• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.662-665
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• 2002

The growth of carbon nanotubes (CNTs) was carried out using ratio frequency plasma enhanced chemical vapor deposition (rf PECVD) system equipped with dc bias for the directional growth. Acetylene and ammonia gas were used as the carbon source and a catalyst. The relation between gas flow rate and dc bias on the growth of CNTs was investigated. We studied the relation between emission properties and the directionality of CNTs grown under different dc bias voltage.

• 정보저장시스템학회:학술대회논문집
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• 정보저장시스템학회 2005년도 추계학술대회 논문집
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• pp.185-189
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• 2005

We reported here nano-scale electrical phase-change recording in amorphous $Ge_2Sb_2Te_5$ media using an atomic force microscope (AFM) having conducting probes. In recording process, a pulse voltage is applied to the conductive probe that touches the media surface to change locally the electrical resistivity of a film. However, in contact operation, tip/media wear and contamination could major obstacles, which degraded SNR, reproducibility, and lifetime. In order to overcome tip/media wear and contamination in contact mode operation, we adopted the W incorporated diamond-like carbon (W-DLC) films as a protective layer. Optimized mutilayer media were prepared by a hybrid deposition system of PECVD and RF magnetron sputtering. When suitable electrical pulses were applied to media through the conducting probe, it was observed that data bits as small as 25 nm in diameter have been written and read with good reproducibility, which corresponds to a data density of $1 Tbit/inch^2$. We concluded that stable electrical phase-change recording was possible mainly due to W-DLC layer, which played a role not only capping layer but also resistive layer.

• 한국정밀공학회지
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• 제24권6호
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• pp.113-120
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• 2007

Chemical vapor deposition (CVD) is one of the various synthesis methods that have been employed for carbon nanotube (CNT) growth. In particular, Ren et al reported that large areas of vertically aligned multi-wall carbon nanotubes could be grown using a direct current (dc) PECVD system. The synthesis of CNT requires a metal catalyst layer, etchant gas, and a carbon source. In this work, the substrates consists of Si wafers with Ni-deposited film. Ammonia $NH_3$) and acetylene ($C_2H_2$) were used as the etchant gases and carbon source, respectively. Pretreated conditions had an influence on vertical growth and density of CNTs. And patterned growth of CNTs could be achieved by lithographical defining the Ni catalyst prior to growth. The length of single CNT was increased as niclel dot size increased, but the growth rate was reduced when nickel dot size was more than 200 nm due to the synthesis of several CNTs on single Ni dot. The morphology of the carbon nanotubes by TEM showed that vertical CNTs were multi-wall and tip-type growth mode structure in which a Ni cap was at the end of the CNT.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.447-447
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• 2010

일찍이 $SiO_2$ (Silicon dioxide) 박막은 다양한 분야에서 유전층, 부식 방지층, passivation층 등의 역할을 해왔다. 그리고 이러한 박막 공정은 대부분 진공의 환경에서 그 공정이 이루어지고 있다. 하지만 이러한 진공 system은 chamber, loadlock 그리고 펌프 등의 다양한 진공장비로 인한 생산 비용 증가, 공정의 복잡성뿐만 아니라 공정의 대면적화에 어려움을 지니고 있다. 그리고 최근 flexible display의 제조 공정에서 polymer 혹은 plastic 기판을 제조 공정에 적용시키기 위해 저온 공정이 필수적으로 요구 되고 있다. 이러한 기술적 한계를 뛰어 넘기 위해 최근 많은 연구가들은 atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD)에 대해 지속적으로 다양한 연구를 하고 있다. 본 연구에서는 remote-type의 modified pin-to-plate dielectric barrier discharge (DBD) 시스템을 이용한 $SiO_2$ 무기 박막 증착에 관해 연구하였다. $O_2$/He/Ar의 gas와 5 kV AC power (30 kHz)의 전원장치를 통해 고밀도 대기압 플라즈마를 발생시켰고, silicon precursor로는 hexamethyldisilazane (HMSD)를 사용하였다. 먼저 HMDS와 $O_2$ gas의 flow rate 변화에 따른 증착률을 조사하였고 그 다음으로 박막의 조성 및 표면 특성을 조사하였다. HMDS의 유량이 100 ~ 300 sccm으로 증가함에 따라 증착속도는 증가했다. 하지만 FT-IR을 통해 HMDS의 유량이 증가하면 반응에 참여할 산소 분자의 부족으로 인해 $-(CH_3)_X$의 peak intensity가 증가하고, -OH의 peak intensity가 점차 감소함을 관찰 할 수 있었다. 또한 증착된 박막의 표면에 particle과 불균일한 surface morphology 등을 SEM image를 통해 관찰 하였다. 산소 유량이 탄소와 관련된 많은 불순물들의 제거에 도움이 됨에도 불구하고 14 slm 이상의 산소가 반응기 내로 주입되게 되면 대기압 플라즈마의 discharge가 불안정하게 되어 공정효율을 저하시키는 요소가 되었다. 결과적으로 HMDS (150 sccm)/$O_2$ (14 slm)/He (5 slm)/Ar (3 slm)의 조건에서 약 42.7 nm/min 증착률을 가지며, 불순물이 적고 surface morphology가 깨끗한 $SiO_2$ 박막을 증착할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Advances in aircraft and spacecraft science
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• 제4권6호
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• pp.729-744
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• 2017

