• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.43-48
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• 2024

The discovery of a two-dimensional electron gas (2DEG) at the interface of LaAlO₃ (LAO) and SrTiO₃ (STO) substrates has sparked significant interest, providing a foundation for cutting-edge research in electronic devices based on complex oxide heterostructures. However, conventional methods for producing LAO thin films, typically employing techniques like pulsed laser deposition (PLD) within physical vapor deposition (PVD), are associated with high costs and challenges in precisely controlling the La and Al composition within LAO. In this study, we adopted a cost-effective alternative approach-solution-based processing-to fabricate LAO thin films and investigated their electrical properties. By adjusting the concentration of the precursor solution, we varied the thickness of LAO films from 2 to 65 nm and determined the sheet resistance and carrier density for each thickness. After vacuum annealing, the sheet resistance of the conductive channel ranged from 0.015 to 0.020 Ω·s^-1, indicating that electron conduction occurs not only at the LAO/STO interface but also into the STO bulk region, consistent with previous studies. These findings demonstrate the successful formation and control of 2DEG through solution-based processing, offering the potential to reduce process costs and broaden the scope of applications in electronic device manufacturing.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.1757-1762
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• 2003

With distribution industrial control system, the use of low cost to achieve a highly reliable and safe system in real time distributed embedded application is proposed. This developed intelligent node is based on two microcontrollers, one for the execution of the application code, also as master controller for ensuring the real time control & the logic operation with PLD and other for communication task and the easy control execution, i.e., I/O digital input, digital output and interrupting. This paper also presents where the case NCS (Networked control system) with LonTalk protocol is applied for the filtration process control system of a small water treatment plant.

• Proceedings of the Korea Association of Information Systems Conference
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• 2005.05a
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• pp.258-265
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• 2005

유비쿼터스 사회의 도래로 모바일 비즈니스 서비스 수요의 증대와 다양한 사용자 요구사항 및 변경이 빈번해짐에 따라 소프트웨어의 특성을 적시에 반영할 수 있는 새로운 소프트웨어 개발 기술이 필수적이다. 소프트웨어 프로덕트 라인은 공통의 유사한 기능을 가지고 있는 소프트웨어 제품 혹은 소프트웨어 시스템 집합으로 특정 영역의 시장과 용도의 요구사항에 따라 재사용 가능한 아키텍처 및 컴포넌트를 구성함으로써 생산성과 품질을 향상시킬 수 있다. 특히, 시스템을 분할하고 구조화하여 시스템의 성능과 효율성을 향상시킬 수 있는 소프트웨어 아키텍처 개념이 중요시 되면서 아키텍처의 개발과 평가에 대한 체계적인 연구가 필요하다. 본 논문에서는 CBD (Component Based Development)를 기반한 소프트웨어 프로덕트 라인(PLD: Product Line based Development)을 도입하여 모바일 비즈니스 도메인에 적합한 모바일 응용 시스템 아키텍처(MASA: Mobile Application System Architecture)를 제시한다.

• Proceedings of the IEEK Conference
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• 2001.06a
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• pp.193-196
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• 2001

To reduce third-order intermodulation distortion(IMD3) generated in the down-conversion process of the mixer, predistortion technique was proposed and its performance was verified fDr Cellular band circuit. This method is based on the fact that down converted IMD3 of a down conversion mixer could be canceled by that of predistortor with a fine tuned vector modulator. Two tone test has been performed at 836 Mhz with 442 KHz separation. The results showed that IM3 level was improved about 16dB and PldB of the mixer was increased 3dB. from the above results, the suggested technique is useful to design the down converters for communication system .

