• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.969-973
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• 1998

Pb(Zr, Ti)O3 (PZT) (Zr:Ti= 52: 48) thin films were prepared on MgO(100) substrates by dipping-py-rolysis process using metal naphthenates as starting materials. Thin films were fabricated by spin coating technique and the precursor films were prefired at 20$0^{\circ}C$ in air for 0.5, 1, 2, 3, and 24 h followed by final heat treatment at 75$0^{\circ}C$ for 30min. Film prefired for 24 h lost orientational properties and pole figure analysis showed the lost of the epitaxial relationship between the films and substrate while highly a/c-axis oriented thin films were obtained for the samples prefired for 1, 2, and 3h.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.297-304
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• 1991

Dielectric hysteresis characteristics of Pb(Zr0.52Ti0.48)O3 ceramics have been investigated as a function of the amount of MnO2 addition ranged from 0.0 wt% in Pb(Zr0.52Ti0.48)O3 ceramics enhanced the dielectric strength, aging effect and remanent polarization, while reduced the coercive field. These results could be explained by the effect of Mn-Vo association due to the substitution of Mn for the (Zr, Ti) site in PZT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.273-278
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• 2000

In order to study effects of interface layers between PZT films and electrodes for MFM(Metal-Ferroelectric-Metal) structure capacitors, we have fabricated the capacitors with the Pt/PZT/interface-layer/Pt/$TiO_2/SiO_2/Si$ structure. $PT(PbTiO_3)$ interface layers were formed by sol-gel deposition and PbO, $ZrO_2$ and $TiO_2$ thin layers were deposited by reactive sputtering. $TiO_2$ interface layers result in the finest grains of PZT films compared to $PbO_2$ and $ZrO_2$ layers. On the other hand, PT interface layers result in improved morphology of PZT films and do not significantly change ferroelectric properties. It is also observed that seed layers at the middle and top of PZT films do not give significant effects on grain size but the PT seed layer at the interface between the bottom electrode and the PZT films results in the small grain size.

• Journal of the Korean Ceramic Society
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• v.28 no.12
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• pp.953-960
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• 1991

Effect of MgO doping was studied by measuring complex impedance of PZT[Pb(Zr0.52Ti0.48)O3] samples doped with 0.25~6 mol% MgO. Electrical conductivity of PZT samples increased within 1.5 mol% of MgO doping. However above 1.5 mol%, no noticeable changes were found. Activation energy and pre-exponential factor of electrical conductivity were found to decrease within 1.5 mol% of MgO doping, but increase above 1.5 mol%. Therefore it was concluded that the decrease of electrical conductivity with MgO doping was due to the decrease of activation energy.

• Journal of Integrative Natural Science
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• v.8 no.4
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• pp.244-249
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• 2015

The PZT thin films were deposited on Si(100) substrate using RF magnetron sputtering method. And the PZT thin films were post annealed at various temperatures to form perovskite phase. To analyze PZT thin films, surface profiler, XRD, XPS, CA, and SFE were used. The thickness increased from 536.5 to 833.2 nm as post annealing temperature increased. The perovskite PZT was observed from PZT-823 and pyrochlore PZT, $ZrO_2$, $TiO_2$, and perovskite $PbZrO_3$ were observed. From the XPS, the atomic percentages of Pb, Zr, Ti, and O were calculated and the portion of Pb increased to PZT-823 and decreased to PZT-923 and then increased to PZT-1023. Also, the CA and SFE was effected on post annealing temperature and as a function of atomic percentage of Pb, the CA and SFE was transformed.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1618-1620
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• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] multilayered thin films were deposited by RF Sputtering method on the Pt/Ti/$SiO_2$/Si substrate. This procedure was repeated several times to form PZT(4060)/(6040) heterolayerd thin films. The effects on the structural and dielectric properties of PZT multilayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(4060)/(6040) multilayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) multilayered thin films. The relative dielectric constant and dielectric loss at 100Hz of the PZT(4060)/(6040)-5 multilayered thin films were about 1106 and 0.016, respectively.

• Journal of the Korean Ceramic Society
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• v.42 no.7 s.278
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• pp.516-520
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• 2005

Conditions for formation of perovskite Pb(Zr$_{0.52}$Ti$_{0.48}$)O$_{3}$ phase by the hydrothermal synthesis are investigated. Pb(Zr$_{0.52}$ Ti$_{0.48}$)O$_{3}$ ceramics were synthesized by hydrothermal process above 180$^{\circ}C$ for 2 h reaction using 5$\~$30 M KOH solution as a mineralizer. Particle size increases in proportion to the mineralizer concentration. As a result of EOX analysis, PZT powders synthesized using 50 M of KOH as a mineralizer were considered as 2.42 mol$\%$ K doped-PZT powders. And 2.42 mol$\%$ K doped-PZT has much higher mechanical quality factor than undoped PZT ceramics. The sintering properties showed 7.987 g/cm$^{3}$ of sintered density and 3$\~$4 $\mu$m of grain size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.398-401
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• 2001

The dielectric and piezoelectric properties of Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$-Pb(Zr,Ti)O$_3$ceramics were investigated as a function of Zr/Ti ratio. Curie temperature was increased with the increase of Ti amount. At the Zr/Ti ratio of 0.495/0.505, dielectric constant and electromechanical coupling factor(kp) showed the maximum value of 1159 and 0.523 respectively.

• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.187-194
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• 1990

Effects of MnO2 addition ranged from 0.0wt% to 5.0wt% on the microstructure and dielectric and piezoelectric properties of the Pb(Zr0.52 Ti0.48)O3 Ceramics have been investigated. The solubility limit of MnO2 in Pb(Zr0.52 Ti0.48)O3 is about 0.5wt%, and MnO2 as a valence state of Mn3+ is substituted for (Zr, Ti) lattice site in PZT solid-solution. The addition of MnO2 up to 0.5wt% in Pb(Zr0.52 Ti0.48)O3 brings increase of density, but decreased of grain size and tetragonality. Dielectric constant slightly decreases, but both coupling factor(Kp) and mechanical quality factor(Qm) increase with the addition of MnO2. However, excess amount of MnO2 addition more than 0.75wt% results in rapid decrease of resistance. Dielectric constant and tan $\delta$ increase due to the second phase and inhomogeneous Mn distribution.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.496-503
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• 1994

In recent years Sol-Gel processing provides an interesting alternative method for the fabrication of ferroelectric thin layers and powder. PZT powder was prepared from an alkoxide-based solution by a Sol-Gel method. Gelation of synthesized complex solutions, microstructure, thermal analysis and crystallization behaviors of the calcined powder were studied in accordance with a water content and a catalyst. Especially gelation and crystallization behavior were analysed with the change of pH. The gelation time decreased as the pH of the mixed solution increased. For PZT powder with 650.deg. C heat treatment, 100% perovskite phase was formed by using either acidic or basic catalyst. By using either acidic or basic catalyst, we were able to get very fine powders of uniform shape with an average particle size of 0.8-1.mu.m.