This investigation highlights rationale of electrically conductive nano adhesives for its essential application for Electromagnetic Interference (EMI) Shielding in satellites and Lightning Strike Protection in aircrafts. Carbon Nano Fibres (CNF) were functionalized by electroless process using Tollen's reagent and by Plasma Enhanced Chemical Vapour Deposition (PECVD) process by depositing silver on CNF. Different weight percentage of CNF and silver coated CNF were reinforced into the epoxy resin hardener system. Scanning Electron Microscopy (SEM) micrographs clearly show the presence of CNF in the epoxy matrix, thus giving enough evidence to show that dispersion is uniform. Transmission Electron Microscopy (TEM) studies reveal that there is uniform deposition of silver on CNF resulting in significant improvement in interfacial adhesion with epoxy matrix. There is a considerable increase in thermal stability of the conductive nano adhesive demonstrated by Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA). Four probe conductivity meters clearly shows a substantial increase in the electrical conductivity of silver coated CNF-epoxy composite compared to non-coated CNF-epoxy composite. Tensile test results clearly show that there is a significant increase in the tensile strength of silver coated CNF-composites compared to non-coated CNF-epoxy composites. Consequently, this technology is highly desirable for satellites and EMI Shielding and will open a new dimension in space research.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.181-181
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• 2016

Hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films have attracted much attention as materials of the bottom-cells in Si thin film tandem photovoltaics due to their low bandgap and excellent stability against light soaking. However, in PECVD, the source gas $SiH_4$ must be highly diluted by $H_2$, which eventually results in low deposition rate. Moreover, it is known that high-rate ${\mu}c-Si:H$ growth is usually accompanied by a large number of dangling-bond (DB) defects in the resulting films, which act as recombination centers for photoexcited carriers, leading to a deterioration in the device performance. During film deposition, Si nanoparticles generated in $SiH_4$ discharges can be incorporated into films, and such incorporation may have effects on film properties depending on the size, structure, and volume fraction of nanoparticles incorporated into films. Here we report experimental results on the effects of nonoparticles incorporation at the different substrate temperature studied using a multi-hollow discharge plasma CVD method in which such incorporation can be significantly suppressed in upstream region by setting the gas flow velocity high enough to drive nanoparticles toward the downstream region. All experiments were performed with the multi-hollow discharge plasma CVD reactor at RT, 100, and $250^{\circ}C$, respectively. The gas flow rate ratio of $SiH_4$ to $H_2$ was 0.997. The total gas pressure P was kept at 2 Torr. The discharge frequency and power were 60 MHz, 180 W, respectively. Crystallinity Xc of resulting films was evaluated using Raman spectra. The defect densities of the films were measured with electron spin resonance (ESR). The defect density of fims deposited in the downstream region (with nonoparticles) is higher defect density than that in the upstream region (without nanoparticles) at low substrate temperature of RT and $100^{\circ}C$. This result indicates that nanoparticle incorporation can change considerably their film properties depending on the substrate temperature.

