• Title/Summary/Keyword: PVA brush

Search Result 5, Processing Time 0.024 seconds

Effect of PVA Brush Contamination on Post-CMP Cleaning Performance (Post-CMP Cleaning에서 PVA 브러시 오염이 세정 효율에 미치는 영향)

  • Cho, Han-Chul;Yuh, Min-Jong;Kim, Suk-Joo;Jeong, Hae-Do
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.22 no.2
    • /
    • pp.114-118
    • /
    • 2009
  • PVA (polyvinyl alcohol) brush cleaning method is a typical cleaning method for semiconductor cleaning process especially post-CMP cleaning. PVA brush contacts with the wafer surface and abrasive particle, generating the contact rotational torque of the brush, which is the removal mechanism. The brush rotational torque can overcome theoretically the adhesion force generated between the abrasive particle and wafer by zeta potential. However, after CMP (chemical mechanical polishing) process, many particles remained on the wafer because the brush was contaminated in previous post-CMP cleaning step. The abrasive particle on the brush redeposits to the wafer. The level of the brush contamination increased according to the cleaning run time. After cleaning the brush, the level of wafer contamination dramatically decreased. Therefore, the brush cleanliness effect on the cleaning performance and it is important for the brush to be maintained clearly.

Contact Pressure Distribution Measurement of PVA Brush for Post CMP Cleaning (CMP 후 세정용 PVA 브러쉬의 접촉압력 분포 측정)

  • Ryu, Sun-Joong;Kim, Doeg Jung
    • Journal of the Semiconductor & Display Technology
    • /
    • v.15 no.4
    • /
    • pp.73-78
    • /
    • 2016
  • Contact pressure distribution between PVA brush and semiconductor wafer was measured by developing a test setup which could simulates the post CMP cleaning process. The test set-up used thin film type pressure sensor which could measure the pressure distribution of contact area with the resolution of $15.5ea/cm^2$. As the experimental results, it was verified that there had been severe contact pressure non-uniformity along the axis of the brush and between the adjacent projections on the brush's surface. These results should be considered when developing post CMP cleaning stage or designing the PVA brush.

A Study on the Removal of LPP CMP Induced Defect (LPP(Landing Plug Poly) CMP Induced Defect 제거에 관한 연구)

  • Oh, Pyeong-Won;Choi, Jea-Gon;Choi, Yong-Soo;Choi, Geun-Min;Song, Yong-Wook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.07a
    • /
    • pp.235-238
    • /
    • 2004
  • 본 연구는 반도체소자 제조공정에 적용되는 CMP공정 중 LPP(Landing Plug Poly) Contact간의 소자 분리를 위해 진행되는 LPP CMP의 후 세정 과정에서 유발되는 방사형 Defect 제거에 관한 내용이다. 방사형 Defect은 LPP CMP 후에 노출되는 BPSG, Poly, Nitride Film과 연마재로 사용되는SiO2 입자, 후 세정과정에서 적용되는 SC-1, DHF, $NH_4OH$ Chemical과 Brush와의 상호작용에 의해 발생되며, Cleaning시의 산성 분위기 하에서 각 물질간의 pH와 Zeta Potential의 차이에서 기인한다. 이 Defect을 제거하기 위해 LPP CMP후에 Film 표면에 노출되는 각 물질의 표면 특성과 CMP 후 오염입자의 흡착과 재 흡착에 영향을 미치는 Electrostatic force와 Van der Waals force, PVA Brush에 의한 Mechanical force의 상호작용을 고려하여 최적 후 세정 조건을 제시 하였다.

  • PDF

Improvement of CMP and Cleaning Process of Large Size OLED LTPS Thin Film Using Oscar Type Polisher (Oscar형 연마기를 이용한 대면적 OLED용 LTPS 박막의 CMP 처리 및 세정 공정 개선)

  • Shim, Gowoon;Lee, Hyuntaek;Song, Jongkook
    • Journal of the Semiconductor & Display Technology
    • /
    • v.21 no.4
    • /
    • pp.71-76
    • /
    • 2022
  • We evaluated and developed a 6th generation large-size polisher in the type of face-up and Oscar. We removed the hillocks of the low temperature poly-silicon (LTPS) thin film with this polisher. The surface roughness of LTPS was lowered from 7.9 nm to 0.6 nm after CMP(chemical mechanical polishing). The thickness of the LTPS is measured through reflectance in real time during polishing, and the polishing process is completed according to this thickness. The within glass non-uniformity (WIGNU) was 6.2% and the glass-to-glass non-uniformity (GTGNU) was 2.5%, targeting the LTPS thickness of 400Å. In addition, the residual slurry after the CMP process was removed through the Core Flow PVA Brush and alkaline chemical.

Fabrication and Characterization of Novel Electrospun PVPA/PVA Nanofiber Matrix for Bone Tissue Engineering

  • Franco, Rose-Ann;Nguyen, Thi Hiep;Lee, Byong-Taek
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2011.05a
    • /
    • pp.51.2-51.2
    • /
    • 2011
  • A novel electrospun nanofiber membrane was fabricated using combined poly (vinylphosphonic acid) (PVPA) and polyvinyl alcohol (PVA) intended for bone tissue engineering applications. PVPA is a proton-conducting polymer used as primer for bone implants and dental cements to prevent corrosion and brush abrasion. The phosphonate groups of PVPA have the ability to crosslink and attach itself to the hydroxyapatite surface facilitating faster integration of the biomaterial to the bone matrix. PVA was combined with PVPA to provide hydrophilicity, biocompatibility and improve its spinnability. To improve its mechanical strength, PVPA/PVA and neat PVA mixtures were combined to produce a multilayer scaffold. The physical and chemical properties of the of the fabricated matrix was investigated by SEM and TEM morphological analyses, tensile strength test, XRD, FT-IR spectra, swelling behavior and biodegradation rates, porosity and contact angle measurements. Biocompatibility was also examined in vitro by cytotoxicity and cell proliferation studies with MTT assay and cell adhesion behavior by SEM and confocal microscopy.

  • PDF