• Journal of KIISE:Computer Systems and Theory
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• v.36 no.6
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• pp.543-556
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• 2009

Recently, NAND flash memory is being used as the swap device of virtual memory as well as the file storage of mobile systems. Since temporal locality is dominant in page references of virtual memory, LRU and its approximated CLOCK algorithms are widely used. However, cost of a write operation in flash memory is much larger than that of a read operation, and thus a page replacement algorithm should consider this factor. This paper analyzes virtual memory read/write reference patterns individually, and observes the ranking inversion problem of temporal locality in write references which is not observed in read references. With this observation, we present a new page replacement algorithm considering write frequency as well as temporal locality in estimating write reference behaviors. This new algorithm dynamically allocates memory space to read/write operations based on their reference patterns and I/O costs. Though the algorithm has no external parameter to tune, it supports optimized implementations for virtual memory systems, and also performs 20-66% better than CLOCK, CAR, and CFLRU algorithms.

• Proceedings of the Korea Information Processing Society Conference
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• 2012.11a
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• pp.282-283
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• 2012

가상메모리 시스템에서 페이지 부재(page fault)를 최소화하기 위해서는 미래에 사용될 페이지를 미리 예측하는 것이 중요하다. 미래에 사용될 페이지는 이미 입력된 페이지들의 패턴 분석을 통해 예측 가능하며 이를 통해 시스템 성능을 최대화 할 수 있는 페이지 교체 정책(page replacement policy)에 대한 연구가 필요하다. 본 논문에서는 동일한 교체 우선권을 가지는 페이지들 간의 예측 적중률을 높이기 위하여 기존의 NUR(not used recently) 정책에 참조횟수 비트를 추가하여 우선 순위를 판단하는 방법을 제안한다. 제안하는 정책은 C 언어를 기반으로 모델링 되었으며 시뮬레이션 결과 페이지 프레임의 크기와 무관하게 기존의 정책들에 비해 성능이 향상됨을 확인하였다.

• IEMEK Journal of Embedded Systems and Applications
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• v.12 no.3
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• pp.169-176
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• 2017

To replace conventional DRAM, many researches have been done on nonvolatile memories. The DRAM&PCM hybrid memory is one of the effective structure because it can utilize an advantage of DRAM and PCM. However, in order to use this characteristics, pages can be replaced frequently between DRAM and PCM. Therefore, PCM still has major problem that has write-limits. Therefore, it needs an effective page management method for exploiting each memory characteristics dynamically and adaptively. So we aim reducing an average access time and write count of PCM by utilizing two locality for an effective page replacement. We proposed a page selection algorithm which is recently requested to write in DRAM and an algorithm witch uses two locality in PCM. According to our simulation, the proposed algorithm for the DRAM&PCM hybrid can reduce the PCM write count by around 22% and the average access time by 31% given the same PCM size, compared with CLOCK-DWF algorithm.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.777-778
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• 2006

In this thesis, we design and implement a Flash Cache Core Module (FCCM) which operates on the YAFFS NAND flash memory. The FCCM applies memory replacement policy and prefetching policy based on the page reference pattern of applications. Also, implement the Clean-First memory replacement technique considering the characteristics of flash memory. In this method the decision is made according to page hit to apply prefetched waiting area. The FCCM decrease I/O hit frequency up to 37%, Compared with the linux cache and prefetching policy. Also, it operated using less memory for prefetching(maximum 24% and average 16%) compared with the linux kernel.

• Journal of Computing Science and Engineering
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• v.8 no.3
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• pp.157-172
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• 2014

Contemporary embedded systems often use NAND flash memory instead of hard disks as their swap space of virtual memory. Since the read/write characteristics of NAND flash memory are very different from those of hard disks, an efficient page replacement algorithm is needed for this environment. Our analysis shows that temporal locality is dominant in virtual memory references but that is not the case for write references, when the read and write references are monitored separately. Based on this observation, we present a new page replacement algorithm that uses different strategies for read and write operations in predicting the re-reference likelihood of pages. For read operations, only temporal locality is used; but for write operations, both write frequency and temporal locality are used. The algorithm logically partitions the memory space into read and write areas to keep track of their reference patterns precisely, and then dynamically adjusts their size based on their reference patterns and I/O costs. Without requiring any external parameter to tune, the proposed algorithm outperforms CLOCK, CAR, and CFLRU by 20%-66%. It also supports optimized implementations for virtual memory systems.

