• Transactions on Electrical and Electronic Materials
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• 제4권2호
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• pp.20-23
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• 2003

Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.

• 한국인쇄학회지
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• 제14권1호
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• pp.1-15
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• 1996

In this paper, the preparation of lead zirconium titanate(PZT) thin film by sol-gel processing was descried. Thin film coated with thickness of 4${\mu}{\textrm}{m}$ on the stainless steel substrates using the multiple spin-coating process. The crystalline phases of PZT powder and film were investigated by X-ray diffraction pattern and PZT thin film has perovskite structure over 600 C annealing temperature. Corona charging characteristics of the ferroelectric PZT thin film at 600 C were investigated by electrophotographic measurement. A difference in the charging characteristics between positive and negative corona charging was found. The charge acceptance depended in the polarity of corona and the poling of film. According to the D-E hysteresis measurment, PZT thin film can be poled by corona charging without use of top electrode. The remnant polarization in the PZT thin film is generally in the order of 48$\mu$C/$\textrm{cm}^2$. From this results, the ferroelectric PZT thin film will be possible to apply for the add-on type imaging formation.

• E2M - 전기 전자와 첨단 소재
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• 제6권5호
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• pp.436-445
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• 1993

2단계하소법에 의해 낮은 하소온도에서 미세하고도 균일한 PZT분말을 합성하였다. 우선 Zr $O_{2}$와 Ti $O_{2}$ 혼합분말을 1차하소하여 (Z $r_{0.53}$ $Ti_{0.47}$) $O_{3}$(ZTO) 분말을 합성하고 이 ZTO 고용분말에 PbO와 N $b_{2}$ $O_{5}$을 혼합한 후 650-800.deg.C에서 2시간 하소하여 PZT 분말을 합성하였는데 얻어진 분말은 고상반응법에 비해 미세할 뿐만 아니라 XRD 분석결과 710.deg.C의 낮은 하소온도에서도 PZT 단일상을 나타내었다. 2단계하소법에 의해 하소온도를 낮출 수 있는 주된 이유로는 고상반응법에서는 중간생성물인 PbTi $O_{3}$상의 생성이 수반됨으로 850.deg.C 이상 되어야만 안전한 PZT가 생성될 수 있는 점을 들 수 있다. 또 2단계하소법에 의하면 950.deg.C이하의 낮은 소결온도에서도 치밀화가 미루어지는 소결이 가능함을 알 수 있었는데 이와같이 소결온도를 낮출 수 있는 것은 고상반응법에 비해 미세한 PZT 분말을 사용하였기 때문이라 풀이된다.이된다.

• Transactions on Electrical and Electronic Materials
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• 제6권2호
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• pp.35-38
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• 2005

Pb(Zr$_{0.8}$Ti$_{0.2}$)O$_{3}$ powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/Ah03 substrates. The structural properties were examined as a function of sintering temperature. The particle size distribution of the PZT powder derived from the sol-gel process is uniform with the mean particle size of about 2.6 m. As a result of the DTA, the formation of the polycrystalline perovskite phase was observed at around $890^{circ}$CC. In the X-ray diffraction analysis, all PZT thick films showed a perovskite polycrystalline structure without a pyrochlore phase. The perovskite crystallization temperature of PZT thick films was about $890^{circ}$C. The average thickness of the PZT thick films was approximately 80-90 m.

• 한국음향학회지
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• 제28권8호
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• pp.796-805
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• 2009

본 논문에서는 분말사출성형공정 (PIM)을 이용하여 1-3형 압전복합체용 PZT 프리폼 (preform)의 제조에 대한 연구를 수행하였다. PZT 분말을 이용해 제조한 피드스탁 (feedstock)의 점도 및 PVT 특성을 측정하였다. 또한 상용 프로그램인 3D-Timon 프로그램을 이용하여 PIM 제조공정 중 사출 성형체의 충진패턴 온도, 압력분포 및 성형 결함 등을 분석하고, 금형 시스템 및 제조공정을 최적화하였다. 최적화된 PIM 제조공정 조건을 사용하여 PZT rod가 균일하게 분포된 1-3형 압전복합체용 PZT 프리폼을 제조할 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.496-503
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• 1994

