• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.87-87
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.109-110
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• 1992

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.209-209
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• 2008

$BaTiO_3$는 대표적인 강유전체 재료로서 적층형 세라믹 콘덴서 (MLCC), PTC thermistor, resonator 등 다양한 분야에서 사용되고 있다. $BaTiO_3$ 기본조성으로 하는 PTC 써미스터는 온도가 올라감에 따라 저황이 높아지는 특성을 가지고 있으며, 이러한 PTCR 특성은 작동되는 큐리온도에 따라 그 적용이 달라진다. PTCR 소자는 소결온도, 소결분위기, 불순물, 첨가제 등의 제조공정상의 인자들과 기공률, 결정립 크기 등이 복합적으로 작용해 PTCR 특성에 영향을 미치기 때문에 제조하기에 무척 까다로운 소자로 알려져 있다. 하지만 우수한 특성을 지닌 PTCR 소자를 제조하기 위하여 새로운 조성개발이 이루어지고 있으며, 전기적 특성 개선, 재현성 확보, 제조원가 절감 등의 측면에서 새로운 공정개발이 이루어지고 있다. 본 연구에서는 Sm을 첨가한 $BaTiO_3$계 재료의 PTCR 특성에 미치는 Ti/Ba ratio 등의 변화에 따른 영향을 조사하고 공기 중과 환원분위기 중에서 소결된 시편의 차이점과 재산화 처리에 따른 PTC 특성에 미치는 영향을 R-T 측정으로 고찰하였다. 본 조성은 환원 분위기에서 소결할 경우 그 미세구조는 Ti/Ba ratio비가 높을 때 grain size가 커져 상온 비저항을 낮출 수 있었다. Sm 첨가로 상온 비저항값은 낮출 수 있었으나 공기 중에서 재산화 처리하더라도 jumping ratio$(R_{max}/R_{25^{\circ}C})$는 Ti/Ba ratio와 거의 무관한 것으로 분석되었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.114-114
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.113-113
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• 2002

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.152.1-152
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.60-60
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• 1997

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.553-561
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• 1993

In this study, thr effect of $Bi_2O_3$ and BN addition as grain boundary modifiers on sintering and electrical properties of semiconducting PTCR(Positive Temperature Coefficient of Resistivity) mate rial were analyzed using TMA, XRD and Complex Impedance Spectroscopy method. Bismut.h Ox~de and Boron Nitride were added to Y-doped $BaTiO_3$ respectively. Bismuth sesquioxide up to O.lmol%solubil~ ty limit of $Bi_2O_3$ in Y--$BaTiO_3$ ceramics-retarded densification and grain growth, and further addition mitigated these retardation effects. The resistivity at room temperature increased with increasing amount of $Bi_2O_3$ and thus decreased the PTCR effect, probably due to the $Bi_2O_3$ segregation on the grain boundaries. From the complex ~mpedance pattern, it is known that the grain boundary resisitivity is dominant on the whole resistivity of sample. In the result of applying the defect chemistry, $Bi^{3+} \;and \; Bi^[5+}$ are substituted for Ua and Ti site, respectively. Boron nitride decomposed and formed liquid phase among the $BaTiO_3$ grains. The decomposed com~ ponents made the second phase and existed the tr~ple juntion from the result of EPMA. From the complex impendencc pattern, the gram and grain boundary resistivity were small. The grain size increased with increasing BN contents, and decreased grain boundary resistivity enhanced the PTCR effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.52-52
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• 2008

The positive temperature coefficient of resistivity (PTCR) effect in (1-x)$BaTiO_3$ - $x(Bi_{0.5}K_{0.5})TiO_3$ doped with $Nb_2O_5$ was investigated. $(Bi_{1/2}K_{1/2})TiO_3$ (BKT) is more environment-friendly than $PbTiO_3$ in order to use in PTC thermistors. The incorporation of 1 mol% BKT to $BaTiO_3$ increased the Curie temperature (Tc) to $148^{\circ}C$. Doping of $Nb_2O_5$ to $Ba_{0.99}(Bi_{0.5}K_{0.5})_{0.01}TiO_3$ (BaBKT) ceramic has enhanced its PTCR effects. For the sample containing 0.025 mol% $Nb_2O_5$, it showed good PTCR properties; low resistivity at room temperature (${\rho}_r$) of 30 $\Omega{\cdot}cm$, a high PTCR intensity of approximately $3.3\times10^3$, implying the ratio of maximum resistivity to minimum resistivity (${\rho}_{max}/{\rho}_{min}$) in the measured temperature range, and a large resistivity temperature factor (a) of 13.7%/$^{\circ}C$ along with a high Curie temperature (Tc) of $167^{\circ}C$. In addition, the cooling rate of the samples during the sintering process had an influence on their PTCR behavior. All the samples showed the best ${\rho}_{max}/{\rho}_{min}$ ratio when they have cooled down at a rate of $600^{\circ}C$/min.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.723-727
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• 2011

0.935Ba$TiO_3$-0.065($Bi_{0.5}Na_{0.5}$)$TiO_3+xmol%MnO_2$ (BBNTM-x) ceramics with $0{\leq}x{\leq}0.05$ were fabricated with muffled sintering by a modified synthesis process. Their microstructure and enhanced positive temperature coefficient of resistivity (PTCR) characteristics were systematically investigated in order to obtain lead-free high TC PTCR thermistors. All specimens showed a perovskite structure with a tetragonal symmetry and no secondary phase was observed. Grain growth was achieved when the doped MnO2 was increased above 0.02 mol%. This is due to the effect of positive Mn ion doping as an acceptor compensating a Ba vacancy occurred by the higher donor dopant concentration of $Bi^{3+}$ ion. Especially, enhanced PTCR characteristics of the extremely low ${\rho}_{RT}$ of $9\;{\Omega}{\cdot}cm$, PTCR jump of $5.1{\times}10^3$, ${\alpha}$ of 15.5%/$^{\circ}C$ and high $T_C$ of $167^{\circ}C$ were achieved for the BBNTM-0.04 ceramics.