• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.1
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• pp.58-67
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• 1992

Optical absorption and photoluminescences(PL) of MgGa2Se4 and MgGa2Se4 : Co2+ single crustals were guown by the Bridgman method have been investigated in the visible and near-in frared regions. The optical absorption spectrum showed three absorption peak at 760 nm(13158nm, -1, 1.63eV), 1640nm(6097cm-1, 0.75eV).and 2500nm(4000cm-1,0.49eV) which are assigned the electronic transitions between the ground state and excited states of Co2+ ions with Td sym-metry in MgGa2Se4 host lattice. In PL spectrum the visible emission bands as well as the infrared emission band in these single cuystals are obserned. The visible emission bands are explained due to the radiative transitions of electrons from quasi continusly distributed tarps below the bottom of the conduction band to acceptor levels above the top of the valence band in the proposed energy level scheme. At the same time, it is considered that the infrated emission bands are attributed to electron transitions from the deep levels to the acceptor levels. The mechanism of the optical transition os well explained in terms of the energy diagram of MgGa2Se4.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.207-207
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• 2008

ZnO is one of the widely utilized n-type semiconducting oxide materials in the field of optoelectronic devices. For its application to the fabrication of promising ultraviolet (UV) photodetectors, ZnO with various structures has been extensively studied. However, study on the photodetectors using zero-dimensional (0-D) ZnO nanoparticle is scarce while the 0-D nanoparticle structure has many advantages compared to the other dimensional structures for absorption of light. In this study, the photocurrent characteristics of ZnO nanoparticles were investigated through a simply pasting of the nanoparticles across the pre-patterned electrodes. Then the photoluminescence (PL) characteristic, photocurrent response spectrum, photo- and dark-current and photoresponse spectrum were investigated with a He-Cd laser and an Xe lamp. An dominant PL peak of the ZnO nanoparticles was located at the wavelength of 380 nm under the illumination of 325-nm wavelength light. The ratio of photocurrent to dark current (on/off ratio) is as high as 106 which is considerable value for promising photodetectors. On the other hand, the time constants in photoresponse were relatively slow. The reasons of the high on/off ratio and relatively slow photoresponse characteristic will be discussed.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.275-280
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• 2003

Epitaxial Gd$_2O_3:Eu^{3+}$luminescent thin films have been grout on Si(III) substrates using ionized Cluster Beam Deposition (ICBD). After the film growing, they were implanted and post annealed to change the crystal structure. The initial growth stage was monitored by using in-situ Reflection High Energy Electron Diffraction (RHEED). The formed crystal structure was identified with X-ray diffraction (XRD) technique and Fourier transform infrared (FT-R) spectroscopy. The electronic states variations were investigated by Near Edge X-ray Absorption Fine Structure (NEXAFS). Photoluminescence (PL), Cathodoluminescence (CL). and Vacuum ultraviolet (VUV) spectrum were used for examining the optical properties. We report the optical property changes depending on crystal structure and the electronic states.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.453-453
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• 2010

In this study, zinc germanate ($Zn_2GeO_4$) thin films has been synthesized by using radio frequency magnetron sputtering and the divalent manganese-activated luminescence was characterized. X-ray diffraction patterns of the as-deposited $Zn_2GeO_4$:Mn films showed only a broad feature, indicative of an amorphous structure. Scanning electron microscopy images revealed that the as-deposited $Zn_2GeO_4$:Mn has a smooth surface morphology. The $Zn_2GeO_4$:Mn films were found to be crystallized by annealing in air ambient at temperatures as low as $700^{\circ}C$. The annealed $Zn_2GeO_4$:Mn possessed a rhombohedral polycrystalline structure. The broad-band photoluminescent emission spectrum from 470 to 650nm was obtained at room temperature from the $Zn_2GeO_4$:Mn films. The emission peak was centered at around 535nm in the green range, which originates from the intrashell transition of manganese $3d^5$ electrons from $^4T_1$ excited-state level to the $^6A_1$ ground state. The PL emission spectrum had an asymmetric line shape, which results from the $^3d_5$ electron transitions of divalent manganese ions located at different sites of the zinc germanate host crystal lattice. Electroluminescent devices were fabricated using $Zn_2GeO_4$:Mn as an emission layer. The fabricated devices showed a green EL emission similar to the PL emission. The CIE chromaticity color coordinates of the EL emission were determined to be x=0.308 and y=0.657.

