• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.284-287
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• 2000

We analyzed the 3-dimensional discharge characteristic in plasma display panel(PDP) cell using the 3-dimensional emission distribution of 828nm light measured by scanned point detecting method(SPDM). The emitted light distributions on the ITO electrode show the stronger light intensity near to the electrode gap than outside. Also, 828nm light is widely detected outside of the bus electrode. We consider that measurement using new SPDM is effective to analyze the discharge physics and propose the new panel structures.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.33-42
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• 1997

In this paper, a new structure for a dC plasma display pane(PDP) with a wall-catode and a wall-auxilizry anode has been suggested. The wall-cathode with a sufficient discharge area maximizes the discharge volume. The auxiliary anode surrounding the discharge region makes the effective control of the charged particles possible. We have investigated the cahracteristics of the new cell structure with a 2-dimensional computer simulation and a micro gap discharge system, and compared experimentally with those of previous cell structure. The new cell structure with the wall-cathode and auxiliary wall-anode turned out to have improved luminance, discharge forming time and sustain voltage.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.2
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• pp.291-298
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• 2023

SRAM-based in-memory computing is one of the technologies to solve the bottleneck of von Neumann architecture. In order to achieve SRAM-based in-memory computing, it is essential to design efficient SRAM bit-cell. In this paper, we propose a low-power differential sensing 8+T SRAM bit-cell which reduces power consumption and improves circuit performance. The proposed 8+T SRAM bit-cell is applied to ripple carry adder which performs SRAM read and bitwise operations simultaneously and executes each logic operation in parallel. Compared to the previous work, the designed 8+T SRAM-based ripple carry adder is reduced power consumption by 11.53%, but increased propagation delay time by 6.36%. Also, this adder is reduced power-delay-product (PDP) by 5.90% and increased energy-delay- product (EDP) by 0.08%. The proposed circuit was designed using TSMC 65nm CMOS process, and its feasibility was verified through SPECTRE simulation.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.91-94
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• 2003

We studied the effect of barrier rib height variation using ray-optics code incorporated with three-dimensional plasma simulation to analyze the effects of cell geometry for varying pressure conditions. The optimal barrier rib height decreased as the Xe partial pressure increased which resulted in due to the formation of local, strong sheath under high Xe partial pressure condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.59-62
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• 1996

Plasma displays (PDP) as a large area wall-hanging display device are rabidly developed with flat CRT, TPT LCD and etc. Especially, AC Plasma Display Panels(AC PDPs) have the inherent memory function which is effective for large area displays. The memory function in AC PDPs is caused by the accumulation of the electrical charge on the protecting layer formed on the dielectric layer. This MgO protective layer prevents the dielectric layer from sputtering by ion in discharge plasma and also has the additional important roll in lowering the firing voltage due to the large secondary electron emission coefficient). Until now, the MgO Protective layer is mainly formed by E-Beam evaporation. With increasing the panel size, this process is difficult to attain cost reduction, and are not suitable for large quantity of production. To the contrary, the methode of shuttering are easy to apply on mass production and to enlarge the size of the panel and shows the superior adhesion and uniformity of thin film. In this study, we have prepared MgO protective layer on AC PDP Cell by reactive magnetron sputtering and studied the effect of MgO layer on the surface discharge characteristics of ac PDP.

• Korean Journal of Optics and Photonics
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• v.13 no.6
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• pp.559-563
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• 2002

We measure the 3-dimensional temporal behavior of the light emitted from the discharge cell of a plasma display panel (PDP) by using a scanned point detecting system. The light signal detected by a PM tube is sent to the oscilloscope, and the oscilloscope is connected to a PC with GPIB. From the resultant temporal behaviors, we could analyze the discharge characteristics of the panel with a Ne-Xe (4%) mixing gas at a 400 torr pressure. The top view of the panel shows that discharge moves from the inner edge of the cathode electrode to the outer cathode electrode, forming an arc shape. The side view of the panel shows that the light is detected up to 150 $\mu\textrm{m}$ up the barrier rib. After a trigger pulse is applied, peak intensity is detected at 730 ns and peak intensity position is located at the center of the ITO electrodes.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.445-448
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• 2005

A new high efficiency phase shifted full bridge (PSFB) converter for sustaining power module of plasma display panel (PDP) is proposed in this paper .The proposed converter employs the rectifier of voltage doubler type without output inductor. Since it has no output inductor, the voltage stresses of the secondary rectifier diodes can be clamped at the level of the output voltage. Therefore, no dissipative resistor-capacitor (RC) snubber for rectifier diodes is needed and a high efficiency as well as low noise cutout voltage can be realized. In addition, due to elimination of the large output inductor, it features a simple structure, lower cost, less mass, and lighter weight. Furthermore, the proposed converter has wide zero voltage switching (ZVS ) ranges with low current stresses of the primary switches. Also the resonance between the leakage inductor of the transformer and the capacitor of the voltage doubler cell makes the current stresses of the primary switches and rectifier diodes reduced. In this paper, the operational principles, analysis of the proposed converter, and the experimental results are presented.

• Journal of KIEE
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• v.11 no.1
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• pp.27-32
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• 2001

In this study, the luminance, luminous efficiency and address time of an PDP as a parameter of the phosphor thickness and the size of discharge space are investigated. The maximum luminance and luminous efficiency are obtained at the phosphor thickness of 30 ${\mu}{\textrm}{m}$ for the rib height of 110 ${\mu}{\textrm}{m}$. For the rib height of 120~160 ${\mu}{\textrm}{m}$, the maximum values are obtained at the thickness of 50 ${\mu}{\textrm}{m}$ regardless of the kind of R, G and B phosphor. These results do not affected by the variation of discharge space. The average decrease rate of the total charge to the phosphor thickness is about 3.35pc/cell/10 ${\mu}{\textrm}{m}$ and the average increase rate of the addressing time is about 0.027 $mutextrm{s}$/10 ${\mu}{\textrm}{m}$.

• Journal of Power Electronics
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• v.6 no.1
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• pp.45-51
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• 2006

A new high efficiency phase shifted full bridge (PSFB) converter for the power sustaining module of a plasma display panel (PDP) is proposed in this paper. The proposed converter employs a voltage doubler rectifier without an output inductor. Since it has no output inductor, the voltage stresses of the secondary rectifier diodes can be clamped at the output voltage level. No dissipative resistor-capacitor (RC) snubber for rectifier diodes is needed. Therefore, high efficiency, as well as, a low noise output voltage can be realized. Due to the elimination of the large output inductor, it features a simple structure, lower cost, smaller mass and lighter weight. Furthermore, the proposed converter has wide zero voltage switching (ZVS) ranges with low current stresses of the primary switches. Also the resonance between the leakage inductor of the transformer and the capacitor of the voltage doubler cell reduces the current stresses of the rectifier diodes. In this paper, operational principles, an analysis of the proposed converter and experimental results are presented.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.721-724
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• 2009

In this paper, we proposed fence electrode structures. The experimental structures change cross-bar length as 145, 105, 65 and $30{\mu}m$ to improve the electro-optical characteristics. The proposed structures improve the addressing time and luminous efficacy compared with the T145 structure which has the cross-bar length of $145{\mu}m$ as the reference. Especially, in the case of the T30 structure with cross-bar length of $30{\mu}m$, it gains lower power consumption by 34%, and higher luminous efficacy by 20% than those of the reference structure.