• Journal of Electrical Engineering and Technology
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• 제12권5호
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• pp.2007-2013
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• 2017

In order to give hydrophobic surface properties on carbon steel, the fluorinated amorphous carbon films were prepared by using linear 2.45GHz microwave PECVD device. Two different process approaches have been tested. One is direct deposition of a-C:H:F films using admixture of $Ar/CH_4/CF_4$ working gases and the other is surface treatment using $CF_4$ plasma after deposition of a-C:H film with $Ar/CH_4$ binary gas system. $Ar/CF_4$ plasma treated surface with high $CF_4$ gas ratio shows best hydrophobicity and durability of hydrophobicity. Nanometer scale surface roughness seems one of the most important factors for hydrophobicity within our experimental conditions. The properties of a-C:H:F films and $CF_4$ plasma treated a-C:H films were investigated in terms of surface roughness, hardness, microstructure, chemical bonding, atomic bonding structure between carbon and fluorine, adhesion and water contact angle by using atomic force microscopy (AFM), nano-indentation, Raman analysis and X-ray photoelectron spectroscopy (XPS).

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.281-284
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• 2007

Recently, we have developed p-i-n a-Si:H single junction thin film solar cells with RF (13.56MHz) plasma enhanced chemical vapor deposition (PECVD) system, and also successfully fabricated the mini modules ($>300cm^2$), using the laser patterning technique to form an integrated series connection. The efficiency of a mini module was 7.4% ($Area=305cm^2$, Isc=0.25A, Voc=14.74V, FF=62%). To fabricate large area modules, it is important to optimise the integrated series connection, without damaging the cell. We have newly installed the laser patterning equipment that consists of two different lasers, $SHG-YVO_4$ (${\lambda}=0.532{\mu}m$) and YAG (${\lambda}=1.064{\mu}m$). The mini-modules are formed through several scribed lines such as pattern-l (front TCO), pattern-2 (PV layers) and pattern-3 (BR/back contact). However, in the case of pattern-3, a high-energy part of laser shot damaged the textured surface of the front TCO, so that the resistance between the each cells decreases due to an incomplete isolation. In this study, the re-deposition of SnOx from the front TCO, Zn (BR layer) and Al (back contact) on the sidewalls of pattern-3 scribed lines was observed. Moreover, re-crystallization of a-Si:H layers due to thermal damage by laser patterning was evaluated. These cause an increase of a leakage current, result in a low efficiency of module. To optimize a-Si:H single junction thin film modules, a laser beam profile was changed, and its effect on isolation of scribed lines is discussed in this paper.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.124-124
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• 2011

This study investigated the interaction of varied plasma power with ultralow-k toluene-tetraethoxysilane (TEOS) hybrid plasma polymer thin films, as well as changing electrical and mechanical properties. The hybrid thin films were deposited on silicon(100) substrates by plasma enhanced chemical vapor deposition (PECVD) system. Toluene and tetraethoxysilane were utilized as organic and inorganic precursors. In order to compare the electrical and the mechanical properties, we grew the hybrid thin films under various conditions such as rf power of plasma, bubbling ratio of TEOS to toluene, and post annealing temperature. The hybrid plasma polymer thin films were characterized by Fourier transform infrared (FT-IR) spectroscopy, atomic force microscopy (AFM), nanoindenter, I-V curves, and capacitance. Also, the hybrid thin films were analyzed by using ellipsometry. The refractive indices varied with the RF power, the bubbling ratio of TEOS to toluene, and the annealing temperature. To analyze their trends of electrical and mechanical properties, the thin films were grown under conditions of various rf powers. The IR spectra showed them to have completely different chemical functionalities from the liquid toluene and TEOS precursors. Also, The SiO peak intensity increased with increasing TEOS bubbling ratio, and the -OH and the CO peak intensities decreased with increasing annealing temperature. The AFM images showed changing of surface roughness that depended on different deposition rf powers. An nanoindenter was used to measure the hardness and Young' modulus and showed that both these values increased as the deposition RF power increased; these values also changed with the bubbling ratio of TEOS to toluene and with the annealing temperature. From the field emission scanning electron microscopy (FE-SEM) results, the thickness of the thin films was determined before and after the annealing, with the thickness shrinkage (%) being measured by using SEM cross-sectional images.