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.129-132
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• 1996

Surface modification like cone formation on Pulsed laser deposition (PLD) occurs in YBCO target surface irradiated by laser beam. Cone formation results in a reduction of deposition rate, so that it is significant obstacles to an efficient deposition process. With the change of various conditions such as the number of laser shot, target density, direction of incoming laser beam, we have systematically analyzed the modification of target surface. Because cones formed by beam-target interactions grow in direction of incoming laser beam, we have used the method of rotating the target position by 180$^{\circ}$ with the same number and position of laser shot. Experimental results of losing the directionality and changing the shape of cones formed on laser irradiated YBCO target surface is obtained by the SEM image. Also, we have observed that the size of cones formed on target by pulsed laser became larger with increasing the number of laser shots.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1483-1484
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• 2000

Dielectric thin films of PLT(Pb(La.Ti)O3) for the application of highly integrated memory devices have been deposited on Pt/Ti/SiO2/Si substrates in situ by pulsed laser deposition(PLD). We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. Both in-situ annealing and ex-situ annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)$O_3$ films.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.153-156
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• 2007

Structural and electrical properties of the fully crystallized-bismuth magnesium niobate ($Bi_2Mg_{2/3}Nb_{4/3}O_7$, BMN) films with 15 mol% excess bismuth deposited on Pt bottom electrode by pulsed laser deposition are characterized for various deposition temperatures. The BMN films were crystallized with a monoclinic structure from $300^{\circ}C$ and the surface roughness slightly decreases with increasing deposition temperature. The capacitance density of the films increases with increasing deposition temperature and especially, films deposited at $400^{\circ}C$ exhibit a capacitance density of approximately $620nF/cm^2$. The crystallized BMN films with approximately 170 nm thickness exhibit breakdown strength above 600 kV/cm (${\leq}10V$) irrespective of deposition temperature and a leakage current density of approximately $2{\times}10^{-8}A/cm^2$ at 590kV/cm (at 10 V).

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2003.11a
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• pp.243-249
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• 2003

With distribution industrial control system, the use of tow cost to achieve a highly reliable and safe system in real time distributed embedded application is proposed. This developed intelligent node is based on two microcontrollers, one for the execution of the application code, also as master controller for ensuring the real time control & the logic operation with PLD and other for communication task and the easy control execution, i.e., I/O digital input, digital output and interrupting. This paper also presents where the case NCS(Networked control system) with LonTalk protocol is applied for the filtration process control system of a small water treatment plant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.41-43
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• 2004

Dielectric thin films of $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ were deposited on $Pt(111)/Ti/SiO_2/Si$ substrates in situ by pulsed laser deposition(PLD) and annealed with different gases which are forming gas and oxygen gas, respectively. The diffusion of hydrogen into the ferroelectric film was caused by annealing process and resulted in the destruction of polarization. The dielectric properties of forming gas annealed PLT thin films, which are dielectric constant, ferroelectric characteristic, and leakage current characteristics, were degraded

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.254-254
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• 2016

Tin dioxide (SnO2) thin film is one of the most important n-type semiconducting materials having a high transparency and chemical stability. Due to their favorable properties, it has been widely used as a base materials in the transparent conducting substrates, gas sensors, and other various electronic applications. Up to now, SnO2 thin film has been extensively studied by a various deposition techniques such as RF magnetron sputtering, sol-gel process, a solution process, pulsed laser deposition (PLD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) [1-6]. Among them, ALD or plasma-enhanced ALD (PEALD) has recently been focused in diverse applications due to its inherent capability for nanotechnologies. SnO2 thin films can be prepared by ALD or PEALD using halide precursors or using various metal-organic (MO) precursors. In the literature, there are many reports on the ALD and PEALD processes for depositing SnO2 thin films using MO precursors [7-8]. However, only ALD-SnO2 processes has been reported for halide precursors and PEALD-SnO2 process has not been reported yet. Herein, therefore, we report the first PEALD process of SnO2 thin films using SnCl4 and oxygen plasma. In this work, the growth kinetics of PEALD-SnO2 as well as their physical and chemical properties were systemically investigated. Moreover, some promising applications of this process will be shown at the end of presentation.