• 폴리머
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• 제34권4호
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• pp.376-380
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• 2010

분자내 전하이동(intramolecular charge transfer, ICT)이 가능한 도너-$\pi$-억셉터(D-$\pi$-A)타입의 발색단 을 근간으로 한 폴리머를 신규 합성하였다. 이 폴리머는 UV-visible spectra 측정결과 용액 상태에서 뿐만 아니라 고체박막 상태에서도 카르보닐기(carbonyl group)에서 기인하는 흡수와 함께 ICT에 의한 장파장 영역에서의 흡수가 관 찰되었다. $Eu^{3+}$ 이온의 첨가에 의해 장파장영역에서 일어나는 흡수의 적색이동(red shift)을 유도하였으며, 더불어 용 액과 박막의 색상도 황색에서 적색으로 변화하는 것이 관찰되었다. 합성된 고분자의 형태 및 유기 용매에 대한 용해도 는 가교제의 함량에 따라 다양한 특성을 나타내었다. 또한, 첨가된 가교제의 함량과 $Eu^{3+}$ 이온의 첨가는 성막 특성의 향상을 유도하였다.

• Journal of Magnetics
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• 제12권1호
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• pp.27-30
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• 2007

Experimental evidence suggests that spin pinning conditions for standing spin mode in polycrystalline $Ni_{84}Fe_{16}$ alloy film, is confirmed using the four categories of Camley et al. and the value of q$\bot$ for the pinning conditions, this was achieved by performing Brillouin light scattering measurements. The value of q$\bot$ was observed, in order to increase at a rate of $\pi$/2 with an increasing mode number. With this condition, the coexistence of standing spin wave modes was shown, with intermediate pinning, in addition to free and strong pinning. The values for spin-wave-stiffness constant ($D_B$), g-factor (g), and surface magnetization (4$\pi$M) of the Permalloy film were obtained from the results of BLS, and determined to be $D_B=1.85{\pm}0.05Oecm^2$, $g=2.11{\pm}0.02$, and 4$\pi$M=8.7 kG, respectively.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.709-710
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• 2010

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 추계학술대회 논문집
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• pp.415-416
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• 2010

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.9-10
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• 2000

The wide viewing angle and fast response time characteristics of negative dielectric anisotropy nematic liquid crystal (NLC) using a novel vertical-alignment (VA) - 1/4 ${\pi}$ cell mode on a homeotropic alignment layer were investigated. Good voltage-transmittance curves and low driving voltage using the novel VA - 1/4 ${\pi}$ cell mode without a negative compensation film were obtained. The iso-viewing angle characteristics of NLC using the novel VA - 1/4 ${\pi}$ cell mode without a negative compensation film can be achieved. The fast response time of 24.4 ms in NLC was successfully measured. The iso-viewing angle, fast response time, and low driving voltage characteristics using the novel VA - 1/4 ${\pi}$ cell mode can be achieved.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.374-374
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• 2010

Charge transfer mechanism of poly(4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (TP6F PI) which exhibits bistable ON and OFF switching has been studied using photoemission electron spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS). Here, we demonstrate novel set-up in which holes are injected by photoemission process instead of direct charge carrier injection via metal electrode. The accumulated charges on the PI surface in the OFF state abruptly flow across the PI film when the bias voltage of a back electrode reaches a specific value, indicating that the film is changed to the ON state. Core level and x-ray absorption spectra probed at charge injection region via photoemission process do not show any evidences implying structural modification of TP6F PI during the phase change. Whereas, in valence band spectra, the highest occupied molecular orbital (HOMO) is shifted toward Fermi level, responsible for improved hole-mobility of TP6F PI of ON state.

• 한국광학회:학술대회논문집
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• 한국광학회 1998년도 제15회 광학 및 양자전자 학술발표회 논문집
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• pp.146-147
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• 1998

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1009-1013
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• 2009

In this study, we have been synthesized the dielectric layer using pure organic and organic-inorganic hybrid precursor on flexible substrate for improving of the organic thin film transistors (OTFTs) and, design and fabrication of organic thin-film transistors (OTFTs) using small-molecule organic semiconductors with pentacene as the active layer with record device performance. In this work OTFT test structures fabricated on polymerized substrates were utilized to provide a convenient substrate, gate contact, and gate insulator for the processing and characterization of organic materials and their transistors. By an adhesion development between gate metal and PI substrate, a PI film was treated using $O_2$ and $N_2$ gas. The best peel strength of PI film is 109.07 gf/mm. Also, we have studied the electric characteristics of pentacene field-effect transistors with the polymer gate-dielectrics such as cyclohexane and hybrid (cyclohexane+TEOS). The transistors with cyclohexane gate-dielectric has higher field-effect mobility, $\mu_{FET}=0.84\;cm^2/v_s$, and smaller threshold voltage, $V_T=-6.8\;V$, compared with the transistor with hybrid gate-dielectric.

• 대한수학회지
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• 제47권5호
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• pp.967-983
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• 2010

Let M be an n-dimensional complete simply connected Riemannian manifold with sectional curvature bounded above by a nonpositive constant $-{\kappa}^2$. Using the cone total curvature TC($\Gamma$) of a graph $\Gamma$ which was introduced by Gulliver and Yamada [8], we prove that the density at any point of a soap film-like surface $\Sigma$ spanning a graph $\Gamma\;\subset\;M$ is less than or equal to $\frac{1}{2\pi}\{TC(\Gamma)-{\kappa}^2Area(p{\times}\Gamma)\}$. From this density estimate we obtain the regularity theorems for soap film-like surfaces spanning graphs with small total curvature. In particular, when n = 3, this density estimate implies that if $TC(\Gamma)$ < $3.649{\pi}\;+\;{\kappa}^2\inf\limits_{p{\in}F}Area(p{\times}{\Gamma})$, then the only possible singularities of a piecewise smooth (M, 0, $\delta$)-minimizing set $\Sigma$ are the Y-singularity cone. In a manifold with sectional curvature bounded above by $b^2$ and diameter bounded by $\pi$/b, we obtain similar results for any soap film-like surfaces spanning a graph with the corresponding bound on cone total curvature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.209-212
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• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI film was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was 8300$\AA$/min and vertical profile was approximately acquired 90$^{\circ}$ at CF$_4$/(CF$_4$+O$_2$) of 0.2. The selectivies of polyimide to PR and SiO$_2$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of 07CF4 were investigated by optical emission spectrometer (OES).