• Applied Chemistry for Engineering
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• v.22 no.4
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• pp.348-352
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• 2011

In this research, we have synthesized new pendant-type polyurethane polymers by introducing various chromophores with stilbene derivatives in the side-chain of the polymer backbone. The Stilbene monomers, N,N-bis(2-hydroxyethyl) amino-4'-cyanostilbene, N,N-bis(2-hydroxyethyl)amino-4'-methoxy stilbene, N,N-bis(2-hydroxyethyl)amino-4'-acetylstilbene, and N,N-bis(2-hydroxyethyl) amino stilbene, were synthesized by Wittig reaction. Another stilbene monomer, N,N-bis(2-hydroxyethyl)amino-4'-nitrostilbene, was synthesized by Knoevenagel condensation. By the measurement of UV-Vis absorption and Photoluminescence (PL) spectrum, we found that introduction of the electron-withdrawing group as a substituent shifts both UV-Vis and PL spectra to longer wavelength, and the introduction of the electron-donating group results in blue-shift of the spectrum. In case of polymer with $NO_2$ group as a substituent, PL is quenched.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.474-480
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• 2009

We have investigated optical properties of InAs quantum dots (QDs) grown on GaAs (100) substrate by molecular beam epitaxy, by means of photoluminescence (PL) and time-resolved PL spectroscopy. InAs QDs were grown by using In interruption growth technique, in which the In flux was periodically interrupted by a closed In shutter during InAs QDs growth. The shutter of In source was opened for 1 s and then closed for 0, 9, 19, 29, or 39 s. This growth sequence was repeated 30 times during QDs growth. For each sample, the total amount of In contributing to the growth was the same (30 s) but total growth time was varied during the InAs growth. As the In interruption time is increased from 0 to 19 s, the PL peak position of the QDs is red-shifted from 1096 to 1198 nm, and the PL intensity is increased. However, the PL peak is unchanged and the intensity is decreased as the In interruption time is increased further to 39 s. The PL decay times measured at the PL peak position for all the InAs QDs are independent on the QD growth conditions and showed about 1 ns. The red-shift of PL peak and the increase of PL intensity can be explained due to increased QD size and the enhancement in the migration of In atoms using In interruption technique. These results indicated that the size and shape of InAs QDs can be controlled by using In interruption growth technique. Thus the emission wavelength of the InAs QDs on GaAs substrate can also be controlled.

• Journal of the Korean Ceramic Society
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• v.36 no.3
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• pp.319-324
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• 1999

기존의 고상 반응법에 의해 합성된 YNbO4 : Bi 형광체의 발광특성을 개선하기 위하여 B2O3 융체 첨가법으로 형광체를 합성하고, 빛발광(PL) 및 저전압 음극선발광(CL)을 측정하였다. PL 및 CL 모두 415~440 nm 영역에서 강한 청색 발광 스펙트럼을 나타냈으며, 고상 반응의 경우와 마찬가지로 Y/Nb 비율이 화학 양론상의 1:1인 경우보다 결함구조를 인위적으로 조절한 51/49나 54/46에서 최대의 발광강도를 보였다. 한편, 고상 반응에서는 125$0^{\circ}C$에서 4시간 열처리하는 것이 최대의 발광효과를 나타냈으나, B2O3융제를 첨가하고 110$0^{\circ}C$에서 열처리한 시료가 결정성이 좋고 입자의 크기 및 형태가 균일하여 PL뿐만 아니라 CL에서도 우수한 발광특성을 보였다. B2O3융제를 첨가하는 방법으로 열처리 온도를 낮추고 입자크기와 형태를 조절하여 형광체의 휘도를 개선할 수 있었다.

• Journal of the Microelectronics and Packaging Society
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• v.4 no.2
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• pp.71-78
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• 1997

본 논문에서는 InGaAsP 에피막에서 도핑 농도와 에피막의 미세조직구조가 photoluminescence (PL) 스펙트럼의 위치 및 형상에 어떤 영향을 미치는가를 연구하였고, 그 결과를 설명하기 위해 가능한 모델을 제시하였다. InGaAsP 에피막(발진파장 ~1.3$\mu$m) 을 액상증착법(liquid phase epitaxy, LPE)으로 성장하여 9K에서 PL측정을 했을 때 InGaAsP 활성층 내 Zn 억셉터의 유무에 따라 PL 피크의 위치가 최대 30nm (24meV)까지 shift하고 피크의 선폭도 넓어지는 현사을 발견하였다. 이와같은 피크 분산현상은 inGaAsP 에피막이 유기금속 기상증착법으로 성장되거나 Zn로 고농도로 도핑되거나 고온에서 어닐링 될 경우 대폭 감소하였다. 이를 설명하기 위해 여러 가지 모델을 설정하여 실험을 하였으며 이 중 InGaAsP 에피막의 미세조직구조 특히 Spinodal 분해에 의한 조성이 모듈레이션과 Zn의 상호작용의 관계가 이 현상을 설명하는 데 가장 적절하다는 것을 밝혔다.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.342-342
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• 2008

