• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.129-133
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• 2006

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately $60{\mu}m$. All PZT thick films showed the typical XRD patterns of a polycrystalline rhombohedral structure. And in the PZT thick films sintered at $1100^{\circ}C$, the pyrochlore phase was observed due to the evaporation of PbO. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at $1050^{\circ}C$ were 445.2 and 1.90 % at 1 kHz, respectively. The remanent polarization and coercive field of the PZT thick films sintered at $1050^{\circ}C$ were $14.15{\mu}C/cm^2$ and 19.13 kV/cm, respectively.

• The Journal of the Acoustical Society of Korea
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• v.28 no.8
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• pp.796-805
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• 2009

In this paper, a fabrication process for PZT preform of 1-3 type piezo-composite were studied using powder injection molding (PIM). The viscosity and the Pressure-Volume-Temperature (PVT) characteristics of the fabricated PZT feedstock were analyzed. The filling patterns, pressure, temperature distributions, and forming defects of the preform were analyzed with 3D TIMON commercial packages during PIM process. Also the fabrication conditions and the delivery system of the preform were optimized during the entire PIM process. Based on the simulated results, the preform having uniform distributions of the PZT rod was fabricated with the PIM process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.220-226
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• 2000

The piezoelectric material for piezoelectric transformer needs the high electromechanical coupling factor( $k_{p}$) the piezoelectric constant( $d_{33}$) and the mechanical quality factor( $Q_{m}$)in order to obtain high voltage step-up ratio and low temperature rising. In this study the piezoelectric transformers were fabricated using Pb［$Zr_{0.45}$/ $Ti_{0}$48//L $u_{0.02}$(M $n_{1}$3//S $b_{2}$3/)$_{0.05}$］ $O_3$(PMS-PZT) and Pb［Z $r_{0.25}$/ $Ti_{0.375}$(M $g_{1}$3//N $b_{2}$3/)$_{0.375}$］ $O_3$+0.5wt%Mn $O_2$(PMN-PZT) ceramics. The piezoelectric properties of PMS-PZT and PMN-PZT were measured. The voltage set-up ratios of the piezoelectric transformers using PMS-PZT and PMN-PZT were the value of 15, 20 respectively under 100$_{KΩ}$ in Rosen type transformer.r.ormer.r.r.r.r.r.r.

• Journal of the Korean Society for Nondestructive Testing
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• v.18 no.1
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• pp.33-41
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• 1998

The response characteristics of the PZT transducers during glass capillary breakage were studied at the epicenter of the glass plate. The PZT transducers had been made by using EC-65 PZT ceramics(supplied by Edo co.) with a constant area and a various thickness. The theoretical displacement and velocity at the epicenter of glass plate with an air boundary condition were calculated by assuming the point load of 1N force strength and a rise time of 280 ns with a ramped functional dependence, and the 1st pulses of the PZT transducer may be considered as the vertical velocity incident on the electrode of the PZT ceramic. The responses of the PZT transducer may be depended on the thickness mode of the PZT ceramic below 0.33 in the ratio of the thickness to the diameter of PZT ceramic, but the reponse of the PZT transducer may be depended on the other modes of PZT transducer in the addition of the thickness mode of the PZT ceramic above 0.33. The full time of half maximum at the 1st pulse was nearly 280 ns without a variation of applied breakage load and the resonant frequency of the PZT transducer, and then may be considered as the rise time of a AE source. The maximum amplitude of the 1st pulse depended on the incident vertical velocity and capacitance of the PZT transducer. Therefore, the full time of half maximum and maximum amplitude of the 1st pulse may be considered as the rise time and strength of acoustic emission source respectively.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.647-647
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• 1998

(La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures have been grown on LaAlO3 substrates by pulsed laser deposition (PLD) to investigate asymmetric polarization of Pb(Zr,Ti)O3 (PZT) thin flims with different electrode configuration. P-V hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LaCoO3 (LCO_/PZT/LSCO showed a largely asymmetric P-V hystersis loop and large relaxation of the remanent polarization at the negatively poled state, which means that the negatively poled state was unstable. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an interal electric firld inside the PZT layer. It is suggested that internal electric field is caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and CSCO/PZT interfaces were 0.6 V and -0.12 V, respectively.

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.684-690
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• 2000

In order to study effects of interfacial layers between $Pb(Zr,Til)Q_3(PZT)$ films and electrodes for Metal-Ferroelectric-MetaI(MFM) structure capacitors, we have fabricated the capacitors with the Pt/PZT/interfacial-layer/Pt/$TiO_2/SiO_2$/Si structure. $PbTiO_3(PT)$ interfacial layers were formed by sol-gel deposition and PbO, ZrO, and $TiO_2$ thin layers were deposited by reactive sputtering. $TiO_2$ interface layers result in the finest grains of PZT(crystalline Temp. $600^{\circ}C$) films compare to $PbO_2\;and\;ZrO_2$ layers. However, as the thickness of $TiO_2$ layer increases. PZT thin films become rough and electrical characteristics were deteriorated due to remained anatase phase. On the other hand. PT interface layers result in improved morphology of PZT films and do not significantly change ferroelectric properties. It is a also observed that seed layers at the middle and top of PZT films do not give significant effects on grain size but the PT seed layer at the interface between the bottom electrode and the PZT films results in the small grain size.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.106-106
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• 2003

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.588-590
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• 1989

Charge sensitivity and its frequency response characteristics were measured in poled and aged lead zirconate titanate(PZT) ceramics prepared by sintering. Aged PZT has lower charge sensitivity and lower mounted resonance frequency than just poled PZT.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.742-749
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• 2002

The PZT thin films werre deposited on Pt/Ti/$SiO_2$/Si substrate by R. F. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target. When interlayers(PbO, $TiO_2$, PbO/$TiO_2$) were inserted between PZT and Pt, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. Compared to the pure PZT thin films, dielectric constant, dielectric loss and polarization properties of PZT thin films with interlayers were considerably improved. From XPS depth profile analysis, it was confirmed that PZT thin films and interlayers existed independently. In particular, PZT thin films deposited on interlayer(PbO/$TiO_2$) showed the best dielectric property (${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$).

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.30-35
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• 2004

PMW-PZT thick films of about $30{\mu}m$ thickness were fabricated on Pt/$TiO_2$/$SiN_x$Si substrate by the hybrid method of screen printing and PZT sol application. With the increase of the number of the sol application times, the sintered density and electrical properties of PMW-PZT thick films were evidently increased. For the PMW-PZT thick film with PZT sol application of 10-times, the dielectric constant ($\varepsilon_r$) was 745 at the frequency of 100 KHz and thepiezoelectric coefficient ($d_33$) was 155 pC/N at the applied pressure of 1 atm.