• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.399-402
• /
• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.4
• /
• pp.170-173
• /
• 2010

Nanocrystalline cadmium sulfide (CdS) thin films were prepared using chemical bath deposition in a solution bath containing $CdSO_4$, $SC(NH_2)_2$, and $NH_4OH$. The CdS thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL), and Fourier transform infrared spectroscopy (FTIR). The as-deposited CdS thin film prepared at $80^{\circ}C$ for 60 min had a cubic phase with homogeneous and small grains. In the PL spectrum of the 2,900 A-thick CdS thin film, the broad red band around 1.7 eV and the broad high-energy band around 2.7 eV are attributed to the S vacancy and the band-to-band transition, respectively. As the deposition time increases to over 90 min, the PL intensity from the band-to-band transition significantly increases. The temperature dependence of the PL intensity for the CdS thin films was studied from 16 to 300 K. The $E_A$ and $E_B$ activation energies are obtained by fitting the temperature dependence of the PL intensity. The $E_A$ and $E_B$ are caused by the deep trap and shallow surface traps, respectively. From the FTIR analysis of the CdS thin films, a broad absorption band of the OH stretching vibration in the range $3,000-3,600\;cm^{-1}$ and the peak of the CN stretching vibration at $2,000\;cm^{-1}$ were found.

• Korean Journal of Materials Research
• /
• v.8 no.6
• /
• pp.526-531
• /
• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.9
• /
• pp.2910-2916
• /
• 2012

Cadmium sulphide (CdS) nanorods were prepared by a single precursor thermal decomposition (SPTD) method. The formation of CdS nanorods and their structure, morphology and elemental composition were studied by means of FT-IR, XRD, FE-SEM, HR-TEM and EDAX analysis. Photoluminescence (PL) and lifetime measurements were recorded to study the luminescence properties of the material. The PL spectrum of the CdS nanorods showed one broad peak and four shoulders and the cause for this emission was discussed. The PL emissions from the band edge and deep trap state of the CdS nanorods were studied by lifetime measurements. Further, the synthesized CdS nanorods showed an increase in efficiency of photocatalytic degradation of methylene blue (MB) and rhodamine B (RhB). The increase in the photocatalytic activity was attributed to the mixed phase of the CdS nanorods.

• Journal of Advanced Marine Engineering and Technology
• /
• v.30 no.1
• /
• pp.176-181
• /
• 2006

In this study, systematical investigations were carried out on crystal qualifies and optical properties of $ZnSe_{1-x}:Te_x$ (x=0.002-0.04) thin films frown by molecular beam epitaxy (MBE). The crystal qualifies and optical properties have been investigated by X-ray diffraction (XRD) and Photoluminescence (PL) measurements, respectively. From the XRD measurements, the crystallographic characteristics showed mediocre crystal quality with increasing the Te composition. From the PL measurements, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSe:Te epilayers. The efficient blue and green emission were attributed to the recombination of excitons trapped at isoelectronic isolated a single Te atom and $Te_n(n{\geq}2)$ clusters. respectively. The blue emission become dominant in Te tightly doped $ZnSe_{1-x}:Te_x$ $(Te=0.2\%)$ epilayers with increasing temperature. For the Te heavily doping condition $(Te=4.0\%)$, the dominant green emission could be observed at around 160K.

• Korean Journal of Materials Research
• /
• v.15 no.5
• /
• pp.293-300
• /
• 2005

ZnO:Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO:Li sintered pellet was irradiated by the ArF (193 nm) excimer laser. The growth temperature was fixed at $400^{\circ}C$. The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of epilayers measured by van der Pauw-Hall method are $2.69\times10cm^{-3}$ and $52.137cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of epilayers obtained from the absorption spectra is well described by the Varshni's relation, $E_g(T)=3.5128eV{\cdot}(9.51\times10^{-4}eV/K)T^2/(T+280K)$. After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li has been investigated by PL at 10 K. The Peaks of native defects of $V_{zn},\;V_o,\;Zn_{int},\;and\;O_{int}$ showned on PL spectrum are classified as a donors or accepters type. We confirm that $ZnO:Li/Al_2O_3$ in vacuum do not form the native defects because ZnO:Li epilayers in vacuum existe in the form of stable bonds.

