• Title/Summary/Keyword: PZT Film

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Preparation and Dielectric properties of the Pb(Zr,Ti)$O_3$ Thin Film by Sol-Gel Method (Sol-Gel법에 의한 Pb(Zr,Ti)$O_3$ 박막의 제조 및 유전 특성)

  • Chung, Jang-Ho;Park, In-Gil;Ryu, Ki-Won;Lee, Sung-Gap;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1022-1024
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    • 1995
  • In this study, $Pb(Zr_xTi_{1-x})O_3$(x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol.%] of $Pb(Zr_xTi_{1-x})O_3$ was made and spin-coated on the Pt/$SiO_2$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at $400[^{\circ}C]$ for 10[min.]. Sintering temperature and time were $500{\sim}800[^{\circ}C]$ and $1{\sim}60$[min.]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin films were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of $700[^{\circ}C]$ for 1 hour. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.

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Preparation and structural properties of the Pb(Zr, Ti)${O}_{3}$ thin film by Sol-Gel method (Sol-Gel 법에 의한 Pb(Zr, Ti)${O}_{3}$ 박막의 제조 및 구조적 특성)

  • 이영준;정장호;이성갑;이영희
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.44 no.7
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    • pp.914-918
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    • 1995
  • In this study, Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ (x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol%] of Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ was made and spin-coated on the Pt/SiO$_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at 400[.deg. C] for 10[min.]. Sintering temperature and time were 500~800[.deg. C] and 1~60[min.]. The coating process was repeated 6 times and the final thickness of the thin films were about 4800[A]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin fulms were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hours. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.ively.

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Non-volatile Control of 2DEG Conductance at Oxide Interfaces

  • Kim, Shin-Ik;Kim, Jin-Sang;Baek, Seung-Hyub
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.211.2-211.2
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    • 2014
  • Epitaxial complex oxide thin film heterostructures have attracted a great attention for their multifunctional properties, such as ferroelectricity, and ferromagnetism. Two dimensional electron gas (2DEG) confined at the interface between two insulating perovskite oxides such as LaAlO3/SrTiO3 interface, provides opportunities to expand various electronic and memory devices in nano-scale. Recently, it was reported that the conductivity of 2DEG could be controlled by external electric field. However, the switched conductivity of 2DEG was not stable with time, resulting in relaxation due to the reaction between charged surface on LaAlO3 layer and atmospheric conditions. In this report, we demonstrated a way to control the conductivity of 2DEG in non-volatile way integrating ferroelectric materials into LAO/STO heterostructure. We fabricated epitaxial Pb(Zr0.2Ti0.8)O3 films on LAO/STO heterostructure by pulsed laser deposition. The conductivity of 2DEG was reproducibly controlled with 3-order magnitude by switching the spontaneous polarization of PZT layer. The controlled conductivity was stable with time without relaxation over 60 hours. This is also consistent with robust polarization state of PZT layer confirmed by piezoresponse force microscopy. This work demonstrates a model system to combine ferroelectric material and 2DEG, which guides a way to realize novel multifunctional electronic devices.

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A study on the Structural Properties of PZT/BT thick film (PZT/BT 세라믹 후막의 구조적 특성에 관한 연구)

  • Lee, Sang-Heon;Lim, Sung-Soo;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05b
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    • pp.57-59
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    • 2005
  • Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTi03 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films.

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A Circuit Simulation Model of Ferroelectric Capacitors and its AHDL Implementation (강유전체 캐패시터의 회로 시뮬레이션 모델과 이의AHDL 구현)

  • Kim, Shi-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.10
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    • pp.25-32
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    • 2000
  • We provided a model for accurately computing the Hysteresis characteristics of the ferrelectric thin film capacitors. This model is developed form the semi-empirical ferroelectric model based on the double well harmonic oscillator. We have seen that this model is consistent with physical analysis using the Preisach's hysteresis distribution. This model includes the parameters representing the slope of changing Hysteresis curves and the imprint of ferroelectric capacitors. Besides, we showed that this model could predict accurate sub-hystersis loop by the turning points when the polarities of applied voltage were changed before saturation. The simulation and measurement result showed that this model is well applicable to both PZT and SBT materials. This model has been described by AHDL and successfully implemented into Spectre simulator to provide circuit design environment of commercial CAD tools such as Cadence software.

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Real Time Monitoring of Ionic Species Generated from Laser-Ablated Pb$(Zr_{0.52}Ti_{0.48})O_3$ Target Using Pulsed-Field Time-Of-Flight Mass spectrometer

  • 최영구;임훙선;정광우
    • Bulletin of the Korean Chemical Society
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    • v.19 no.8
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    • pp.830-835
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    • 1998
  • The characteristics of the ablation plume generated by 532 nm Nd: YAG laser irradiation of a Pb(Zr0.52Ti0.48)O3 (PZT) target have been investigated using a pulsed-field time-of-flight mass spectrometer (TOFMS). The relative abundance of O+, Ti+, Zr+, Pb+, TiO+, and ZrO+ ions has been measured and discussed. TiO+ and ZrO+ ions were also found to be particularly stable within the laser ablation plasma with respect to PbO+ species. The behavior of the temporal distributions of each ionic species was studied as a function of the delay time between the laser shot and the ion extraction pulse. The most probable velocity of each ablated ion is estimated to be Vmp=1.1-1.6x 105 cm/s at a laser fluence of 1.2 J/cm2, which is typically employed for the thin film deposition of PZT. The TOF distribution of Ti+ and Zr+ ions shows a trimodal distribution with one fast and two slow velocity components. The fast velocity component (6.8x 10' cm/s) appears to consist of directly ablated species via nonthermal process. The second component, originated from the thermal evaporation process, has a characteristic velocity of 1.4-1.6 x 105 cm/s. The slowest component (1.2 x 105 cm/s) is composed of a dissociation product formed from the corresponding oxide ion.

