• Korean Journal of Materials Research
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• v.12 no.2
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• pp.160-165
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• 2002

High-frequency dielectric and microwave absorbing properties have been investigated in ferroelectric materials (BaTiO$_3$(BT), (1-x)Pb$Mg_{\frac{1}{3}}Nb_{\frac{2}{3}}$)O$_3$-xPbTiO$_3$(PMN-PT), (1-x)Pb$Mg_{\frac{1}{3}}Nb_{\frac{2}{3}}$O$_3$-xPb(Zn_{\frac{1}{3}}Nb_{\frac{2}{3}}$)O$_3$(PMN-PZN) for the aim of thin microwave absorbers in the frequency range of mobile telecommunication. The specimenns are prepared by conventional ceramic processing and complex permittivity has been measured by transmission/reflection method. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave range and their domiant loss mechanism is considered to be domain wall relaxation. The microwave absorbance of BT 0.9PMN-0.1PT, and 0.8PMN-0.2PZN specimen (determined at 2) are found to be 99.5% (at a thickness of 4.5 mm), 50% (2.5 mm), and 30% (2.5 mm), respectively. It is suggested that PMN-PT or PMN-PZN ferroelectrics are good candidate materials for the spacer of λ/4 absorber. The use of ferroelectric materials is effective in reducing the thickness of absorber with their advantage of high dielectric constant.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.3
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• pp.253-260
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• 1992

In this study, the dielectric, structural and electrical properties of Pb(ZnS11/3TNbS12/3T)OS13T-BaTiOS13T-PbTiOS13T system ceramics were investigated with respect to the variation of YS12TOS13T addition amount. As the YS12TOS13T addition amount is increased, the resistivity at 100$^{\circ}C$ and the resonant/antiresonant frequencies and the frequency constant are slowly increased, and the grain growth is restrained until 0.4 wt% YS12TOS13T addition amount but continuously increased with the addition amount more than 0.4 wt% YS12TOS13T. As the YS12TOS13T addition amount is increased, the density, the diffuseness of dielectric constant and the induced polarization are increased until 0.4 wt% YS12TOS13T addition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.13-16
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• 1994

In this paper, xPb(Zn$_{1/3}Nb_{2/3}$)$O_3$-yPbTiO$_3$-zPbZrO$_3$-(0.5wt%)MnO$_2$ ceramics were fabricated by the mixed oxide method sintered at $1250^{\circ}C$ for 2[hr] and then the deielectric, electromechanical coupling factor($K_{p}$ and mechanical coupling factor(Qm) properties were investigated. In 0.1PZN-0.45PT-0.45PZsample, dielectric properties and electromechanical coupling factor were 829 and 29%. In the case of 0.5PZN-0.45PT-0.50PZ sample, that was 101 according to mechanical quality facotr. molphotropic phase boundary(MPB) certained area which $PbTiO_3$addition quatity 40∼50[㏖%].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.126-129
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• 1999

Dielectric and piezoelectric properties of perovskite materials such as La modified $Pb(Zr,Ti)O_3$ ceramics and $Pb(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3$ single crystals were investigated for cryogenic capacitor and actuator applications. Enhanced extrinsic contributions resulted in piezoelectric coefficient (d33) as high as 250 pC/N at 30 K, superior to that of PZT ($d_{33}$ ~ 100 pC/N). This cryogenic property enhancement was associated with retuning the MPB (or cryogenic temperatures. PZN-PT single crystals exhibited dramatic property improvements such as $d_{33}$ > 500 pC/N at 30 K as a result of an engineered domain state.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.259-265
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• 2003

For the aim of thin microwave absorbers used in mobile telecommunication frequency band, this study proposed a high permittivity dielectrics(λ/4 spacer) coated with ITO thin films of 377 $\Omega$/sq(impedance transformer). High frequency dielectric properties of ferroelectric ceramics, electrical properties of ITO thin films and microwave absorbing properties of ITO/dielectrics were investigated. Ferroelectric materials including $BaTiO_3$(BT), 0.9Pb($Mg_{1}$3/Nb$_{2}$3/)$O_3$-0.1 $PbTiO_3$(PMN-PT), 0.8 Pb (Mg$_{1}$3/$Nb_{2}$3/)$O_3$-0.2 Pb($Zn_{1}$3$_Nb{2}$3/)$O_3$(PMN-PZN) were prepared by ceramic processing for high permittivity dielectrics,. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave frequency range. The microwave absorbance (at 2 ㎓) of BT, 0.9PMN-0.1PT, and 0.8PMN-0.2PZN were found to be 60%(at a thickness of 3.5 mm), 20% (2.5 mm), and 30% (2.5 mm), respectively. By coating the ITO thin films on the ferroelectric substrates with λ/4 thickness, the microwave absorbance is greatly improved. Particularly, when the surface resistance of ITO films is closed of 377 $\Omega$/sq, the reflection loss is reduced to -20 ㏈(99% absorbance). This is attributed to the wave impedance matching controlled by ITO thin films at a given thickness of high permittivity dielectrics of λ/4 (3.5 mm for BT, 2.5 mm for PMN-PT and PMN-PZN at 2 ㎓). It is, therefore, successfully proposed that the ITO/ferroelectric materials with controlled surface resistance and high dielectric constant can be useful as a thin microwave absorbers in mobile telecommunication frequency band.