• Journal of KIISE:Computer Systems and Theory
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• v.33 no.9
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• pp.634-641
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• 2006

Flash memory has many advantages like non-volatility and fast I/O speed, but it has also disadvantages such as not-in-place-update data and asymmetric read/write/erase speed. For the performance of flash memory storage, it is essential for the buffer replacement algorithms to reduce the number of write operations that also affects the number of erase operations. A new buffer replacement algorithm is proposed in this paper, that delays the writes of not-cold-dirty pages in the buffer cache of flash storage. We show that this algorithm effectively decreases the number of write operations and erase operations without much degradation of hit ratio. As a result overall performance of flash I/O speed is improved.

• Journal of Korea Multimedia Society
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• v.10 no.5
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• pp.583-593
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• 2007

We study the page replacement algorithms for demand paging, called CFLRU/C, CFLRU/E and DL-CFLRU/E, that reduce the number of erase operations and improve the wear-leveling degree of flash memory. Under the CFLRU/C and CFLRU/E algorithms, the victim page is the least recently used dean page within the pre-specified window. However, when there is not any dean page within the window, the CFLRU/C evicts the dirty page with the lowest frequency while the CFLRU/E evicts the dirty page with the highest number of erase operations. The DL-CFLRU/E algorithm maintains two page lists called the dean page list and the dirty page list, and first finds the page within the dean page list when it selects a victim. However, when it can not find any dean page within the dean page list, it evicts the dirty page with the highest number of erase operations within the window of the dirty page list. In this thesis, we show through simulation that the proposed schemes reduce the number of erase operations and improve the wear-leveling than the existing schemes like LRU.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.238-241
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• 2002

With the popularity of utilization of the Internet among people, the amount of data in the network rapidly increased. So that, the fall of response time from WWW server, which is caused by the network traffic and the burden on m server, has become more of an issue. This problem is encouraged the rearch by redundancy of requesting the same pages by many people, even though they browse the same the ones. To reduce these redundancy, WWW cache server is used commonly in order to store m page data and reuse them. However, the technical uses of WWW cache that different from CPU and Disk cache, is known for its difficulty of improving the cache hit rate. Consecuently, it is difficult to choose effective WWW data to be stored from all data flowing through the WWW cache server. On the other hand, there are room for improvement in commonly used cache replacement algorithms by WWW cache server. In our study, we try to realize a WWW cache server that stresses on the improvement of the stresses of response time. To this end, we propose the new cache replacement algorithm by focusing on the utilizable information of network distance from the WWW cache server to WWW server that possessing the page data of the user requesting.

• IEMEK Journal of Embedded Systems and Applications
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• v.11 no.2
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• pp.117-123
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• 2016

In general, PCM (Phase Change Memory) is unsuitable as a main memory because it has limitations: high read/write latency and low endurance. However, the DRAM&PCM hybrid memory with the same level is one of the effective structures for a next generation main memory because it can utilize an advantage of both DRAM and PCM. Therefore, it needs an effective page management method for exploiting each memory characteristics dynamically and adaptively. So we aim reducing an access time and write count of PCM by using an effective page replacement. According to our simulation, the proposed algorithm for the DRAM&PCM hybrid can reduce the PCM access count by around 60% and the PCM write count by 42% given the same PCM size, compared with Clock-DWF algorithm.

• Journal of the Korea Society of Computer and Information
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• v.28 no.8
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• pp.1-10
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• 2023

Recently, NAND flash memories have replaced magnetic disks due to non-volatility, high capacity and high resistance, in various computer systems but it has disadvantages which are the limited lifespan and imbalanced operation latency. Therefore, many page replacement policies have been studied to overcome the disadvantages of NAND flash memories. Although it is clear that these policies reflect execution characteristics of various environments and applications, researches on the foundation-policy decision for disk buffer management are insufficient. Thus, in this paper, we propose a foundation-policy recommendation model, called FRM for effectively utilizing NAND flash memories. FRM proposes a suitable page replacement policy by classifying and analyzing characteristics of workloads through machine learning. As an implementation case, we introduce FRM with a disk buffer management policy and in experiment results, prediction accuracy and weighted average of FRM shows 92.85% and 88.97%, by training dataset and validation dataset for foundation disk buffer management policy, respectively.