• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.1-1
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• 2001

비휘발성 메모리 소자로의 응용의 관점에서, sol-gel 방법으로 La 을 10mo1% 로 고정시킨 PLZT (10/y/z) 박막을 제작하여 Zr/Ti 조성비에 따른 구조적 및 전기적 특성을 조사하였다. PLZT(10/40/60) 박막은 로제트와 파이로클로르 상이 관찰되었으며, Zr/Ti 조성비에서 Ti 함유량이 증가함에 따라, (100) 배향성, 결정립 크기와 표면 거칠기는 증가되었다. 또한 Zr/Ti 조성비에서 Ti 함유량이 증가함에 따라, 10㎑ 에서 비유전율은 600 에서 400 으로 감소된 반면, 유전손실은 0.028 에서 0.053 로 증가되었으며, 170 ㎸/cm 에서 누설전류밀도는 1.64×$10^{-6}$ 에서 1.26×$10^{-7}$A/㎠ 으로 감소되었다. 그리고 ± 170㎸/㎝ 에서 측정한 PLZT 박막의 이력곡선을 측정한 결과, Zr/Ti 조성비가 40/60 에서 0/100 로 변화함에 따라 PLZT 박막의 잔류분극과 항전계는 6.62 에서 12.86 μC/cm2, 32.15 에서 56.45㎸/㎝ 로 각각 증가되었으며, 피로와 retention 특성 역시 개선되었다. PLZT 박막에 ±5V 의 사각펄스를 $10^9$ 회 인가하여 피로특성을 측정한 결과, PLZT(10/40/60) 박막의 잔류분극은 초기분극값으로부터 50% 감소된 반면, PLZT(10/0/100) 박막은 30% 감소되었다. 또, $10^5$ 초의 retention 결과에서 PLZT(10/0/100) 박막은 초기분극값에서 오직 11% 만이 감소된 반면, PLZT(10/40/60) 박막은 40% 감소되었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.609-615
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• 2005

The effects of Zr/Ti concentration ratio in PLZT (10/y/z) thin films prepared by sol-gel method are investigated for the NVFRAM application. As Ti amount of Zr/Ti concentration ratio increases, the dielectric constants at 10 kHz decrease from 550 to 400, while the loss tangents increase from 0.028 to 0.053 and the leakage current densities at 170 kV/cm decrease from $1.64\times10^{-6}$ to $1.26\times10^{-7}\;A/cm^2$. In the results of hysteresis loops measured at $\pm170kV/cm$, the remanent polarization and the coercive field increase from 6.62 to $12.86{\mu}C/cm^2$ and from 32.15 to 56.45 kV/cm, respectively, according to the change from 40/60 to 0/100 in Zr/Ti concentration ratio. Fatigue and retention properties also improve much as the Zr/Ti concentration ratio change from 40/60 to 0/100. After applying $10^9$ square pulses with $\pm5V$, the remanent polarization of the PLZT (10/40/60) thin film decreases $50\%$ from the initial state while that of the PLZT (10/0/100) thin film decreases $28\%$. In the results of retention measurements of 10s s, the remanent polarization of the PLZT (10/0/100) thin film dec.eases only $10\%$ from the initial state, while that of the PLZT (10/40/60) thin film decreases $40\%$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.313-322
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• 2001

The effects of Zr/Ti concentration ratio in PLZT (10/y/z) thin films prepared by sol-gel method are investigated for the NVFRAM application. Rosette and pyrochlore phase are observed in PLZT (10/40/60) thin film and the (100) orientation, the grain size, and the surface roughness of PLZT thin films increase due to the increase of Ti amount in Zr/Ti concentration ratio. As Ti amount of Zr/Ti concentration ratio increases, the dielectric constants at 10KHz decrease from 600 to 400, while the loss tangents increase from 0.028 to 0.053 and the leakage current densities at 170 kY/cm decrease from 1.64$\times$10$^{-6}$ to 1.26$\times$10$^{-7}$ A/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$ 170 ㎸/cm, the remanent polarization and the coercive field increase from 6.62 to 12.86 $\mu$C/$\textrm{cm}^2$ and from 32.15 to 56.45 ㎸/cm, respectively, according to the change from 40/60 to 0/100 in Zr/Ti concentration ratio. Fatigue and retention properties also improve much as the Zr/Ti concentration ratio change from 40/60 to 0/100. After applying 10$^{9}$ square pulses with $\pm$5V, the remanent polarization of the PLZT (10/40/60) thin film decreases 50％ from the initial state while that of the PLZT (10/0/100) thin film decreases 30％. In the results of retention measurements of 10$^{5}$ s, the remanent polarization of the PLZT (10/0/100) thin film decreases only 11％ from the initial state, while that of the PLZT (10/40/60) thin film decreases 40%.