In recent years Sol-Gel processing provides an interesting alternative method for the fabrication of ferroelectric thin layers and powder. PZT powder was prepared from an alkoxide-based solution by a Sol-Gel method. Gelation of synthesized complex solutions, microstructure, thermal analysis and crystallization behaviors of the calcined powder were studied in accordance with a water content and a catalyst. Especially gelation and crystallization behavior were analysed with the change of pH. The gelation time decreased as the pH of the mixed solution increased. For PZT powder with 650.deg. C heat treatment, 100% perovskite phase was formed by using either acidic or basic catalyst. By using either acidic or basic catalyst, we were able to get very fine powders of uniform shape with an average particle size of 0.8-1.mu.m.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권12호
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• pp.593-598
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• 2001

Transient liquid phase processing was investigated to decrease processing temperatures while maintaining useful piezoelectric properties in the lead zirconate titanate (PZT) system. Niobium oxide$(Nb_2O_5)$ modified crystalline PZT (PZTN) powder was combined with lead silicate $(PS; PbO-SiO_2)$ glass powder and crystalline titania, zirconia, and niobia. Firing above the melting temperature of the lead silicate $(PS; Tm \risingdotseq\; 714^{\circk}C)$ resulted in liquid phase densification of the PZTN followed by dissolution of the titania, zirconia, and niobia into the liquid phase, and crystallization of additional PZTN. The addition of crystalline titania, zirconia, and niobia to react with the lead oxide from the lead silicate phase resulted in an increase in the dielectric and Piezoelectric properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.710-713
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• 2003

The PZT(KP12) powder was synthesized by sintering at $1250^{\circ}C$ for 2hrs and wet milling for 24 hrs. The PZT composite mixed with PVdF was fabricated into bulk, sheet, and plate type and the characteristics of three types were estimated. The bulk type which has PZT volume percent of 70 showed the best piezoelectric constant. Dielectric constant increased exponentially as an increase of PZT volume percent. The figure of merit of bulk and plate type was better than pure PZT over PZT volume percent of 50.

• 한국세라믹학회지
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• 제42권5호
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• pp.314-318
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• 2005

The effect of reaction parameters in the characteristic of $Pb(Zr_{0.52}Ti_{0.48})O_3$ (below nominal PZT) powders by SHS was investigated in this study. In the preparation of PZT, the effect of starting material contents, pressure, additive on phase fraction and morphology was investigated respectively. The optimum condition of PZT powders were prepared by SHS is $0.37Pb_3O_4+0.52ZrO_2+0.48TiO_2+0.35KClO_3+0.5C,\;(P_{Ar}= 50 atm)$. The PZT powder synthesized in this condition had an spherical shape and the particle size of 0.8$\mu$m.

• 한국세라믹학회지
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• 제28권12호
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• pp.943-952
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• 1991

Lead zirconate titanate(PZT) powders and thin films were prepared from an alkoxide-based solution by sol-gel method. Gelation of synthesized complex solutions, pyrolysis and crystallization behaviors of the dried powder were studied in accordance with a water content and a catalyst. PZT thin films were formed by spin-casting method on silicon and platinum substrates, and characterized. Ester produced from the reactions was completely removed when drying of the gel was finished. Pyrolysis property of the dried PZT gels were changed in order water content, class of catalyst, and quantity of catalyst. Crystalline Pb phase was transiently formed near 250$^{\circ}C$. Basic catalyst is good additive for a formation of perovskite phase in the films, and acidic catalyst for a densified film structure. By the analysis of RBS, Pb element in the PZT films were diffused into silicon substrate, and the pores, may be produced due to local densification around some grains in the films, make an origin of fault in microstructure when holding time goes to be longer at 700$^{\circ}C$.