• International Journal of Precision Engineering and Manufacturing
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• v.6 no.4
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• pp.49-54
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• 2005

In this paper, micro structuring technique using localized electrochemical deposition (LECD) with ultra short pulses was investigated. Electric field in electrochemical cell was localized near the tool tip end region by applying pulses of a few hundreds of nano second duration, Pt-Ir tip was used as a counter electrode and copper was deposited on the copper substrate in mixed electrolyte of 0.5 M $CuSO_4$ and 0.5 M $H_2SO_4$, The effectiveness of this technique was verified by comparison with ECD using DC voltage. The deposition characteristics such as size, shape, surface, and structural density according to applied voltage and pulse duration were investigated. The proper condition was selected based on the results of the various experiments. Micro columns less than $10{\mu}m$ in diameter were fabricated using this technique. The real 3D micro structures such as micro spring and micro pattern were made by the presented method.

• Bulletin of the Korean Chemical Society
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• v.17 no.2
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• pp.192-198
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• 1996

We present a theoretical formulation of diffusion process on solid surface based on multidimensional transition state theory (TST). Surface diffusion of single adatom results from hopping processes on corrugated potential surface and is affected by surface vibrations of surface atoms. The rate of rare events such as hopping between lattice sites can be calculated by transition state theory. In order to include the interactions of the adatom with surface vibrations, it is assumed that the coordinates of adatom are coupled to the bath of harmonic oscillators whose frequencies are those of surface phonon modes. When nearest neighbor surface atoms are considered, we can construct Hamiltonians which contain terms for interactions of adatom with surface vibrations for the well minimum and the saddle point configurations, respectively. The escape rate constants, thus the surface diffusion parameters, are obtained by normal mode analysis of the force constant matrix based on the Hamiltonian. The analysis is applied to the diffusion coefficients of W, Ir, Pt and Ta atoms on the bcc(110) plane of W in the zero-coverage limit. The results of the calculations are encouraging considering the limitations of the model considered in the study.

• Journal of the Korean Society of Propulsion Engineers
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• v.12 no.5
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• pp.26-34
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• 2008

The performance of several catalysts to decompose the high test peroxide (HTP) was described in this paper. Manganese oxide, Platinum and Iridium were coated on the gamma alumina. The catalyst activity as active materials was measured at the flask reactor. The response time of various catalysts was also measured with a 50 Newton class thruster. $Ir/Al_2O_3$ that showed the best activity in the flask reactor and response time at the thruster, failed the reaction when continuous mode test was carried out with the thruster. $Pt/Al_2O_3$ and $MnO_2/Al_2O_3$ can be substitutes to decompose the HTP. In addition, for larger thruster, $MnO_2/Al_2O_3$ can be a good catalyst because its cost is below 5 % of $Pt/Al_2O_3$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.384-392
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• 1997

Potassium lithium niobate(KLN) single crystal for a nonlinear-optic material, which changes the wavelength of lasers, has a ferroelectric tetragonal tungsten bronze structure at room temperature. It has been very hard to get single crystals of good quality due to the cracks during cooling process. In order to investigate the composition change due to the evaporation of solution during the growth, the thermogravimetric analysis was carried out. In atmospheric condition at $1000^{\circ}C$ which is about $10^{\circ}C$ higher than the crystal growing temperature, the weight change was negligible amount of $1.46{\times}10^{-5}$g/($\textrm{cm}^2$hr). By using both the Pt plate as the nucleation site and the slow cooling method with temperature fluctuation, KLN single crystal of good quality of size 1 cm could be obtained. The phase transition temperature was $490^{\circ}C$, which was higher than that reported by other researchers of the other composition. The optical anisotropy due to the absorption of OH-band exists in the range of IR.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flim without paling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ PLT (x=0.1) thin film having 10 mol% La content was deposited on a $Pt/TiO_{x}/SiO_{2}/Si$ substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is $6.6{\times}10^{-9}C/cm_{2}\cdot K$ without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are $1.03{\times}10^{-11}C\cdot cm/J$ and $1.46\times 10^{-9}C\cdot cm/J$, respectively. The PLT(10) thin film has voltage responsivity (Rv) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D*) of the PLT(10) thin film are$9.93{\times}10^{-8}W/Hz^{1/2}$ and $1.81\times 10^{6}cmHz^{1/2}/W$ at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• Polymer(Korea)
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• v.26 no.1
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• pp.28-36
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• 2002