• Journal of the Korean Vacuum Society
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• v.16 no.1
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• pp.27-32
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• 2007

We have investigated photoluminescence(PL) spectra of four $In_xGa_{1-x}N(x=0.15)/GaN$ multiple quantum well(MQW) structures with different well widths in order to study a phenomenon on crystal phase separation. The asymmetic behavior of PL spectra becomes stronger with increase of the well width from 1.5 nm to 6.0 nm, which indicates dual-peak nature. Analyzing the dual-peak fit PL spectra, we have observed that the intensity of low-energy shoulder peak rapidly becomes stronger, compared to that of high-energy peak corresponding to a transition in InGaN QW. It suggests that InGaN QW has two phases with tiny different In compositions, and that In-rich(InN-like) phase forms more and more relatively than stoichiometric InGaN(x=0.15) phase by the InN phase separation mechanism as the QW width increases. PL spectrum of 6.0-nm sample shows an additional peak at low-energy lesion(${\sim}2.0\;eV$) whose energy position is almost the same as a defect band of yellow luminescence frequently observed in GaN epilayers. It may be due to a defect resulted from In deficiency formed with development of the phase separation.

• Journal of the Korean Chemical Society
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• v.53 no.6
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• pp.677-682
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• 2009

ZnS:Mn/ZnS core-shell quantum dots (QDs), were synthesized via a thermal decomposition reaction of organometallic precursors in a hot solvent mixture. The synthetic conditions of the quantum dots were monitored at various reaction temperatures for the core formation, while the shell formation temperature was fixed at 135$^{\circ}C$. The obtained colloidal nanocrystals at corresponding temperatures were characterized by UV-Vis, solution photoluminescence (PL) spectroscopies, and further obtained powders were characterized by XRD, HR-TEM, and EDXS analyses. The synthetic temperature condition to obtain the best PL emission intensity for the core-shell QD was 135$^{\circ}C$, for both core and shell formation. At this temperature, solution PL spectrum showed a narrow emission peak at 583 nm with a relative PL quantum efficiency of 42.15%. In addition, the measured spherical particle sizes for the ZnS:Mn/ZnS nanocrystals via HR-TEM were in the range of 4.0 to 5.4 nm, while ellipsoidal particles were obtained at 150$^{\circ}C$.

• Clean Technology
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• v.25 no.2
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• pp.123-128
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• 2019

$Bi_2MoO_6$ catalysts were successfully synthesized using ethylene glycol monomethyl ether (EGME), glycerol (GL), ethylene glycol (EG), and water as solvents by a conventional hydrothermal method. The synthesized catalysts were characterized by XRD, DRS, BET, SEM, and PL, and we also investigated the photocatalytic activity of these materials for the decomposition of Rhodamin B under visible light irradiation. The XRD results revealed the successful synthesis of 12-18 nm, well-crystallized ${\gamma}-Bi_2MoO_6$ crystals with an Aurivillius structure regardless of solvent. In addition, the $Bi_2MoO_6$ catalysts prepared below $140^{\circ}C$ showed an amorphous phase; however, those prepared above $160^{\circ}C$ showed well-crystallized ${\gamma}-Bi_2MoO_6$ crystals. All the catalysts have a similar absorption spectrum from the ultraviolet region up to the visible region less than 470 nm. This result suggests that all the $Bi_2MoO_6$ catalysts are potential visible-light-driven photocatalysts. The $Bi_2MoO_6$ catalysts prepared using EGME as a solvent showed the highest photocatalytic activity. In addition, the $Bi_2MoO_6$ catalysts prepared at $180^{\circ}C$ showed the highest photocatalytic activity. The PL peaks appeared at about 560 nm at all catalysts and the excitonic PL signal was proportional to the photocatalytic activity for the decomposition of Rhodamin B. This suggests that the stronger the PL intensity, the larger the amount of oxygen vacancies and defects, and the higher the photocatalytic activity.

