• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.39-40
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• 2006

We prepared ZnO:Al (AZO) thin films on polycarbonate (Pc) and polyethersulfon (PES). Because the polymer substrate has weak thermal resistance. The AZO thin films were deposited at room temperature by facing targets sputtering (FTS) method In the work, AZO thin films were deposited with different thickness in 1mTorr and $O_2$ gas flow rate 0.05. The electrical, optical and crystallographic properties were measured From the results, the resistivity of $7.3{\times}10^{-4}{\Omega}cm$ and transmittance of over 80% in visible range were obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.444-445
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• 2006

We prepared ZnO:Al thin films under various sputtering conditions by using facing targets sputtering (FTS) method. ZnO:Al thin films were deposited on polyethersulfon (PES) substrate which is the thickness of 200um at room temperature. the electrical, optical and crystallographic properties of ZnO:Al were investigated. From the results, prepared alll ZnO:Al thin films showed (002) diffraction peaks. ZnO:Al thin film with a resistivity of $8.4{\times}10^{-4}{\Omega}cm$ and a transmittance of over 80% in visible range was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.27-27
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• 2009

Non-stochiometric CdS:H films grown on polyethersulfon (PES) flexible polymer substrates at room temperature by R.F. sputtering technique. They exhibited a dark- and photo-sheet resistance of $2.7\times10^5$ and $\sim\;50\;{\Omega}$/square, respectively. These values were realized by an optimum control of both hydrogen doping-levels and the surface morphologies of the films. The comparison between the real and the simulated results for the shielding and the transmission by the free space measurement system in the X-band frequency range (8.2 - 12.4 GHz) was also addressed in this study. Samples overlapped with 13 layers of CdS:H/PES were consistent with the transmission results of pure aluminum metal films ($0.1\;{\Omega}$/square) deposited on PES substrates. As a result, by the simples tacking of the CdS:H/PES layers, the perfect control of the shielding and the transmission of the EM wave in the range of X-band frequency is possible by avisible light alone, and their results are especially very outstanding findings in the stealth function of the radome(Radar+Dome) such as aircrafts, ships, and missiles.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.15-20
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• 2010

In this study, AZO (Al: 3 wt%) thin films have been prepared on PES Plastic substrates at various working pressure (5~20 mTorr), $O_2$ gas flow rate(0~3%) and the fixed substrate temperature of 200 f by using the RF magnetron sputtering and their optical and electrical properties have been studied. The XRD measurement shows that AZO thin films exhibit c-axis preferred orientation. From the results of AFM measurements, it is known that the lowest surface roughness (3.49 nm) is obtained for the AZO thin film fabricated at 5 mTorr of working pressure and 3% of $O_2$ gas flow rate. The optical transmittance of AZO thin films is measured as 80% in the visible region. We observe that the energy band gap of AZO thin films increases with decreasing the working pressure and the $O_2$ gas flow rate. This phenomenon is due to the Burstein-Moss effect. Hall measurement shows that the maximum carrier concentration ($2.63\;{\times}\;10^{20}\;cm^{-3}$) and the minimum resistivity ($4.35\;{\times}\;10^{-3}\;{\Omega}cm$) are obtained for the AZO thin film fabricated at 5mTorr of working pressure and 0% of $O_2$ gas flow rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.173-176
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• 2005

Teijin사의 HT100-B60의 폴리카보네이트(polycarbonate) $100{\mu}m$, I-Component사의 PES(polyethersulfone) $200{\mu}m$, Ferrania사의 PAR(polyacrylate) $100{\mu}m$와 $200{\mu}m$를 사용하였다 열팽창계수의 차이로 인해 공정상 기판의 가열과 냉각시 열응력이 발생하여 기판의 크랙발생의 원인이 된다. 이를 최소화하기 위해 모든 공정이 시작하기 전에 pre-annealing을 통해 plastic 기판의 시간별 공정을 실시하였다. plastic film의 annealing time은 0h, 12h, 24, 40h, 50h, 60h, 70h, 80h으로 사간을 달리하여 오븐 안의 진공상태를 조성하여 실험하였다. Thermal evaporator로 Al을 약 170nm 증착하였으며 (주)동진 세미캠의 DTFR-1011s DR LCD용 감광액을 Spin Coating Spread(500rpm/6sec), Spin(3000rpm/20sec)으로 coating하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.220-220
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• 2010

