• Journal of the Society of Cosmetic Scientists of Korea
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• v.34 no.2
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• pp.75-82
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• 2008

In this study, the photocatalysed degradation of safranin-O was investigated using Au colloids. Au metal nanoparticle wasused to eliminate safranin-O fast in solution. Au nanoparticles were prepared reduction method using $Na_2CO_3$ and PVP in aqueous solution. The degradation of safranin-O was examined using a variety of condition such as concentration of Au colloid or Au salt, reaction pH, and reaction time in the presence of UV light and $H_2O_2$. As the concentration of Au colloid increases, the rate of dye degradation increases. The photo-oxidation of the safranin-O was monitored spectrophotometrically. The properties of Au nanoparticles were characterized by UV-Vis spectroscopy. In addition, catalytic capacities of Au nanoparticles were also determined by UV-Vis spectroscopy.

• Resources Recycling
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• v.23 no.6
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• pp.22-29
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• 2014

Recycling process of iron should be developed for efficient recovery of neodymium (Nd), rare metal, from acid-leaching solution of Nd magnet. In this study, $FeCl_3$ solution as iron source was used for preparation of iron nano particles with the condition of various factors, such as, reductant, and surfactant. $Na_4P_2O_7$ and Polyvinylpyrrolidone (PVP) as surfactants, $NaBH_4$ as reductant, and palladium chloride ($PdCl_2$) as a nucleation seed were used. Iron powder was analyzed by using XRD, SEM for measuring shape and size. Iron nano particles were prepared at the ratio of 1:5 (Fe (III) : $NaBH_4$). Size and shape of iron particles were round-form and 50 ~ 100 nm size. Zeta-potential of iron at the 100 mg/L of $Na_4P_2O_7$ was negative value, which was good for dispersion of metal particle. When $Na_4P_2O_7$ (100 mg/L), PVP($FeCl_3:PVP$ = 1 : 4, w/w) and Pd($FeCl_3:PdCl_2$ = 1 : 0.001, w/w) were used, iron nano particles which were round-shape, well-dispersed and near 100 nm-sized range. In this condition, $FeCl_3$ solution changed with spent Nd leachate solution, and then it is possible to be made round-formed iron nano particles at pH 9 and at the reaction bath over 20 L which is not include any surfactant.

• Journal of Integrative Natural Science
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• v.10 no.4
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• pp.245-248
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• 2017

The Cu and CuSn/PVP nanofibers were fabricated by electrospinning method by controlling various parameters. The precursor solution was prepared with copper(II) acetate monohydrate ($Cu(CH_3COO)_2$) and tin chloride dihydrate ($SnCl_2{\cdot}2H_2O$), and polyvinylpyrrolidone (PVP) for adjusting viscosity. The fabricated nanofibers were calcined at 873 K in Ar atmospheric environment for 5 hours to remove the solvent and polymer. The morphology and diameter of nanofibers were measured by optical microscopy (OM) with Motic image plus 2.0 program. The components and chemical environment were investigated with X-ray photoelectron spectroscopy (XPS). From the XPS survey spectra, we confirmed that CuSn/PVP nanofibers were successfully fabricated. The XPS peaks of C 1s and N 1s were remarkably decreased after calcination of the nanofibers at 873 K. It implies that the PVP was completely decomposed after calcination at 873 K.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.479-479
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• 2011

Flexible inverters based on complementary thin-film transistor (CTFTs) are important because they have low power consumption and other advantages over single type TFT inverters. In addition, integrated CTFTs in flexible electronic circuits on low-cost, large area and mechanically flexible substrates have potentials in various applications such as radio-frequency identification tags (RFIDs), sensors, and backplanes for flexible displays. In this work, we introduce flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The CTFTs were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. Basic electrical characteristics of individual transistors and the whole CTFTs were measured by a semiconductor parameter analyzer (HP4145B, Agilent Technologies) at room temperature in the dark. Performance of those devices then was measured under static and dynamic mechanical deformation. Effects of cyclic bending were also examined. The voltage transfer characteristics (Vout- Vin) and voltage gain (-dVout/dVin) of flexible inverter circuit were analyzed and the effects of mechanical bending will be discussed in detail.

