• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.80-80
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• 2001

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.62-62
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• 2002

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.63-63
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• 2002

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.12-15
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• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.989-992
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• 2004

PEMBE(plasma enhanced molecular beam epitaxy)방법으로 성장된 GaN 박막의 초기 거동현상을 실시간 X-선 산란을 이용하여 관찰하였다. 표면이 원자 계단(atomic step)을 이루고 있는 사파이어 기판 위에 성장하는 GaN 박막은 layer-by-layer 모드로 성장 후 3D 모드로 성장을 하였다. 거친 표면을 가진 사파이어 기판 위에 성장하는 GaN 박막은 성장 초기는 표면을 평평하게 만든 후, 3D 모드로 성장하였다. 플라즈마로 생성된 이온화된 질소는 표면의 에너지를 변화시켜 GaN 박막의 증착을 증진시키고, 표면의 coverage를 증가시킨다.

• Journal of Korean Neurosurgical Society
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• 제55권5호
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• pp.277-279
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• 2014

Autonomic dysreflexia is a clinical emergency syndrome of uncontrolled sympathetic output that can occur in patients who have a history of spinal cord injury. Despite its frequency in spinal cord injury patients, central nervous system complications are very rare. We report a man with traumatic high level incomplete spinal cord injury who suffered hypertensive right thalamic hemorrhage secondary to an episode of autonomic dysreflexia. Prompt recognition and removal of the triggering factor, the suprapubic catheter obstruction which led to hypertensive attack, the patient had a favorable functional outcome after the resorption of the hematoma and effective rehabilitation programme.

• Structural Engineering and Mechanics
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• 제64권4호
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• pp.505-513
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• 2017

In this paper, a receding contact problem for an elastic layer resting on a half plane is considered. The layer is pressed by two rectangular stamps placed symmetrically. It is assumed that the contact surfaces are frictionless and only compressive traction can be transmitted through the contact surfaces. In addition the effect of body forces is neglected. Firstly, the problem is solved analytically based on theory of elasticity. In this solution, the problem is reduced into a system of singular integral equations in which half contact length and contact pressures are unknowns using boundary conditions and integral transform techniques. This system is solved numerically using Gauss-Jacobi integral formulation. Secondly, two dimensional finite element analysis of the problem is carried out using ANSYS. The dimensionless quantities for the contact length and the contact pressures are calculated under various stamp size, stamp position and material properties using both solutions. The analytic results are verified by comparison with finite element results.

• Structural Engineering and Mechanics
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• 제83권1호
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• pp.67-77
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• 2022

In this study, frictionless continuous and discontinuous contact problems of a magneto-electro-elastic layer in the presence of the body force were discussed. The layer was indented by a rigid cylindrical insulating punch and supported by a rigid substrate without bond. Applying the Fourier integral transform technique, the general expressions of the problem were derived in the presence of body force. Thanks to the boundary conditions, the singular integral equations were obtained for both the continuous and the discontinuous contact cases. Gauss-Chebyshev integration formulas were used to transform the singular integral equations into a set of nonlinear equations. Contact width under the punch, initial separation distance, critical load, separation regions and contact stress under the punch and between the layer, and substrate were given as a result.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.66-69
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• 2001

Effect of $N_2$ flow rate on properties of GaN thin films grown by plasma-enhanced molecular beam epitaxy(PEMBE) was discussed to optimize the quality of thin films. It was found that at low $N_2$ flow rate indicating high III/V flux ratio, the growth rate of GaN thin films was controlled by $N_2$ flux, and at high $N_2$ flow rate the growth rate was not controlled by $N_2$ flux any longer. It was also found that III/V flux ratio affected film quality. The film grown at higher $N_2$ flow rate showed low background carrier concentration, higher carrier mobility, and narrow FWHM in band-edge emission of low temperature PL. It is thought that the film in more Ga flux region was grown by 2-dimensional layer-by-layer growth mode, and the film in more nitrogen region was grown by 3-D island growth mode. All samples exhibited a good crystallinity.