• Journal of the Korean Ceramic Society
• /
• v.51 no.1
• /
• pp.25-31
• /
• 2014

New green phosphor is synthesized by reducing $LiAlO_2:xEu^{3+}$ phosphors in a low pressure $H_2$ atmosphere. The $LiAlO_2:xEu^{3+}$ prepared by a solid state reaction method is reported as red phosphor. The effect of the reduction treatment on the $LiAlO_2:xEu^{3+}$ on the crystalline phase change and photoluminescence (PL) property are characterized. The reduced phosphor had a broad green light spectrum centered at 524 nm. The PL intensity of the reduced phosphor increased to a maximum at the reduction temperature of $1100^{\circ}C$. The PL intensity decreased with a further increase in the reduction temperature. The crystalline phase constituting the reduced phosphor varied with the temperature. A new crystalline phase $Li_2Al_4O_7$ was observed at $1100^{\circ}C$. The origin of the green-light emission is discussed in relation to the crystalline phase change.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.282-282
• /
• 2012

본 연구에서 SiOC 박막을 제작하기 위해서 RF 마그네트론 스퍼터링법을 이용하여 유량별 RF 파워의 변화에 따라서 AZO 박막을 성장시켰으며 박막의 광학적 특성을 조사하였고 투명 전도성 박막으로써 AZO 박막을 SiOC 박막 위에 성장시켜서 광학적인 특성을 조사하였다. Si 웨이퍼의 종류에 따라서 광학적인 특성에 조금의 변화가 있는 것을 확인하였으며, n-type Si의 경우 electron transition에 의한 emission 특성이 달라지는 것에 비하여 상대적으로 p-type Si의 경우 변화가 거의 없는 것으로 나타났다. 일반적으로 사용되는 SiO2 산화막 위에 증착한 AZO 박막에 비하여 SiOC 박막 위에 증착할 경우 빛의 흡수가 많이 일어나는 것을 확인할 수 있었으며, AZO/SiOC 박막의 반사도 역시 많이 감소하였으며, 이러한 전기적인 특성은 태양전지에서 전면전극으로 사용할 경우 반사방지막으로서의 특징도 나타낸다는 것을 의미한다. 스퍼터 방법에 의한 증착법은 낮은 온도에서도 공정이 가능하다는 장점이 있으며, 절연특성이 우수한 SiOC 박막을 AZO 박막의 보호막으로 사용할 경우 용도에 따라서 우수한 특성을 나타낼 수 있음을 확인하였다.

• Journal of Advanced Marine Engineering and Technology
• /
• v.29 no.7
• /
• pp.795-800
• /
• 2005

The optical properties of $ZnS_{y}Se_{1-x-y}:Te_x\;(x\;<\;0.08,\;y\∼0.11$) alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_{1}$Tel and $Te_{n}$ (n$\geq$2) cluster bound excitons, respectively. Bright blue (462 nm) and green (535 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer.

• Rapid Communication in Photoscience
• /
• v.4 no.4
• /
• pp.76-78
• /
• 2015

We report on the photoluminescence (PL) properties of poly[2,7-(9-9-dioctylfluorene)] (PF) thin film under strong optical pumping using a streak camera system. When the excitation energy density increases above $72{\mu}J{\cdot}cm^{-2}$, the emission spectrum becomes narrower and PL decay curve comes to be faster simultaneously. These behaviors are clear evidence of Amplified Spontaneous Emission (ASE) due to a waveguided Stimulated Emission in slab structure of thin film. ASE threshold of $72{\mu}J{\cdot}cm^{-2}$ is comparable with previous reports and PF is attractive as a gain medium for plastic lasers.