• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.9
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• pp.4165-4170
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• 2012

In this paper, a method for the improvement in the gain and bandwidth of a microstrip-fed broadband planar quasi-Yagi antenna (QYA) is studied. The broadband characteristics of the QYA are achieved from the coplanar strip-fed planar dipole driver and a parasitic director close to the driver. In order to obtain stable gain variation over the required frequency band, a director and a ground reflector are appended to the driver having a nearby parasitic director. The QYA is fed through an integrated balun composed of a microstrip line and a slot line which are terminated in a short circuit. By adjusting the feeding point, a broadband impedance matching is obtained. A QYA with an operating frequency band of 1.75-2.7 GHz and a gain > 4.5 dBi is designed and fabricated on an FR4 substrate with dielectric constant of 4.4 and thickness of 1.6mm. The experimental results show that the fabricated antenna has good performance such as a broad bandwidth of 59.7%(1.55-2.87 GHz), a stable gain between 4.7-6.5 dBi, and a front-to-back ratio > 10 dB. The measured data agree well with the simulation, which validates this study.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.10
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• pp.881-887
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• 2014

Micro-sized Peltier coolers are generally employed for uniformly distributing heat generated in the multi-chip packages. These coolers are commonly classified into vertical and planar devices, depending on the heat flow direction and the arrangement of thermoelectric materials on the used substrate. Owing to the strong need for evaluation of performance of thermoelectric modules, at present an establishment of proper theoretical model has been highly required. The design theory for micro-sized thermoelectric cooler should be considered with contact resistance. Cooling performance of these modules was significantly affected by their contact resistance such as electrical and thermal junction. In this paper, we introduce the useful and optimal design model of small dimension thermoelectric module.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.410-410
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• 2013

Next-generation nonvolatile memory (NVM) has attracted increasing attention about emerging NVMs such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory and resistance random access memory (RRAM). Previous studies have demonstrated that RRAM is promising because of its excellent properties, including simple structure, high speed and high density integration. Many research groups have reported a lot of metal oxides as resistive materials like TiO2, NiO, SrTiO3 and ZnO [1]. Among them, the ZnO-based film is one of the most promising materials for RRAM because of its good switching characteristics, reliability and high transparency [2]. However, in many studies about ZnO-based RRAMs, there was a problem to get lower current level for reducing the operating power dissipation and improving the device reliability such an endurance and an retention time of memory devices. Thus in this paper, we investigated that highly reproducible bipolar resistive switching characteristics of W doped ZnO RRAM device and it showed low resistive switching current level and large ON/OFF ratio. This may be caused by the interdiffusion of the W atoms in the ZnO film, whch serves as dopants, and leakage current would rise resulting in the lowering of current level [3]. In this work, a ZnO film and W doped ZnO film were fabricated on a Si substrate using RF magnetron sputtering from ZnO and W targets at room temperature with Ar gas ambient, and compared their current levels. Compared with the conventional ZnO-based RRAM, the W doped ZnO ReRAM device shows the reduction of reset current from ~$10^{-6}$ A to ~$10^{-9}$ A and large ON/OFF ratio of ~$10^3$ along with self-rectifying characteristic as shown in Fig. 1. In addition, we observed good endurance of $10^3$ times and retention time of $10^4$ s in the W doped ZnO ReRAM device. With this advantageous characteristics, W doped ZnO thin film device is a promising candidates for CMOS compatible and high-density RRAM devices.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.7
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• pp.3140-3145
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• 2012

In this paper, a design method for a compact slot antenna fed by a coplanar waveguide (CPW) is studied. A T-shaped tuning stub is inserted inside a narrow rectangular slot and the slot is impedance matched to the CPW feedline by adjusting the width, length, and position of the stub. The resonance frequency is adjustable by the slot length and the antenna size can be reduced by bending the slot. The resonance frequency and impedance matching property of the compact slot antenna are similar to those of the half-wavelength slot antenna, which enables one to design compact antenna of this type with ease. A compact slot antenna for 2.45-GHz ISM band is designed, fabricated on an FR4 substrate (dielectric constant of 4.4 and thickness of 0.8 mm), and experimentally tested. The measured results agree well with the simulations, which confirms the validity of this study. The fabricated compact slot antenna shows an impedance bandwidth of 200 MHz(2.32-2.52 GHz) for a VSWR < 2, which is suitable for 2.45-GHz ISM band (2.4-2.48 GHz). The measured radiation patterns show ${\infty}$-shaped directional pattern in the E-plane and nearly omni-directional pattern in the H-plane with a peak gain of 2.0 dBi, which are similar to those of a monopole antenna. The proposed antenna is expected to be suitable for the applications as antennas for WLAN, RFID, and mobile handset.

• Journal of Korean Society of Environmental Engineers
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• v.31 no.5
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• pp.341-345
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• 2009

Continuous dry anaerobic digestion of organic solid wastes (30% TS, Total Solids) comprised of food waste and paper was performed under mesophilic condition. During the operation, hydraulic retention time (HRT) was decreased as follows: 150 d, 100 d, 60 d, and 40 d, which corresponded to the solid loading rate of 2.0, 3.0, 5.0, and 7.5 kg TS/$m^3$/d, respectively. Volumetric biogas production rate ($m^3$/$m^3$/d) increased as HRT decreased, and the highest biogas production rate of 3.49${\pm}$0.31 $m^3$/$m^3$/d was achieved at 40 d of HRT. At this HRT, high volatile solids (VS) reduction of 76% was maintained, and methane production yield of 0.25 $m^3$/kg $TS_{added}$ was achieved, indicating 67.4% conversion of organic solid waste to bioenergy. The highest biogas production yield of 0.52 $m^3$/kg $TS_{added}$ was achieved at 100 d of HRT, but it did not change much with respect to HRT. For the ease feed pumping, some amount of digester sludge was recycled and mixed with fresh feed to decrease the solid content. Recirculation volume of 5Q was found to be the optimal in this experimental condition. Specific methanogenic activity (SMA) of microorganisms at mesophilic-dry condition was 2.66, 1.94, and 1.20 mL $CH_4$/g VS/d using acetate, butyrate, and propionate as a substrate, respectively.