• Korean Chemical Engineering Research
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• v.45 no.6
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• pp.560-565
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• 2007

Copper fine particles, ranging from $0.11{\mu}m$ to $0.64{\mu}m$ in average size, were prepared by a chemical reduction method using hydrazine ($N_2H_4$) as a reduction agent in waste copper solutions. The effect of the amount of hydrazine addition was investigated on the properties of the obtained powders. Also, the effect of the addition of dispersing agents [Polyvinyl alcohol (PVA), polyvinyl pyrrolidone (PVP)] during particle synthesis was studied. The powders, obtained from 1 M waste copper solutions, showed the mixtures of Cu and $Cu_2O$ crystals at low hydrazine addition amounts of 0.8 mol and 1.0 mol, while those exhibited pure Cu crystals at adequate hydrazine addition amount of 0.12 mol. The average size of the Cu powders decreased with increasing the concentrations of hydrazine and dispersing agents. The addition of PVA to the solutions as a dispersing agent was more effective than that of PVP in preventing the aggregation of particles.

• Macromolecular Research
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• v.15 no.7
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• pp.693-696
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• 2007

• Bulletin of the Korean Chemical Society
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• v.27 no.10
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• pp.1674-1676
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• 2006

• Horticultural Science & Technology
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• v.16 no.2
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• pp.239-241
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• 1998

The experiments were carried out to improve culture efficiency of rhizome and mericlone propagation through settlement of problems occurring during culture period of temperate Cymbidium species. Shooting efficiency from rhizome of C. forrestii 'Nokwoon' was improved, when cultured in $H_3P_4$ medium (Hyponex 3+peptone 4g/L) supplemented with 170mg/L $NaH_2PO_4{\cdot}H_2O$ and 0.4mg/L Thiamin e HCl, but the other varieties were not influenced to shooting efficiency by additives. Medium in which rhizome of C. nishiuchianum 'Hodukjiwha' was cultured became less browned in $H_3P_4$ medium added with 150mg/L PVP, but the other treatments of antioxidants was failed to prevent the medium browning. Re-formation of rhizome from young shoots of C. forrestii 'Sojub', 5.5cm in length occured in $H_3P_4$ enriched with 2.0 mg/L NAA and 1.0 mg/L BA under darkness, but axillary buds were elongated in the medium with 1.0 mg/L NAA and 3.0 mg/L BA under light condition. On the other hand, rhizomes from young shoot of C. forrestii 'Seosinmae' and 'Songmae', 5.5cm and 2.5cm in length respectively were reformed in 2.0 mg/L NAA and 5.0mg/L kinetin under darkness, but multishoot from young shoot were emerged in 2.0mg/L NAA and 3.0mg/L BA.

• Bulletin of the Korean Chemical Society
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• v.32 no.9
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• pp.3338-3342
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• 2011

We fabricated ceria ($CeO_2$) nanofibers by applying a mixed solution of polyvinylpyrrolidone (PVP) and various concentrations of cerium nitrate hydrate ($Ce(NO_3)_3$) ranging from 15.0 to 26.0 wt % by the electrospinning process. Ceria nanofibers were obtained after calcining PVP/$Ce(NO_3)_3$ nanofiber composites at 873 and 1173 K. The SEM images indicated that the diameters of $CeO_2$ nanofibers calcined at 873 and 1173 K were smaller than those of nanofibers obtained at RT. As the amount of cerium increased, the diameter of $CeO_2$ nanofibers increased. XRD analysis revealed that the ceria nanofibers were in cubic form. TEM results revealed that the ceria nanofibers were formed by the interconnection of Ce oxide nanoparticles. The ceria nanofibers obtained at low concentrations of Ce (CeL) showed spotty ring patterns indicated that the ceria nanofibers were polycrystalline structure. And the ceria nanofibers obtained at high concentration of Ce (CeH) showed fcc (001) diffraction pattern. XPS study indicated that the oxidation of Ce shifted from $Ce^{3+}$ to $Ce^{4+}$ as the calcination temperature increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.