• Title/Summary/Keyword: PCB(Printed circuit board)

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The characteristics of bismuth magnesium niobate multi layers deposited by sputtering at room temperature for appling to embedded capacitor (임베디드 커패시터로의 응용을 위해 상온에서 RF 스퍼터링법에 의한 증착된 bismuth magnesium niobate 다층 박막의 특성평가)

  • Ahn, Jun-Ku;Cho, Hyun-Jin;Ryu, Taek-Hee;Park, Kyung-Woo;Cuong, Nguyen Duy;Hur, Sung-Gi;Seong, Nak-Jin;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.62-62
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    • 2008
  • As micro-system move toward higher speed and miniaturization, requirements for embedding the passive components into printed circuit boards (PCBs) grow consistently. They should be fabricated in smaller size with maintaining and even improving the overall performance. Miniaturization potential steps from the replacement of surface-mount components and the subsequent reduction of the required wiring-board real estate. Among the embedded passive components, capacitors are most widely studied because they are the major components in terms of size and number. Embedding of passive components such as capacitors into polymer-based PCB is becoming an important strategy for electronics miniaturization, device reliability, and manufacturing cost reduction Now days, the dielectric films deposited directly on the polymer substrate are also studied widely. The processing temperature below $200^{\circ}C$ is required for polymer substrates. For a low temperature deposition, bismuth-based pyrochlore materials are known as promising candidate for capacitor $B_2Mg_{2/3}Nb_{4/3}O_7$ ($B_2MN$) multi layers were deposited on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system at room temperature. The physical and structural properties of them are investigated by SEM, AFM, TEM, XPS. The dielectric properties of MIM structured capacitors were evaluated by impedance analyzer (Agilent HP4194A). The leakage current characteristics of MIM structured capacitor were measured by semiconductor parameter analysis (Agilent HP4145B). 200 nm-thick $B_2MN$ muti layer were deposited at room temperature had capacitance density about $1{\mu}F/cm^2$ at 100kHz, dissipation factor of < 1% and dielectric constant of > 100 at 100kHz.

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Interference Fringe Signal Filtering Method for Performance Enhancing of White Light Interfrometry (가간섭 영역 외의 배경 잡음성 간섭무늬 신호 필터링을 통한 백색광 주사간섭계의 성능 향상)

  • Yim, Hae-Dong;Lee, Min-Woo;Lee, Seung-Gol;Park, Se-Geun;Lee, El-Hang;O, Beom-Hoan
    • Korean Journal of Optics and Photonics
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    • v.20 no.5
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    • pp.272-275
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    • 2009
  • In order to enhance the background noise filtering performance of the white light interferometry(WLI), we demonstrate the noise filtering performance of preprocessing of the measured fringe signals. The WLI was realized through a mirau interferometer which was equipped with a green LED. When measuring large-height and rough surface objects, the illumination optics are considered the numerical aperture(NA) and the depth of focus(DOF). In this case, the limited NA of the illumination optics has a considerable impact on the interference fringe. Therefore, we propose a preprocessing method that uses the intensity difference between the measured intensity and the moving average intensity. The performance is demonstrated by measuring an array of metal solder balls fabricated on printed circuit board(PCB). The proposed method reduces the noise pixels by 15 percent.