• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1586-1588
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• 2003

The Pb$(Zr{_{0.7}}Ti_{0.3})O_3$[PZT(70/30)] thin films were fabricated on Pt/$TiO_2/SiO_2$/Si substrate by RF sputtering method. The effects of Ar/$O_2$ ratio on the structural and dielectric properties of PZT thin fillms were investigated. In the case of the PZT thin films deposited with condition of 50/50$(Ar/O_2) $ ratio, the grain of the PZT thin films were fine and uniform. Increasing of $O_2$ ratio, the dielectric constant was increased. In this case the dielectirc constant and dielectric loss of PZT thin fims were about 627 and 0.010, respectively.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.5
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• pp.644-648
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• 1995

Transparent xBa(La$_{1}$2/Nb$_{1}$2/)O$_{3}$-(1-x)Pb(Zr, Ti)O$_{3}$ (x=8.5, 9.0[mol.%], Zr/Ti=70/30~40/60) ceramics were fabricated by the two-stage sintering method, the electrooptic properties were investigated with Ba(La$_{1}$2/Nb$_{1}$2/)O$_{3}$ content and Zr/Ti composition ratio. Decreasing the Zr/Ti ratio, the electrooptic property was changed from a quadratic electrooptic effect to a linear electrooptic effcet. In the BLN-PZT 9.0/50/50 specimen having the tetragonal structure, the linear electrooptic coefficient had the highest value of 6.01*10$^{-10}$ [m/V] and in the BLN-PZT 9.0/55/45 specimen which located near the MPB region, the quadratic electrooptic coefficient had the highest value of 10.53*10$^{-16}$ [m$^{2}$/V$^{2}$].

• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.52-58
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• 1986

$Pb(Zr_{0.525} Ti_{0.475})O_3$ piezoelectric ceramics both unmodified and doped with NiO were prepared by the conventional oxide techniques using sintering temperature from 900 to to 125$0^{\circ}C$. The difference in densification process between unmodified and NiO doped PZT ceramics was studied by shrinkage vs. firing temperatures and it was caused by increasing defect concentration in calcining process of NiO doped PZT ceramics. And nickel oxide solubility limit for $Pb(Zr_{0.525} Ti_{0.475})O_3$ ceramics is shown to be at the range from 0.2wt% to 0.5wt% from this defect model micro-structures dielectric and piezolectric properties of Nio doped PZT ceramics.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.839-846
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• 1996

Epitaxial (La, Sr)$CoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$by pulsed laser deposition for ferroelectric field effect transistor. Epitaxial $LaCoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$ heterostructures exhibited 70$\mu C/cm^2$ and 17 $\mu C/cm^2$at a positively and negatively poled states, respectively. On the other hand, epitaxial (La, Sr)$CoO_3/Pb(Zr,\;Ti)O_3/LaCoO_3$heterostructures show the remnant polarization states opposite to the $LaCoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$ heterostructures. This indicates that the interface between (La, Sr)$CoO_3$ (LSCO) and $Pb(Zr, Ti)O_3(PZT)$ layers affects the asymmetric polarization remanence through electrochemical nature. The resistivity of $LaCoO_3$ (LCO) layer was found to be dependent on an ambient oxygen, primarily the ambient oxygen pressure during deposition. The resistivity of the LCO layer varied in the range of 0.1-100 $\Omega$cm. It is suggested that, with an appropriate resistivity of the LCO layer, the LCO/PZT/LSCO heterostructure can be used as the ferroelectric field effect transistor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.217-221
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• 1997

We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.300-308
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• 1982

A new perovskite type compound, (Pb1a-χKy□χ-y) (Zr0.33Ti0.67)O3-χ+y/2 was proposed and synthesized by "Wet-Dry Combination Technique". This defect ferroelectric material was characterized by partial substitutions of K+ for Pb+2 in Pb(Zr0.33Ti0.67)O3. This material was mono-phasic perovskite compound at 800℃ for 1hr., but ZrO2 was more or less isolated from the (Pb1a-χKy□χ-y) (Zr0.33Ti0.67)O3-χ+y/2. As a result, snitering temperature, sintered density, curie temperature, and dielectric constant of test pieces decreased and a-axis was nearly constant, while c-axis gradually decreased with the value x in the region of tetragonal phase of PZT. It was also recognized that the defect structure caused by adding K+ was found in both A-site cation and O-site anion vacancies in the defect PZT.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.134-140
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• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.11-12
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• 2005

[ $Pb(Zr_{0.48}Ti_{0.52})O_3$ ] (PZT) thin films were deposited on Pt(111)/Ti/$SiO_2$/Si substrates by pulsed laser deposition. In order to study the effect of different laser pulse repetition rate on the dielectric and ferroelectric properties of PZT thin films,2 Hz and 5 Hz of laser pulse repetition rate were selected. We compared the results of XRD pattern, dielectric constant and hysteresis characteristics. From the experimental data, we found that the electrical properties of PZT thin films which grown ar 2 Hz of laser pulse repetition rate were better than those which grown at 5 Hz of laser pulse repetition rate.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.836-850
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• 1996

In this study, we have analyzed structural analysis and measured ferroelectric characteristics of PZT thin films prepared by sol gel process with different sintering conditions and different Zr/Ti mot%. When the Zr mot% of PZT thin film was increased, it was found that the remanent. polarization and coercive field were decreased and increased, respectively. Also, the maxium dielectric constant of PZT(50/50) thin film was 786.8. We got double hysteresis(anti-fcrroelectric) curve from PbZrO$_{3}$ thin film. As heating rate goes up, pyrochlore phase of PZT thin film was decreased and dielectric and ferroelectric characteristics were improved. As a result of variation of sintering temperature and time 500.deg. C-800.deg. C and 5 sec.-8 hours, respectively, we got optimal sintering temperature and time. The optimium sintering temperature and time of conventional furnace method and rapid thermal processing method were 650.deg. C-700.deg. C for 30-60 minutes and 700.deg. C/20 seconds-2 minutes, respectively.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.19-24
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• 1983

Dielectrics used as capacitor was studied in the system of $Pb(MgW)_{0.5} O_3-PbTiO_3-PbZrO_3$ Curie tempera-tures of $PbTiO_3 PbZrO_3$ and $Pb[MgW]_{0.5} O_3$ were 49$0^{\circ}C$ 23$0^{\circ}C$ and 39$0^{\circ}C$ respectively. When these materials formed solid solution the more amount of $Pb(MgW)_{0.5}O_3$ was increased the more Curie temperature lowered and dielectric constant increased. Higher dielectric constants were measured in the solid solution of which X-Ray diffraction patterns were changed. Especially Curie temperature and dielectric constant were 85$^{\circ}C$ and 4159 respectively in the composition of 60 $Pb(MgW)_{0.5}O_3-30 PbTiO_3-10PbZrO_3$. Also in this composition ferroeletric material with thermal stability was obtained.