• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1292-1300
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• 1996

In-site X-ray diffraction measurements under electric field up to 20kV/ cm were carried out on PLZT (x/70/30) with x=7.5, 8.0, 8.5, and 10.5 All of PLZT belonged to cubic phases. At x=7.5, 8.0 and 8.5 PLZT behaved as an antiferroelectric under low electric fields up to 4-8 kV/cm. PLZT became ferroelectric at the higher electric fields. The high-temperature measurements on the dielectric constants of PLZT with x=7.5, 8.0 and 8.5 showed that they were similar to relaxor ferroelectrics and underwent a diffuse phase transition from antiferroelectrics to paraelectrics at 50-7$0^{\circ}C$. Their P-E hysteresis curves confirmed that they were antifer-roelectrics. The broad distribution of Curie points suggests that there is a significant disorder of cations and vacances in the crystal structure of those PLZT due to La-substitution. The variation of the lattice strain of PLZT(10.5/70/30) with electic field was very small and did not show any hysteresis confirming that it was paraelectric. The degree of the electric-induced strain variation decreased as La doping increased. In PLZT(7.5/70/30) the intensity of 110 reflection changes sensitively by applying electric field. Some domains with polarization parallel to [110] appeared to be developed in the field-induced ferroelectric phase of the PLZT.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.512-520
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• 1998

PLZT(7.5/70/30) was initially a cubic phase having diffuse phase transition at high temperatures. Sn-sub-stitution for PLZT(7.5/70/30) underwent an irreversible phase transition from cubic to rhom-bohedral structure. However PLZTS(7.5/70/30/y=5 & 10) could be reversibly switched from paraelectric to ferroelectric phase under electric field without showing a significant change in crystal structure. With in-creasing the amount of Sn-substitution the P-E behaviors of the PLZTS became more antiferroelectric which was similar to the effect of La-substitution of PLZT. Our study may suggest that Sn-substitution ef-fectively weakens a formation of long-range order between polar Ti-or Zr- containing octahedra which greatly affects strain properties.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.28-31
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• 2000

In this paper, the effects of La addition of PLZT(x/30/70) thin films Prepared by sol-gel method are investigated for NVFRAM application. The tetragonality (c/a), the grain size, and the surface roughness of PLZT thin films decrease with an increase of La concentration. As the La concentration increases, the dielectric constants at 10 kHz increase from 450 to 600, while the loss tangent decrease from 0.075 to 0.025. Also, the leakage current density at 100kV/cm decrease from 5.83$\times$10$^{-7}$ to 1.38$\times$10$^{-7}$ 4/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$170kV/cm, the remanent polarization and the coercive field of PLZT thin films with La concentration from 0 to 10㏖％ decrease from 20.8 to 10.5 $\mu$C/cm and from 54.48 to 32.12kV/cm, respectively. After a fatigue measurement by applying 10$^{9}$ square pulses with $\pm$5V, the remanent polarizations of PLZT thin films with 0 and 10㏖％ La concentration decrease about 64 and 42 ％ from initial state. In the results of retention measurement after 10$^{5}$ s, PLZT thin films with 0 to 10mo1％ La concentration show that the remanent polarization is decreased about 43％ and 9％ from initial state, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.5
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• pp.1066-1072
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• 2005

The effects of La concentration in PLZT (z/30/70) thin film prepared by sol-gel method are investigated for the NVFRAM application. As the La concentration increases, the dielectric constants at 10 kHz increase from 450 to 600, while the loss tangent and the leakage current density at 100 kV/cm decrease from 0.075 to 0.025 and from $5.83{\times}10^{-7}\;to\;1.38{\times}10^{-7}\;A/cm^2,$ respectively. In the results of hysteresis loops measured at 175 kV/cm, the remanent polarization and the coercive field decrease from 20.8 to $10.5{\mu}C/cm^2$ and from 54.48 to 32.12 kV/cm, respectively, with the increase of La concentration from 0 to $10mol\%.$ After applying for $10^9$ cycles of square pulses with ${\pm}5V$ height, the remanent polarization of the PLZT (10/30/70) thin film decreases $40\%$ from the initial state, while that of the PLZT (10/30/70) thin film decreases $64\%.$.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.220-223
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• 1987

In this paper, electro-optic characteristics of PLZT 7.6/70/30 composition in MPB regions, which antiferroelectric and ferroelectric phases coexist together, were studied. As sintering times are increased, Curie temperatures ore linearly decreased. And the antiferroelectric phase becomes more stronger when Curie temperatures are decreased. The crystal structure investigated by lie of X-ray analysis is proved to cubic in the thermally depoled specimen and rhombohedral in the poled specimen. Accordingly, the applicability of 7.6/70/30 specimen as image storage and display device is expected by the method for applying field induced reversible transitions between antiferroelectric(AFE) and ferroelectric(FE) phase.