• Structural Engineering and Mechanics
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• v.54 no.5
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• pp.955-971
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• 2015

In this paper, the influence of the polled direction of piezoelectric materials on the stress distribution is studied under time-harmonic dynamical load (time-harmonic Lamb's problem). The system considered in this study consists of piezoelectric covering layer and piezoelectric half-plane, and the harmonic dynamical load acts on the free face of the covering layer. The investigations are carried out by utilizing the exact equations of motion and relations of the linear theory of electro-elasticity. The plane-strain state is considered. It is assumed that the perfect contact conditions between the covering layer and half-plane are satisfied. The boundary value problems under consideration are solved by employing Fourier exponential transformation techniques with respect to coordinates directed along the interface line. Numerical results on the influence of the polled direction of the piezoelectric materials such as PZT-5A, PZT-5H, PZT-4 and PZT-7A on the normal stresses, shear stresses and electric potential acting on the interface plane are presented and discussed. As a result of the analyses, it is established that the polled directions of the piezoelectric materials play an important role on the values of the studied stresses and electric potential.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.363-366
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• 2004

PZT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk PZT target containing $5\%$ excess PbO was used. They were formed with in-situ process at $650^{\circ}C$ as total thickness of 175 and 250 nm after the depositing of thin PZT films at room temperature, i. e. 2-step Sputtering. It was found that the ferroelectric perovskite phase is formed at $650^{\circ}C$ by XRD and the interface between room temp.-layer and $650^{\circ}C$ -layer is not existent. In the samples undergoing 2-step sputtering the dielectric constant was 600 or more and the leakage current density was $2{\times}10^{-7}A/cm^2$. So, we found that the room temp.-layer on the bottom electrode stabilize the underlaid layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.217-221
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• 1997

We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.107-108
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• 2005

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.4
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• pp.281-288
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• 2001

PZT thin films (3500$\AA$) have been prepard on the Ru/Ru $O_2$ and Ru $O_2$ bottom electrodes with a RF magnetron sputtering system using P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ ceramic target. Ru/Ru $O_2$ bottom electrode was fabricated by in-situ processing controlled the $O_2$ partial pressure. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrode were preferred oriented (101) plane. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrodes showed better electrical properties than those with Ru $O_2$ bottom electrodes because Ru $O_2$ prevented oxygen vacancies and impurities from existing withing the interface and substrate.e.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.20-23
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• 2003

Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.

• Smart Structures and Systems
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• v.19 no.2
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• pp.163-179
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• 2017

The axisymmetric buckling delamination of the Piezoelectric/Metal/Piezoelectric (PZT/Metal/PZT) sandwich circular plate with interface penny-shaped cracks is investigated. The case is considered where open-circuit conditions with respect to the electrical displacement on the upper and lower surfaces, and short-circuit conditions with respect to the electrical potential on the lateral surface of the face layers are satisfied. It is assumed that the edge surfaces of the cracks have an infinitesimal rotationally symmetric initial imperfection and the development of this imperfection with rotationally symmetric compressive forces acting on the lateral surface of the plate is studied by employing the exact geometrically non-linear field equations and relations of electro-elasticity for piezoelectric materials. The sought values are presented in the power series form with respect to the small parameter which characterizes the degree of the initial imperfection. The zeroth and first approximations are used for investigation of stability loss and buckling delamination problems. It is established that the equations and relations related to the first approximation coincide with the corresponding ones of the three-dimensional linearized theory of stability of electro-elasticity for piezoelectric materials. The quantities related to the zeroth approximation are determined analytically, however the quantities related to the first approximation are determined numerically by employing Finite Element Method (FEM). Numerical results on the critical radial stresses acting in the layers of the plate are presented and discussed. In particular, it is established that the piezoelectricity of the face layer material causes an increase (a decrease) in the values of the critical compressive stress acting in the face (core) layer.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1170-1175
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• 1998

PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.

• Journal of the Korean Society for Nondestructive Testing
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• v.20 no.1
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• pp.33-37
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• 2000

The 1-3 piezoelectric composite transducer with 75 volume percents PZT was fabricated by the dicing-filling method. The resonance modes of the 1-3 transducer have been studied with electric impedance measurement as a function of frequency. The fundamental frequencies of the planar and thickness mode were observed at 0.95MHz and 1.63MHz respectively, but the lateral mode was not observed. In the thickness mode, the electromechanical coupling coefficient of the 1-3 piezoelectric composite transducer, 0.54, was very closed to that of the single phase PZT(0.52). The pulse-echo response by exciting the 1-3 transducer with an electric pulse was observed from the water/reflector interface, and analyzed bandwidth by the spectrum of the impulse response. The quality factor Q for the 1-3 transducer was observed as 1.5 smaller than that of the single phase(80) and then the 1-3 transducer may be used to the broad band type transducer applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.2-211.2
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• 2014

Epitaxial complex oxide thin film heterostructures have attracted a great attention for their multifunctional properties, such as ferroelectricity, and ferromagnetism. Two dimensional electron gas (2DEG) confined at the interface between two insulating perovskite oxides such as LaAlO3/SrTiO3 interface, provides opportunities to expand various electronic and memory devices in nano-scale. Recently, it was reported that the conductivity of 2DEG could be controlled by external electric field. However, the switched conductivity of 2DEG was not stable with time, resulting in relaxation due to the reaction between charged surface on LaAlO3 layer and atmospheric conditions. In this report, we demonstrated a way to control the conductivity of 2DEG in non-volatile way integrating ferroelectric materials into LAO/STO heterostructure. We fabricated epitaxial Pb(Zr0.2Ti0.8)O3 films on LAO/STO heterostructure by pulsed laser deposition. The conductivity of 2DEG was reproducibly controlled with 3-order magnitude by switching the spontaneous polarization of PZT layer. The controlled conductivity was stable with time without relaxation over 60 hours. This is also consistent with robust polarization state of PZT layer confirmed by piezoresponse force microscopy. This work demonstrates a model system to combine ferroelectric material and 2DEG, which guides a way to realize novel multifunctional electronic devices.