This scheme, called a step distance protection, is comprised of 3 steps for graded zones having different operating time. As for the conventional step distance protection scheme, zone 2 can exceed the ordinary coverage excessively in case of a transformer protection relay especially. In this case, there can be overlapped protection area from a backup protection relay and, therefore, malfunctions can occur when any fault occurs in the overlapped protection area. Distance relays and overcurrent relays are used for backup protection generally, and both relays have normally this problem, the maloperation, caused by a fault in the overlapped protection area. Corresponding to an IEEE standard, this problem can be solved with the modification of the operating time. On the other hand, in Korea, zones are modified to cope with this problem in some specific conditions. These two methods may not be obvious to handle this problem correctly because these methods, modifying the common rules, can cause another coordination problem. To overcome asynchronizing protection, this paper describes an improved backup protection coordination scheme using a new logic that will be suggested.

A study on the capacitance-voltage characteristics of the CdZnS/CdTe heterojunction (CdZnS/CdTe 이종접합의 커패시턴스-전압 특성에 관한 연구)

  • Lee, Jae-Hyeong
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.6
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    • pp.1349-1354
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    • 2011
  • In this work, we fabricated the CdZnS/CdTe heterojunction and investigated the C-V characteristics to determine the depletion width and the charge density distribution. A parallel experiment on CdS/CdTe heterojunction was also carried out for comparison. The depletion region width, for CdZnS/CdTe heterojunction, was nearly constant, regardless of bias voltage. However, the depletion region was wider than that of CdS/CdTe heterojunction due to high resistivity of CdZnS film. The interface charge density of CdZnS/CdTe heterojunction was increased linearly with the bias voltage and showed lower values than those for CdS/CdTe junction. The open circuit voltage of CdZnS/CdTe heterojunction solar cells increased with zinc mole ratio due to reducing of the electron affinity difference between CdZnS and CdTe films. However, the increase of series resistance due to the high resistivity of Cd1-xZnxS films results in reducing conversion efficiency.