• Journal of Bio-Environment Control
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• v.27 no.4
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• pp.400-406
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• 2018

In this experiment the effect of supplemental lighting on the growth and yield of cucumber (Cucumis sativus L. 'Fresh') plants during low radiation period of winter season were investigated in glasshouses using common high-pressure sodium (HPS) lamps and newly developed plasma lighting system (PLS) lamps. Plants grown without supplemental lighting were considered as a control. Supplemental lighting was provided from November 20th, 2015 to March 15th, 2016 to ensure 14-hour photoperiod (natural+supplemental light), also lamps were operated automatically when the outside sun radiation levels were less than $100W{\cdot}m^{-2}$. Spectral analysis showed that HPS lamp had a discrete spectrum, lacked of the radiation in the 400-550 nm wave band (blue-green light), but had a high output in the orange-red region (550-650 nm). A higher red light output resulted in an increased red to far-red (R/FR) ratio in HPS lamp. PLS had a continuous spectrum and had a peak radiation in green region (490-550 nm). HPS has 12.6% lower output in photosynthetically active radiation (PAR) but 12.6% higher output in near infra-red (NIR) spectral regions compared to PLS. Both HPS and PLS lamps emitted very low levels of ultra-violet radiation (300-400 nm). Supplemental lighting both from HPS and PLS lamps increased plant height, leaf number, internode number and dry weight of cucumber plants compared to control. Photosynthetic activity of cucumber plants grown under two supplemental lighting systems was comparable. Number of fruits per cucumber plant (fruit weight per plant) in control, PLS, and HPS plots were 21.2 (2.9 kg), 38.7 (5.5 kg), and 40.4 (5.6 kg), respectively, thereby increasing yield by 1.8-1.9 times in comparison with control. An analysis of the economic feasibility of supplemental lighting in cucumber cultivation showed that considering lamp installation and electricity costs the income from supplemental lighting increased by 37% and 62% for PLS and HPS lamps, respectively.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.449-455
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• 2011

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.4}Al_{0.6}As$ buffer layer have been investigated by using photoluminescence (PL) and time-resolved PL measurements. A 1-${\mu}m$-thick $In_{0.4}Al_{0.6}As$ buffer layers were deposited at various temperatures from $320^{\circ}C$ to $580^{\circ}C$ on a 500-nm-thick GaAs layer, and then 1-${\mu}m$-thick $In_{0.5}Al_{0.5}As$ layers were deposited at $480^{\circ}C$, followed by the deposition of the InGaAs/InAlAs MQWs. In order to study the effects of $In_{0.4}Al_{0.6}As$ layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of $In_{0.4}Al_{0.6}As$ buffer layer. The MQWs consist of three $In_{0.5}Al_{0.5}As$ wells with different well thicknesses (2.5-nm, 4.0-nm, and 6.0-nm-thick) and 10-nm-thick $In_{0.5}Al_{0.5}As$ barriers. The PL peaks from 4-nm QW and 6-nm QW were observed. However, for the MQWs on the $In_{0.4}Al_{0.6}As$ layer grown by using the largest growth temperature variation (320-$580^{\circ}C$), the PL spectrum only showed a PL peak from 6-nm QW. The carrier decay times in the 4-nm QW and 6-nm QW were measured from the emission wavelength dependence of PL decay. These results indicated that the growth temperatures of $In_{0.4}Al_{0.6}As$ layer affect the optical properties of the MQWs.

• Journal of the Korean Ceramic Society
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• v.49 no.3
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• pp.221-225
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• 2012

It is possible to enhance the color of the natural diamond with a high pressure high temperature(HPHT) process. We employed a pyrophyllite tube cell and cubic press apparatus for HPHT treatment on the brown colored Type II (5.6 GPa/ $1700^{\circ}C$/ 52 min), and Type I aB(5.6 GPa/ $1650^{\circ}C$/ 30 min) diamond samples. We investigated the microstructure, Types, fluorescence, properties of the diamonds with an optical microscopy, FT-IR, photoluminescence(PL) spectroscopy, Diamond-View, and micro-Raman spectroscopy. Two tinted brown diamonds changed into colorless just after the HPHT process. Optical microscopy showed that no crack and significant inclusion evolution occurred during the HPHT process except the small graphite spot appeared in Type I aB sample. FTIR spectrum confirmed that no Type, amber center, and platelet defect change with the HPHT treatment. Diamond-View could not distinguish the HPHT treated diamonds from the naturals. PL spectroscopy showed that N3 and H3 color centers remained even after HPHT process. Consequently, we successfully changed the color of diamonds into colorless by 5.6 GPa HPHT process.