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.308-313
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• 2006

We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under the various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.318-324
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• 2007

We report on a strong violet luminescence emitted from the ZnO:Al films grown on glass substrate by radio-frequency magnetron sputtering. The growth of high-quality thin films and their optical properties are controlled by adjusting the mixture ratio of Ar and $O_2$, which is used as the sputtering gas. The crystallinity of the films is improved as the oxygen flow ratio is decreased, as evidenced in both x-ray diffractometer and atomic force microscope measurements. As for the violet luminescence measured by photoluminescence (PL) spectroscopy, the peak energy and intensity of the PL signal are decreased with increasing the oxygen flow ratio. The peak energy of the violet PL spectrum for the thin film with an oxygen flow ratio of 50 % is almost constant, regardless of the increase of laser Power and temperature. These results indicate that the violet PL signal is probably due to defects related to interstitial Zn atoms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.157-159
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• 2005

본 연구에서는 저온 액상반응법을 이용하여 활성제 Eu의 농도를 10wt%로 도핑하고 열처리를 각각 450, 700, $900^{\circ}C$로 1h 유지하여 $Gd_2O_3:Eu^{3+}$ 나노형광체를 합성하였다. 제조된 형광체의 결정화, 입자크기를 XRD, BET로 분석하였고, 이들이 발광 휘도에 미치는 영향을 확인하였다. 또한 합성된 형광체의 PL(photoluminescence) 특성을 알아보기 위해 여기파장 254nm 의한 발광스펙트럼, 611nm에 의한 여기스펙트럼을 조사하였다. 발광 특성은 611nm에서 주 peak을 갖는 $Eu^{3+}$ 이온에 의한 $^5D_0-^7F_{J(J=0,1,2)}$ 전이에 기인된 전형적인 Red 형광체의 특성을 나타냈고, 입자크기는 평균 20-60nm 정도이고, 발광강도는 열처리 온도가 증가함에 따라 향상되었다.

• Applied Chemistry for Engineering
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• v.16 no.6
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• pp.755-759
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• 2005

This study was based on organic electroluminescence display. Especially, DPAVBi, AVBi and DPVBi for the emitting materials were synthesized by Wittig, Wittig-Horner reaction. This reaction was conducted between phosphorous ylide and 4-(diphenylamino)benzaldehyde, 9-anthraldehyde and benzophenone. The structural property of reaction products were analyzed by FT-IR, $^1H-NMR$ spectroscopy and thermal stability, reactivity and PL property were analyzed by melting point, yield and emission spectrum, respectvely. The photoluminescence spectra of a pure DPAVBi, AVBi and DPVBi were observed at approximately 445nm, 484nm and 450nm, respectively. In this study, it was known that DPAVBi, AVBi, DPVBi had a different reaction properties according to stability of ${\alpha}$-position carbonyl group of the aldehyde, ketone.

• Polymer(Korea)
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• v.25 no.3
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• pp.399-405
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• 2001

Poly[3-octylthiophene-co-3-(4-fluorophenyl)thiophene]s were synthesized in 2:1, 1:1, and 1:2 mole ratios, and organic electroluminescent devices were fabricated using the copolymers. The opto-electrical properties of the copolymers were studied by PL, EL spectra, I-V, and V-L curves of the organic electroluminescent devices in conjunction with the energy band diagrams which were obtained from the cyclic voltammogram and the electronic absorption spectra. The LUMO energy level of P(OT/FPT)(1:1) is the lowest as -3.35 eV. In the copolymers P(OT/FPT)(2:1) and P(OT/FPT)(1:1) the ${\lambada}_{max}$ in the PL and EL spectra red-shifted as the mole ratio of fluorophenyl group increased while in P(OT/FPT)(1:2) it showed a blue-shift. This indicates that the backbone chain is twisted due to the steric hinderance of the fluorophenyl group leading to shorter ${\pi}$-conjugation length. P(OT/FPT)(1:1) showed the highest EL intensity and the highest power efficiency among the three copolymers. In P(OT/FPT)(1:2) the roughness of the film surface causes unusually high local leakage current leading to the low efficiency of electroluminescence.