• Journal of Mechanical Science and Technology
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• v.19 no.8
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• pp.1544-1553
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• 2005

In this article, a micro cantilever array actuated by PZT films is designed and fabricated for micro fluidic systems. The design features for maximizing tip deflections and minimizing fluid leakage are described. The governing equation of the composite PZT cantilever is derived and the actuating behavior predicted. The calculated value of the tip deflection was 15 ${\mu}m$ at 5 V. The fabrication process from SIMOX (Separation by oxygen ion implantation) wafer is presented in detail with the PZT film deposition process. The PZT films are characterized by investigating the ferroelectric properties, dielectric constant, and dielectric loss. Tip deflections of 12 ${\mu}m$ at 5 V are measured, which agreed well with the predicted value. The 18 ${\mu}l/s$ leakage rate of air was observed at a pressure difference of 1000 Pa. Micro cooler is introduced, and its possible application to micro compressor is discussed.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.22-25
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• 2005

In this research, a wafar-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.340-341
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• 2005

Three different composition 130um thickness PZT were fabricated by extrusion method and burned out at $550^{\circ}C$ and sintered at $1260^{\circ}C$/2.5hrs. Actuator was fabricated using glass and Si(100) wafer by MEMS process. From XRD data, in case of DECH, perovskite phase peak strength is higher than others. We were able to obtain the information of grain growth and porosity by SEM images. Also DECH PZT on glass membrane(100um thickness) have larger displacement than others.

• Smart Structures and Systems
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• v.9 no.1
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• pp.21-33
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• 2012

In this study, a Lamb-wave based damage detection approach is proposed for damage localization in plate. A sensor network consisting of three PZT wafer type actuators/sensors is used to generate and detect Lamb waves. To minimize the complication resulted from the multimode and dispersive characteristics of Lamb waves, the fundamental symmetric Lamb mode, $S_0$ is selectively generated through designing the excitation frequency of the narrowband input signal. A damage localization algorithm based upon the configuration of the PZT sensor network is developed. Time-frequency analysis method is applied to purify the raw signal and extract damage features. Experimental result obtained from aluminum plate verified the proposed damage localization approach.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.05a
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• pp.51-55
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• 1999

Recently, manufacturing work has been transformed to advanced technology intensive form from mass production with a little items required in the past. It was demanded that superior workpiece surface integrity. However, the study of ductile mode machining was proceeded actively.In this paper, it is developed Ultra-Micro Indentation Device using the PZT actuator. Experimentally, by using theUltra-Micro Indentation device, the micro fracture behavior of the silicon wafer was invesgated. It was possible that ductile-brittle transition point in ultimate surface of brittle material can be detected by adding an acoustic emission sensor system to the Ultra-Micro Indentation apparatus.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.756-759
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• 2004

We present a piezoelectric actuator using stiffness control and stroke amplification mechanism in order to make large lateral displacement. In this work, we suggest stiffness control approach that generates lateral displacement by increasing the vertical stiffness and reducing the lateral stiffness using additional structure. In addition, an additional structure of a serpentine spring amplifies the lateral displacement like leverage structure. The suggested lateral PZT actuator (bellows actuator) consists of serpentine spring and PZT/electrode layer which is located at the edge of the serpentine spring. The edge of the serpentine spring prevents the vertical motion of PZT layer, while the other edge of the serpentine spring makes stroke amplification like leverage structure. We have determined dimensions of the bellows actuator using ANSYS simulation. Length, width and thickness of PZT layer are 135$\mu$m, 20$\mu$m and 0.4$\mu$m, respectively. Dimensions of the silicon serpentine spring are thickness of 25$\mu$m, length of 300$\mu$m, and width of 5$\mu$m. The bellows actuator has been fabricated by SOI wafer with 25$\mu$m-top silicon and 1$\mu$m-buried oxide layer. The bellows actuator shows the maximum 3.93$\pm$0.2$\mu$m lateral displacement at 16V with 1Hz sinusoidal voltage input. In the frequency response test, the fabricated bellows actuator showed consistent displacement from 1Hz to 1kHz at 10V. From experimental study, we found the bellows actuator using thin film PZT and silicon serpentine spring generated mainly laterally displacement not vertical displacement at 16V, and serpentine spring played role of stroke amplification.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.228-228
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• 2010

본 연구에서는 공진주파수 수식을 이용한 MATLAB과 Modal 해석법을 사용한 ANSYS로 공진주파수 특성을 시뮬레이션 하였다. 외팔보의 시뮬레이션 결과에서는 길이가 길어짐에 따라, 또는 proof mass의 크기가 커짐에따라 공진주파수 특성이 낮아지는 결과가 나타났다. 따라서 본 실험에서의 외팔보는 낮은 공진 주파수를 가지기 위해 Si proof mass를 사용하여 제작하였다. 외팔보 소자는 Silicon-on-insulator wafer를 사용하여 SiO2/Ti/Pt/PZT/Pt 박막을 증착하였고, 마스크를 사용한 식각 공정으로 제작하였다. 이때의 MATLAB, ANSYS 시뮬레이션 결과와 실험에서 제작된 소자는 유사한 공진주파수 특성을 나타내었다.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.83-89
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• 2015

In this paper, we propose a fabrication technique for enhanced electrical properties of piezoelectric thick films with excellent patterning property using sol-infiltration and a direct-patterning process. To achieve the needs of high-density and direct-patterning at a low sintering temperature (< $850^{\circ}C$), a photosensitive lead zirconate titanate (PZT) solution was infiltrated into a screen-printed thick film. The direct-patterned PZT films were clearly formed on a locally screen-printed thick film, using a photomask and UV light. Because UV light is scattered in the screen-printed thick film of a porous powder-based structure, there are needs to optimize the photosensitive PZT sol infiltration process for obtaining the enhanced properties of PZT thick film. By optimizing the concentration of the photosensitive PZT sol, UV irradiation time, and solvent developing time, the hybrid films prepared with 0.35 M of PZT sol, 4 min of UV irradiation and 15 sec solvent developing time, showed a very dense with a large grain size at a low sintering temperature of $800^{\circ}C$. It also illustrated enhanced electrical properties (remnant polarization, $P_r$, and coercive field, $E_c$). The $P_r$ value was over four times higher than those of the screen-printed films. These films integrated on silicon wafer substrate could give a potential of applications in micro-sensors and -actuators.

• Transactions of the Society of Information Storage Systems
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• v.2 no.2
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• pp.96-99
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• 2006

In this research, a wafer-level transfer method of cantilever away on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.55-56
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• 2006

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ($Ba_{0.6}Sr_{0.4}TiO_3$), PZT ($Pb_{1.1}(Zr_{0.52}TiO_{0.48})O_3$) and BTO ($BaTiO_3$) ferroelectric film are fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST, PZT, BTO films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.