대향타겟식 스퍼터링 (Facing Target Sputtering, FTS) 장치를 이용하여 박막태양전지에 응용가능한 GAZO 박막을 플렉시블 기판 (PES) 위에 증착하였다 박막을 증착하는 데 쓰인 각각의 타겟은 AZO(ZnO:$Al_2O_3$=98:2w.t%) : GZO(ZnO:$Ga_2O_3$=97:3w.t%)이였으며, 다양한 스퍼터링 조건(공정압력, 입력 전력 및 박막의 두께)에서 증착 하였다. GAZO 박막의 전기적 특성은 Hall effect measurement, Four Point Probe, 광학적 특성은 UV-VIS spectrometer, 구조적 특성은 XRD, AFM, FE-SEM, 막의 두께는 $\alpha$-step profiler 장비를 이용하여 분석하였다. 가장 낮은 비저항은 작업 압력 1mTorr일 때 $5.123{\times}10^{-4}[\Omega-cm]$를 보였다. 또한 제작된 모든 박막은 (002)회절 피크로 우선성장함을 알 수 있었으며, 가시광선 영역(300nm-800nm)에서 80% 이상의 광 투과율을 나타냄을 알 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.203-204
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• 2009

The Indium Zinc Tin Oxide (IZTO) thin films for flexible display electrode were deposited on poly carbonate (PC) and polyethersulfone(PES) and glass substrates at room temperature by facing targets sputtering (FTS). Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90 wt.%, $SnO_2$ 10 wt.%), the other is IZO ($In_2O_3$ 90 wt.%, ZnO 10 wt.%). As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), an atomic force microscope (AFM) and a Hall Effect measurement system. As a result, we could prepare the IZTO thin films with the resistivity of under $10^{-4}\;[{\Omega}{\cdot}cm]$ and IZTO thin films deposited on glass substrate showed an average transmittance over 80% in visible range (400~800 nm) in all IZTO thin films except in IZTO thin film deposited at $O_2$ gas flow rate of 0.1[sccm].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.149-150
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• 2006

A ZnO nanowire-based FET is fabricated m this study on a flexible substrate of PES. For the flat and bent flexible substrates, the current ($I_D$) versus drain-source bias voltage ($V_{DS}$) and $I_D$ versus gate voltage ($V_G$) results are compared. The flat band was Ion/Ioff ratio of ${\sim}10^7$, a transconductance of 179 nS and a mobility of ~10.104 cm2/Vs at $V_{DS}$ =1 V. Also bent to a radius curvature of 0.15cm and experienced by an approximately strain of 0.77 % are exhibited an Ion/Ioff ratio of ${\sim}10^7$, a transconductance of ~179 nS and a mobility of ${\sim}10.10 cm^2/Vs$ at $V_{DS}$ = 1V. The electrical characteristics of the FET are not changed very much. although the large strain is given on the device m the bent state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.26-26
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• 2010

Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at $H_2(Ar+H_2)$ flow ratios on polyethersulfon(PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and $2.7{\times}10^5{\Omega}$/square, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the $Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.760-765
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• 2014

MgZnO has attracted a lot of attention for flexible device. In the flexible substrate, the crystal structure of the thin films as well as the surface morphology is not good. Therefore, in this study, we studied on the effects of the oxygen pressure on the structure and crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films deposited on PES substrate by using pulsed laser deposition. We used X-ray diffraction and atomic force microscopy in order to observe the structural characteristics of $Mg_{0.3}Zn_{0.7}O$ thin films. The crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films with increasing temperature was improved, Grain size and RMS of the films were increased. UV-visible spectrophotometer was used to get the band gap energy and transmittance. $Mg_{0.3}Zn_{0.7}O$ thin films showed high transmittance over 90% in the visible region. As increased working pressure from 30 mTorr to 200 mTorr, the bandgap energy of $Mg_{0.3}Zn_{0.7}O$ thin film were decreased from 3.59 eV to 3.50 eV.