• Title/Summary/Keyword: PES Substrate

Search Result 85, Processing Time 0.021 seconds

Kinetic Studies on the Reaction of 4-Substituted-2,6-dinitrochlorobenzenes with Substituted Anilines in MeOH-MeCN Mixtures (MeOH-MeCN 혼합용매계에서 4-치환-2,6-이니트로 염화벤젠과 아닐린 치환체와의 반응에 대한 속도론적 연구)

  • Dae-Ho Kang;In-Sun Koo;Jong Gun Lee;Ikchoon Lee
    • Journal of the Korean Chemical Society
    • /
    • v.29 no.6
    • /
    • pp.565-574
    • /
    • 1985
  • The rates of reaction between 4-substituted-2,6-dinitrochlorobenzenes with para-substituted anilines in methanol-acetonitrile mixtures were measured by conductometry. It was observed that the rate constant increases in the order of X = 4-$NO_2 {\gg}4-CN {\gg}4- CF_3$, where X is a substituent in the substrate. The rate constant also increases in the order of Y = p-O$CH_3{\gg}p- CH_3{\gg}H {\gg}p-Cl{\gg}m- NO_2$, where Y is a substituent in the aniline ring. Kinetic studies in the methanol-acetonitrile solvent system with various nucleophiles showed that the N-C bond forming step is making a great contribution to the overall second order rate constant. The electrophilic catalysis by methanol probably consists of the hydrogen bonding between alcoholic hydrogen and leaving chloride in the transition state. The nucleophilic catalysis by methanol may be ascribed to the formation of hydrogen bonds between alcoholic oxygen and hydrogens of amines in the transition state. All these experimental facts are supporting the operation of $S_N$Ar machanism with the second step being the rate determining. This mechanism can be successfully fitted to the PES model.

  • PDF

Inkjet 공정에서 발생하는 TIPS Pentacene Crystalline Morphology 변화에 따른 OTFT 특성 연구

  • Kim, Gyo-Hyeok;Seong, Si-Hyeon;Jeong, Il-Seop
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.02a
    • /
    • pp.379-379
    • /
    • 2013
  • 본 논문에서는 Normal ink jetting 공법으로 OTFT를 제작할 때 coffee stain effect에 의해서 반도체 소자의 특성이 저하되는 것을 극복하기 위해서 동일한 위치에 동일한 부피로 Droplet을 형성하는 Multiple ink jetting 공법을 통해 TIPS pentacene 결정의 Morphology와 전기적 특성이 어떻게 변화하는지 알아 보았다. Multiple ink jetting의 drop 횟수가 증가할수록 coffee stain effect에 의해서 형성된 가운데 영역의 Dendrite grain이 점점 작아지다가 7 Drops 이후로는 Big grain 만 남게 되었다. Active layer의 표면 Roughness는 drop 횟수가 증가할수록 낮아지다가 일정 count 이후로는 다시 높아지는 것을 확인할 수 있었다. 전계 이동도(mobility)는 drop 횟수가 증가할수록 커지다가 일정 count 이후로는 saturation되는 것을 확인할 수 있었다. Multiple ink jetting에 의해서 만들어진 OTFT 소자의 전계 이동도(mobility)는 1 drop과 10 drops에서 각각 0.0059, 0.036 cm2/Vs 로 6배 정도 차이가 있었다. 이것은 첫 drop에 의해 만들어진 가운데 Dendrite grain 영역이 Multiple ink jetting을 반복하면서 점점 작아지게 되어 사라지고 두꺼운 Grain 영역만 남게 된 것으로 판단된다. Vth 와 On/Off ratio는 1 drop과 10 drops에서 각각 -3 V, -2 V 그리고 $3.3{\times}10^3$, $1.0{\times}10^4$를 보였다. OTFT의 substrate로 Flexible한 polyethersulfone (PES) 기판을 사용하였고, 절연체로 Spin coating된 Poly-4-vinylphenol (PVP)가 사용되었으며, Gate 및 Source/Drain 전극은 Au를 50 nm 두께로 증착하였다. Channel의 width와 length는 각각 100 um, 40 um 였고, Gate 전극 위에 Active layer를 형성한 Bottom gate 구조로 제작되었다. Ink jet으로 제작된 TIPS pentacene의 결정성은 x-ray diffraction (XRD)와 광학 현미경으로 분석하였고 Thickness profile은 알파스텝 측정기를 이용하였으며, OTFT의 전기적 특성은 Keithley-4,200을 사용하여 측정하였다.