• Journal of the Korean Ceramic Society
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• v.45 no.3
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• pp.139-141
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• 2008

The piezoelectric properties of tetragonal 0.88Pb$(Zn_{1/3}Nb_{2/3)O_3-0.12PbTiO_3$ single crystals are characterized along the <111> direction, which composed the engineering domain configuration in the tetragonal phase. The <111>-oriented crystal possessed smaller $d_{33}$ values compared to the crystal along the <001> spontaneous polarization direction. Based on phenomenological theory, it is shown that the engineering domain configuration does not enhance the piezoelectric constant in tetragonal 0.88Pb$(Zn_{1/3}Nb_{2/3)O_3-0.12PbTiO_3$ single crystals. In addition, the electrostrictive coefficients of $Q_{12}=-0.03706m^4/C^2,\;Q_{11}=0.10765m^4/C^2,\;and\;Q_{44}=0.02020m^4/C^2$ of tetragonal 0.88PZN-0.12PT single crystals were calculated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.42-45
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• 1992

In this study, the structural, dielectric and electrical properties of $0.85Pb(Zn_{1/3}Nb_{2/3})O_3-0.1BaTiO_3-0.05PbTiO_3$ ceramics were investigated with respect to the variations of $La_2O_3$ addition amount. The specimen with 0.2 [wt%] $La_2O_3$ addition amount, which has the coupling constants with the value of $k_p$=44.8[%]. $k_{31}$=25.4[%] and the piezoelectric constant with $d_{31}=100{\times}10^{-12}$[C/N] respectively, exhibits the relatively good values in the applications of electrostriction actuators.

• Smart Structures and Systems
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• v.10 no.1
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• pp.67-87
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• 2012

A dragonfly inspired flapping wing is investigated in this paper. The flapping wing is actuated from the root by a PZT-5H and PZN-7%PT single crystal unimorph in the piezofan configuration. The non-linear governing equations of motion of the smart flapping wing are obtained using the Hamilton's principle. These equations are then discretized using the Galerkin method and solved using the method of multiple scales. Dynamic characteristics of smart flapping wings having the same size as the actual wings of three different dragonfly species Aeshna Multicolor, Anax Parthenope Julius and Sympetrum Frequens are analyzed using numerical simulations. An unsteady aerodynamic model is used to obtain the aerodynamic forces. Finally, a comparative study of performances of three piezoelectrically actuated flapping wings is performed. The numerical results in this paper show that use of PZN-7%PT single crystal piezoceramic can lead to considerable amount of wing weight reduction and increase of lift and thrust force compared to PZT-5H material. It is also shown that dragonfly inspired smart flapping wings actuated by single crystal piezoceramic are a viable contender for insect scale flapping wing micro air vehicles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.70-73
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• 1989

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})O_3-Ba(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3(0.12{\leq}x{\leq}0.21, 0.24{\leq}y{\leq}0.33$) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1050 [$^{\circ}C$], 2[hr]. Morphotropic phase boundary region was chosen for the composition. 0.55 PZN-0.21 BZN-0.24 PT specimen had the highest value of relative dielectric constants, 5353. The curie temperature of specimens were increased linearly with PT content. Near the morphotropic phase boundary, electro-mechanical coupoling factor and mechanical quality factor of the specimens had the highest values.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.4
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• pp.620-626
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• 1994

As the electrostrictive actuator for optic control, PZN-BT-PT ceramics were investigated for the influences of sintering conditions on the structural, electrostrictive properties and the optical properties of Fabry-perot Interferometer using eletrostrictive ceramics. The specimen SS15T, sintered 1hr at 1150$^{\circ}C$, is sutible for eletrostrictive actuator because its piezoelectric constants(dS131T) and strain(XS131T) at dc 10kV/cm had the higest value of 175${\times}$10S0-12TC/N, -255${\times}$10S0-6TΔl/l respectively. As the dc electric field increased, the interference effect of Fabry-Perot Interferometer was increased. The most intense interference fringe and the maximum power of 160${\mu}$W were observed at dc 6kV/cm. Thus it was considered that specimen SS15T could be used as the electrostrictive actuator for optic control.