• Journal of the Korean Ceramic Society
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• v.23 no.4
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• pp.62-68
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• 1986

$(Pb_{1-x} La_x)(Zr_{0.65} Ti_{0.35})_{1-x/4}O_3$ (PLZT X/65/35) powders were prepared by molten salt synthesis using NaCl-K Cl and conventional calcining of oxides. The effects of molten salt on formation and charactrization of PLZT powder and on dielectric piezolectric and optical properties of PLZT ceramics were studied, The completed PLZT powder formation in the presence of fused salt was attained at 50-10$0^{\circ}C$ lower temperature than that in solid state reaction and the particle size of the powder made by molten salt synthesis was markedly increased with increasing calcining temperature. The substitution of Na and/or K ions in NaCl-KCl for Pb ion in process of molten salt synthesis was increased with increasing La concentration Z. These substituted Na and/or K ions were identified as the origins of decreasing coupl-ing factor and optical transmittance of PLZT ceramics.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.668-673
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• 1996

In this paper, (P $b_{1-x}$ L $a_{x}$)(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ (X=0-13[at%]) thin film were prepared by the Sol-Gel method, Multiple PLZT thin films were spin-coated on the Pt/Ti/ $SiO_{2}$Si substrate. The electrical properties of the films were investigated for varying the annealing temperature. In the PLZT(11/52/48) specimens, the dielectric ocnstant of 1236 and the polarization reversal time of 460[nm] were obtained and the breakdown of the film did not occur up to 1*10$^{10}$ cycles at the voltage of 7[V] by the bipolar acceleration. The remanent polarization and coercive field decreased with increasing the content of La in the range of 0-13[at%] and thin film of the PLZT(11/52/48) showed the value of 2.56[.mu.C/c $m^{2}$] and 21.1[kV/cm], respectively.ly.y.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.5
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• pp.1066-1072
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• 2005

The effects of La concentration in PLZT (z/30/70) thin film prepared by sol-gel method are investigated for the NVFRAM application. As the La concentration increases, the dielectric constants at 10 kHz increase from 450 to 600, while the loss tangent and the leakage current density at 100 kV/cm decrease from 0.075 to 0.025 and from $5.83{\times}10^{-7}\;to\;1.38{\times}10^{-7}\;A/cm^2,$ respectively. In the results of hysteresis loops measured at 175 kV/cm, the remanent polarization and the coercive field decrease from 20.8 to $10.5{\mu}C/cm^2$ and from 54.48 to 32.12 kV/cm, respectively, with the increase of La concentration from 0 to $10mol\%.$ After applying for $10^9$ cycles of square pulses with ${\pm}5V$ height, the remanent polarization of the PLZT (10/30/70) thin film decreases $40\%$ from the initial state, while that of the PLZT (10/30/70) thin film decreases $64\%.$.

• Korean Journal of Materials Research
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• v.3 no.3
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• pp.261-271
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• 1993

Functionally Gradient Materials(FGM) of 4.5Pb($Ni_{1/3}Nb_{2/3})O_3$-55PZT and PLZT(lO/70 /30, 11/60/40) were prepared. Its dielectric and piezoelectric strain properties were investigated. The FGM were pressed into A/B/ A configuration using two kinds of films, one layer(A) was eliminated from FGM by polishing after sintering at $l250^{\circ}C$, 2 hrs. The acrylic binder system was successfully applied for crack free film through doctor blade method. The thickness of gradent layer in FGM was about 30${\mu}$m. Dielectric properties of FGM show the average value of each side layer. The strain-electric field characteristics of FGM were significantly improved comparison with the other single compositions. The prepared FGM piezoelectric actuator shows about 3${\mu}$m/IOOV displacement.