  • PDF

Solvolysis of Substituted Benzyl Benzenesulfonates in MeOH-MeCN Mixtures (MeOH-MeCN 혼합용매계에서 치환된 벤젠술폰산벤질의 가용매 분해반응)

  • Ikchoon Lee;Won Hee Lee;Chul Hyun Kang;Se Chul Sohn;Choong Shik Kim
    • Journal of the Korean Chemical Society
    • /
    • v.28 no.6
    • /
    • pp.366-373
    • /
    • 1984
  • Methanolysis rates of benzylbenzenesulfonates, substituted both on the substrate (Y) and on the leaving group (Z), were determined in MeOH-MeCN mixtures. The results showed that the reaction proceeds via the dissociative $S_N2$ mechanism, in which bond breaking proceeds in greater degree compared to bond formation at the transition state(TS). Multiple Hammett correlation analysis showed that the cross term, ${\rho}_{YZ}$, is very small and hence the cross interaction of two substituents, Y and Z, at the TS is not important, supporting the dissociative $S_N2 $ type mechanism. While transition state variations predicted by the quantum mechanical model is shown to agree in general with the experimental results, those predicted by the potential energy surface model failed to account for the leaving group effect properly.

  • PDF

Fabrication and Characterization of Organic Thin-Film Transistors by Using Polymer Gate Electrode (고분자 게이트 전극을 이용한 유기박막 트랜지스터의 제조 및 소자성능에 관한 연구)

  • Jang, Hyun-Seok;Song, Ki-Gook;Kim, Sung-Hyun
    • Polymer(Korea)
    • /
    • v.35 no.4
    • /
    • pp.370-374
    • /
    • 2011
  • A conductive PANI solution was successfully fabricated by doping with camphorsulfonic acid and the polymerization of aniline and the confirmation of doping were characterized by FTIR spectroscopy. In organic thin film transistors, PANI gate electrodes were spin-coated on a PES substrate and their conductivity variations were monitored by a 4-probe method with different annealing temperatures. The surface properties of PANI thin films were investigated by an AFM and an optical microscope, OTFTs with PANI gate electrode had characteristics of carrier mobility as large as 0.15 $cm^2$/Vs and on/off ratio of $2.4{\times}10^6$, Au gate OTFTs with the same configuration were fabricated to investigate the effect of polymer gate electrode for the comparison of device performances. We could obtain the comparable performances of PANI devices to those of Au gate devices, resulting in an excellent alternative as an electrode in flexible OTFTs instead of an expensive Au electrode.

Fabrication of IZO thin films for flexible organic light emitting diodes by RF magnetron sputtering

  • Jun, D.G.;Cho, H.H.;Jo, D.B.;Lee, K.M.
    • Journal of Ceramic Processing Research
    • /
    • v.13 no.spc2
    • /
    • pp.260-264
    • /
    • 2012
  • We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of IZO thin films intended for use as anode contacts in the organic light emitting diodes (OLED) devices. These IZO thin films were deposited on the PES film by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar + O2, and Ar + H2) at room temperature. In order to investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon has been changed from 0.1 sccm to 0.5 sccm, respectively. All the IZO thin film has an (222) preferential orientation regardless of ambient gases. The electrical resistivity of the IZO film increased with increasing O2 flow rate, whereas the electrical resistivity decreased sharply under an Ar + H2 atmosphere and was nearly similar regardless of the H2 flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made with the configuration of IZO/α-NPD/DPVB/Alq3/LiF/Al in order to elucidate the performance of the IZO substrate. The current density and the luminance of OLED devices with IZO thin films deposited in 0.5 sccm H2 ambient gas are the highest amongst all other films.