• Journal of Navigation and Port Research
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• v.31 no.6
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• pp.503-507
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• 2007

In this paper, the ultra-widebend, microstrip patch antenna with the bandwidth of 3 GHz was implemented for ultra-wideband(UWB) wireless communication applications. In order to cover the very wide bandwidth of 3 GHz, a multi-resonance antenna was designed, each resonance frequency was separated into five frequency bend, 7.5, 8.1, 8.7, 9.3, and 9.9GHz with the interval of 600MHz BW. And for wideband characteristics of each antenna, U-slot antennas were designed at each center frequency. Designed five U-slot antennas were connected in series for multi-resonance of 3GHz BW and wideband matching was also designed for impedance matching transmission line calculated. The relative dielectric constant, the height, the loss tangent of the PCB substrate were ${\epsilon}_r=4.8,\;h=0.6$ and loss tangent=0.0009 respectively. The implemented antenna's radiation patterns and gain were directivity characteristics and $1.46{\sim}4.08dBi$ at the five separated center frequency.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.95-98
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• 2007

In this paper, the magnetic properties and the annealing behavior of spin valve structures with Mo(MoN) underlayers were studied for various underlayer thickness. The spin valve structure was Si substrate/Mo(MoN)$(t{\AA})/NiFe(21{\AA})/CoFe(28{\AA})/Cu(22{\AA})/CoFe(18{\AA})/IrMn(65{\AA})/Ta(25 {\AA})$. Mo and MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The deposition rate of the MoN thin film was decreased and tile resistivity of the MoN thin films were increased as the $N_2$ gas flow was increased. The variations of MR ratio and magnetic exchange coupling field of spin valve structure were smaller with MoN underlayers than that with Mo underlayers up to thickness of $51{\AA}$. MR ratio of spin valves with Mo underlayers was 2.86% at room temperature and increased up to 2.91 % after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 2.16%. The MR ratio of spin valves structure with MoN underlayers for $N_2$ gas flow 1 sccm was 5.27% at room temperature and increased up to 5.56% after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 4.9%.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.136-142
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• 2010

In this paper, the microstrip antenna for penta-band service is proposed. It is designed for a wide band characteristic based on a monopole line combined with a triangular patch structure which has two slits. Total antenna size is $35\;mm{\times}20\;mm$ and it was fabricated on FR-4 substrate($\varepsilon_r=4.4$) which has $35\;mm{\times}75\;mm{\times}1\;mm$ size and a microstrip line with impedance 50 ohm is used. Experimental result shows the impedance bandwidth($VSWR{\leq}3$) of the proposed antenna operated within GSM/DCS/USPCS/UMTS/Bluetooth frequency band. The resonance frequency of the proposed antenna is 0.92, 1.97, 2.45 GHz and the average gain is -2.18, -0.66, -0.58 dBi. Also, the radiation efficiency is 60, 85, 87%. The fabricated antenna is satisfied with the aimed impedance bandwidth ($VSWR{\leq}3$) in GSM/DCS/ USPCS/UMTS/Bluetooth frequency band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.1
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• pp.114-124
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• 2011

In this paper, we present a 2 GHz compact analog phase shifter with linear phase-tune characteristic. The compact phase shifter was designed base on a lumped all pass network and implemented using a ceramic substrate fabricated with thin-film technique. For a linear phase-tune characteristic, a capacitance of the varactor diode for a tuning voltage was linearized by connecting series capacitor and subsequently produced an almost linear capacitance change. The inductor and bias circuit in the all pass network was implemented using a spiral inductors for small size, which results in the size reduction to $4\;mm{\times}4\;mm$. In order to measure the phase shifter using the probe station, two CPW pads are included at the input and output. The fabricated phase shifter showed an insertion loss of about 4.2~4.7 dB at 2 GHz band and a total $79^{\circ}$ phase change for DC control voltage from 0 to 5 V, and showed linear phase-tune characteristic as expected in the design.

• Journal of Navigation and Port Research
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• v.28 no.3
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• pp.213-219
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• 2004

In this paper, a LNA(Low Noise Amplifier) has been developed, which is operating at L-band i.e., 1452∼1492 MHz for satellite DAB(Digital Audio Brcadcasting) receiver. The LNA is designed to improve input and output reflection coefficient and VSWR(Voltage Standing Wave Ratio) by balanced amplifier. The LNA consists of low noise amplification stage and gain amplification stage, which make a using of GaAs FET ATF-10136 and VNA-25 respectively, and is fabricated by hybrid method. To supply most suitable voltage and current, active bias circuit is designed Active biasing offers the advantage that variations in $V_P$ and $I_{DSS}$ will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets $V_{gs}$ for the desired drain voltage and drain current. The LNA is fabricated on FR-4 substrate with RF circuit and bias circuit, and integrated in aluminum housing. As a reults, the characteristics of the LNA implemented more than 32 dB in gain. 0.2 dB in gain flatness. lower than 0.95 dB in noise figure, 1.28 and 1.43 each input and output VSWR, and -13 dBm in $P_{1dB}$.