• Structural Engineering and Mechanics
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• v.85 no.2
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• pp.247-263
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• 2023

The paper deals with the study of the mechanical time-harmonic forced vibration of the hydro-piezoelectric system consisting of the piezoelectric plate and compressible viscous fluid with finite depth. The exact equations of motion of the theory of linear electro-elasticity for piezoelectric materials are employed for describing the plate motion, however, the fluid flow is described by employing the linearized Navier-Stokes equations for a compressible (barotropic) viscous fluid. The plane-strain state in the plate and the plane flow of the fluid are considered and the corresponding mathematical problems are solved by employing the Fourier transform with respect to the space coordinate which is on the coordinate axis directed along the platelying direction. The expressions of the corresponding Fourier transform are determined analytically, however, the inverse transforms are found numerically. Numerical results on the interface pressure and the electrical potential are obtained for various PZT materials and these results are discussed. According to these results, in particular, it is established that the electromechanical coupling effect can significantly decrease the interface pressure.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.412-415
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• 2015

This paper presents a MPPT(Maximum Power Point Tracking) control CMOS interface circuit for vibration energy harvesting. The proposed circuit consists of an AC-DC converter, MPPT Controller, DC-DC boost converter and PMU(Power Management Unit). The AC-DC converter rectifies the AC signals from vibration devices(PZT). MPPT controller is employed to harvest the maximum power from the PZT and increase efficiency of overall system. The DC-DC boost converter generates a boosted and regulated output at a predefined level and provides energy to load using PMU. A full-wave rectifier using active diodes is used as the AC-DC converter for high efficiency, and a schottky diode type DC-DC boost converter is used for a simple control circuitry. The proposed circuit has been designed in a 0.35um CMOS process. The chip area is $950um{\times}920um$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.267-270
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• 2014

This paper presents a CMOS interface circuit for vibration energy harvesting. The proposed circuit consists of an AC-DC converter and a DC-DC boost converter. The AC-DC converter rectifies the AC signals from vibration devices(PZT), and the DC-DC boost converter generates a boosted and regulated output at a predefined level. A full-wave rectifier using active diodes is used as the AC-DC converter for high efficiency, and a schottky diode type DC-DC boost converter is used for a simple control circuitry. A MPPT(Maximum Power Point Tracking) control is also employed to harvest the maximum power from the PZT. The proposed circuit has been designed in a 0.35um CMOS process. The chip area is $530um{\times}325um$. Simulation results shows that the maximum efficiencies of the AC-DC converter and DC-DC boost converter are 97.7% and 89.2%, respectively. The maximum efficiency of the entire system is 87.2%.

• Journal of KSNVE
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• v.8 no.6
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• pp.1093-1102
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• 1998

The success of controllability of smart structures depends on the quality of the bonding along the interface between the main structure and the attached sensing and acuating elements. Generally, the analysis procedures neglect the effect of the interfacial bond layer or assume that this bond layer behaves like viscoelastic material. Three different bond layers. two modified epoxy adhesives, and one isocyanate adhesive were prepared for their toughness and moduli. Bond layer of the chosen adhesive provides an almost perfect bonding condition between the composite structure and the PZT while bended significantly like arrow-shape. The perfect bonding condition is tested by considering various material properties of the bond layers. and based on this perfect bonding condition, the effects of the interfacial bond layer on the dynamic behavior and controllability of the test structure is experimentally studied. Once the perfect bonding condition is achieved. dynamic effects of the bond layer itself on the dynamic characteristics of the main structure is negligible. but the contribution of the attached PZT elements on the stiffness of the multi-layered structure becomes significant when the thickness of the bond layer increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.55-56
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• 2006

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ($Ba_{0.6}Sr_{0.4}TiO_3$), PZT ($Pb_{1.1}(Zr_{0.52}TiO_{0.48})O_3$) and BTO ($BaTiO_3$) ferroelectric film are fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST, PZT, BTO films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.141-153
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• 1997

The paraelectric cubic-to-ferroelectric tetragonal phase transition of the thin Pb(Zr, Ti)$O_3$ (PZT) films grown on MgO(001) substrate was investigated in a series of synchrotron x-ray scattering experiments. As the thickness of the film decreases the transition temperature and the amount of the tetragonal distortion were decreased continuously Different from only the c-domains were existent in the thinnest 25nm thick film. Based on this we propose a model for the domain structure of the tetragonal PZT/MgO(100) film that is very different from the ones suggested in literature. We attribute the suppression of the transition to the substrate field that prefers the c-type domains near the interface and suppresses the tetragonal distortion to minimize the film-substrate lattice mismatch.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.748-752
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• 2004

The Hydrogenated amorphous carbon (a-C:H) thin films are deposited to fabricate suppored layer on silicon substrate with a closed field unbalanced magnetron(CFUBM) sputtering system. This study focuses on the characteristic of Diamond like carbon (DLC) films and Pb(Zr,Ti)$O_3$ (PZT) films for membrane structure. The deposition rate and the surface roughness of DLC fims decrease with DC bias voltage. hardness is 26 GPa at -200 V. Interface of DLC/Si and Pt/DLC layers was excellent.

• Smart Structures and Systems
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• v.30 no.5
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• pp.463-477
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• 2022

In this paper, a hybrid vibration-impedance-based damage monitoring approach is experimentally evaluated for prestressed concrete (PSC) structures with local strand breakage. Firstly, the hybrid monitoring scheme is designed to alert damage occurrence from changes in vibration characteristics and to localize strand breakage from changes in impedance signatures. Secondly, a full-scale PSC anchorage is experimented to measure global vibration responses and local impedance responses under a sequence of simulated strand-breakage events. Finally, the measured data are analyzed using the hybrid monitoring framework. The change of structural condition (i.e., damage extent) induced by the local strand breakage is estimated by changes in a few natural frequencies obtained from a few accelerometers in the structure. The damaged strand is locally identified by tomography analysis of impedance features measured via an array of PZT (lead-zirconate-titanate) sensors mounted on the anchorage. Experimental results demonstrate that the strand breakage in the PSC structure can be accurately assessed by using the combined vibration and impedance features.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.181-184
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• 2017

Multilayer ceramics in which piezoelectric layers of $0.90Pb(Zr_{0.48}Ti_{0.52})O_3-0.05Pb(Mn_{1/3}Sb_{2/3})O_3-0.05Pb(Zn_{1/3}Nb_{2/3})O_3$ (0.90PZT-0.05PMS-0.05PZN) stack alternately with silver electrode layers were prepared by an advanced low-temperature co-fired ceramic (LTCC) method. The electrical properties and bonding strength of the multilayers were associated with the interface morphologies between the piezoelectric and silver-electrode layers. Usually, the inner silver electrodes are fabricated by sintering silver paste in multi-layer stacks. To improve the interface bonding strength, piezoelectric powders of 0.90PZT-0.05PMS-0.05PZN with an average particle size of $23{\mu}m$ were added to silver paste to form a gradient interface. SEM observation indicated clear interfaces in multilayer ceramics without powder addition. With the increase of piezoelectric powder addition in the silver paste, gradient interfaces were successfully obtained. The multilayer ceramics with gradient interfaces present greater bonding strength as well as excellent piezoelectric properties for 30~40 wt% of added powder. On the other hand, over addition greatly increased the resistance of the inner silver electrodes, leading to a piezoelectric behavior like that of bulk ceramics in multilayers.