Evaluating the performance and characteristics of Rutile TiO2 thin film for Triboelectric Nanogenerator (TENG) (Triboelectric Nanogenerator (TENG)를 위한 Rutile TiO2 박막 성능 및 특성 평가)

  • Moon, Ji-Hyeon;Kim, Han-Jae;Kim, Hyo-Bae;Ahn, Ji-Hoon
    • Journal of Surface Science and Engineering
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    • v.54 no.6
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    • pp.324-330
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    • 2021
  • As energy harvesting technology becomes important in relation to environmental issues, piezoelectric materials that convert mechanical energy into electrical energy are attracting attention. However, PZT, a representative material for piezoelectricity, is becoming difficult to use due to the problem that its components can cause environmental pollution. For this reason, recent research suggests a triboelectric nanogenerator (TENG) that generates energy through the combined effect of triboelectricity and electric induction for alternative piezoelectric devices. In TENG, electrical power is determined by the dielectric constant, thickness, and grain generation of the charged material. Therefore, in this study, a Rutile phase TiO2 thin film with high dielectric constant was formed using the spin-coating process and the effect of annealing was investigated. For electrical analysis, a TENG device was fabricated using PTFE as a material with an opposite charge, and electrical output according to film thickness and grain formation was comparatively analyzed.

Effects of Particle Size on Properties of PZT -Based Thick Films (입자 크기가 PZT계 압전 후막의 물성에 미치는 영향)

  • 김동명;김정석;천채일
    • Journal of the Korean Ceramic Society
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    • v.41 no.5
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    • pp.375-380
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    • 2004
  • Pb(Ni$\_$1/3/Nb$\_$2/3/)O$_3$-PbZrO$_3$-PbTiO$_3$ thick films were screen-printed on platinized alumina substrates and fired at 800-1000$^{\circ}C$. Two kinds of powders with different particle size were prepared by attrition and ball milling methods. Effects of particle size of starting material on the microstructure and electrical properties of the thick films were investigated. Average particle size of attrition milled-powder (0.44 ${\mu}$m) was much smaller than that of ball milled-powder (2.87 ${\mu}$m). Average grain size of the thick film prepared from attrition-milled powder was smaller than that of the thick film prepared from ball-milled powder at the sintering temperature of 800$^{\circ}C$. However, the difference in average particle size became smaller with increasing the sintering temperature. Thick films prepared from attrition-milled powders showed more uniform and denser microstructures at all firing temperatures. Thick films prepared from attrition-milled powders had better electrical properties at the firing temperature above 900$^{\circ}C$ than thick films prepared from ball-milled powders. Dielectric constant, remanent polarization and coercive field of the thick film prepared from attrition-milled powders and fired at 900$^{\circ}C$ were 559, 16.3 ${\mu}$C/cm$^2$, and 51.3 kV/cm, respectively.

Effect of Isotropic Strain on Properties of Amorphous Magnetic films (아몰퍼스자성박막의 특성에 미치는 등방성 스트레인의 영향)

  • 신광호;김흥근;김영학;사공건
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.478-480
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    • 2001
  • Fe-base amorphous films exhibit large saturation magnetostriction and soft magnetic Properties, which make them suitable for strain sensor applications. Most important material properties for the performance of these elements are the superior soft magnetic properties, such as high permeability and small coercive force, as well as magnetoelastic properties. It is well known that the strain generated in film deposition and/or post-heat treatment processes is one of important material properties, which effects on the soft magnetic properties of the film via magnetoelastic coupling. In this study, the effect of an isotropic strain in plane of magnetic films have been performed experimently. Amorphous films with the composition of (F $e_{90}$ $Co_{10}$)$_{78}$S $i_{l2}$ $B_{10}$ were employed in this study. The film with 5${\mu}{\textrm}{m}$ thick was deposed onto the polyimide substrate with 50${\mu}{\textrm}{m}$ thick by virtue of RF sputtering. The film was subject to post annealing with a static magnetic field with 500Oe magnetic field intensity at 35$0^{\circ}C$ for 1 hour. The polyimide substrate with the film was bonded with an adhesive on PZT piezoelectric substrate with 600${\mu}{\textrm}{m}$ thick in applying voltage of 500V. The change in MH loops of films due to the isotropic strain was measured by using VSM. The coercive force was evaluated from MH loops. It has shown in the results that M-H loops of films are subject to change considerably with a dc voltage, resulting of the magnetization rotation from normal to plane direction as the applied voltage is changed from 500V to 250V.50V.V.

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The Study on the Surface Reaction of $SrBi_{2}Ta_{2}O_{9}$ Film by Magnetically Enhanced Inductively Coupled Plasma (MEICP 식각에 의한 SBT 박막의 표면 반응 연구)

  • Kim, Dong-Pyo;Kim, Chang-Il
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.4
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    • pp.1-6
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    • 2000
  • Recently, SrBi$_{2}$Ta$_{2}$ $O_{9}$(SBT) and Pb(Zr,Ti) $O_{3}$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) with higher read/ write speed, lower power consumption and nonvolartility. SBT thin film has appeared as the most prominent fatigue free and low operation voltage. To highly integrate FRAM, SBT thin film has to be etched. A lot of papers have been reported over growth of SBT thin film and its characteristics. However, there are few reports about etching SBT thin film owing to difficult of etching ferroelectric materials. SBT thin film was etched in CF$_{4}$Ar plasma using magnetically enhanced inductively coupled plasma (MEICP) system. In order to investigate the chemical reaction on the etched surface of SBT thin films, X-ray Photoelecton spectrosocpy (XPS) and Secondary ion mass spectroscopy(SIMS) was performed.

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