In this study, we synthesized novel thiophene derivatives by the protection of the carboxyl group of 3-thiophene acetic acid with differently substituted benzyl groups. While 3-thiophene acetic acid is not electro-polymerizable, the modified monomers can be easily electro-oxidized to form stable electroactive polymers. The protecting groups can be easily removed in the solid state and the desired reactive carboxyl group can be introduced on the polymer surface. SEM observations show that obtained polymer films show a very good film surface and homogeneous morphology on the Pt electrode. After introduction of macromonomer, FT-IR spectrum shows new absorption bands at 1650 and $1550 cm^{-1}$, which is consistent with the formation of an amide bond. Electroactivity measurements were examined by cyclic voltammogram(CV). These polymers showed the characteristic electrochemical behavior of poly(3-alkylthiophene)s with reversible redox transition in the range of 0.7-0.9 V.

• Polymer(Korea)
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• v.33 no.3
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• pp.203-206
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• 2009

Polyaniline Emeraldine salt (PANI-salt) prepared by the common chemical oxidative polymerization caused the corrosion of the metallic injection mold by protonic acid such as HCl which used as a dopant. PANI-salt, polyaniline doped with dodecylbenzenesulfonic acid (DBSA), was obtained by the emulsion polymerization in nonpolar organic solvent, toluene. In this study DBSA was used as a dopant along with a surfactant. PANI-salt and high impact polystyrene (HIPS) have a good solubility in toluene. Blends with different ratio of PANI and HIPS were prepared through a solution-cast blending. The structure of PANI-salt was characterized by FT-IR and UV-Vis. The morphology, thermal, and electrical properties for PANI-HIPS blends were investigated. Injection molded under $103^{\circ}C$, 120 psi, PANI-HIPS showed the highest electrical conductivity ($6.02{\times}10^{-5}\;S/cm$) after blending PANI (50 mL) and HIPS (1 g).

• Journal of the Korean Chemical Society
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• v.41 no.2
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• pp.88-97
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• 1997

The silyltriflates$(Ph_{3-n}SiH(OTf)_n)$have been produced by the reaction of triphenylsilane and triflic acid$(CF_3SO_3H)$at low temperature. These highly reactive compounds are a valuable reagent for the synthesis of numerous new functional substituted silane derivatives. The reaction of silyltriflates with alkenyl- and alkynylmagnesium bromide as well as organolithium compounds gave new silanes$Ph_2SiHR(R=\;C(CPh,\;CH=CH_2,\;CH_2CH=CH_2,\; (CH_2)_2CH=CH_2,\;(CH_2)_3CH=CH_2)$in high yields. The hydrosilation of prepared alkenyl- and alkynylsilanesPh_2SiHR$in the presence of a platinum catalyst(Pt/C) at high temperature$(200{\circ}C)$gave carbosilane polymers$((Ph_2SiCH=CPh)_n$and$(Ph_2Si(CH_2)m)n;\;m=2∼4, n{\ge}10)$along with five- and six-membered silaalkane ring compounds derived from intramolecular hydrosilation reactions. All of the prepared compounds are confirmed by NMR, UV, IR and mass spectroscopy as well as elemental analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flirt without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_3$PLT (x=0.1) thin film having 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}$C/$\textrm{cm}^2$.K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03${\times}$$10^{-11}$/C.cm/J and 1.46 x $10^{-9}$C.cm/J, respectively. The PLT(10) thin film has voltage responsivity ($R_{V}$) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D＊) of the PLT(10) thin film are 9.93 x $10^{-8}$W/Hz$^{1/2}$ and 1.81 x $10^{6}$ cmHz$^{1/2}$/W at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.