• Journal of the Korea Institute of Building Construction
• /
• v.14 no.6
• /
• pp.571-581
• /
• 2014

In the present study, hollow precast concrete wall (PC Double Wall) for staircase construction was developed. Comparing the conventional walls, the PC Double Wall can be reduced the lift weight using hollow core and improves the integrity between the PC members. The cross-section and re-bar details of the PC Double Wall were developed considering precast concrete manufacturing, constructability, and the structural safety. Particularly, a form system was developed to manufacture thin and hollow core PC wall efficiently. A mock-up test for a staircase using the PC Double wall was performed to verify the constructability and integrity of the PC walls. The test result verified that joint deformation and cracking did not occur as showing good constructability.

• Journal of the Korea Institute of Building Construction
• /
• v.23 no.4
• /
• pp.465-476
• /
• 2023

This study introduces the development of a precast concrete double-wall, applicable to basement construction in apartment buildings. Unlike traditional precast concrete double walls, the developed double-wall doesn't require specialized manufacturing equipment such as a lathe. The constructability of these advanced technologies was validated through a full-scale mock-up test using the precast concrete double wall. The test specimens were constructed to represent a structural wall with a thickness of 250mm. It was observed that the quality of the in-situ concrete, filled between two single panels of 110mm thickness each, was excellent. The construction efficiency of the developed double-wall system for basement construction in an apartment building was also examined. Expert interviews about installation times of precast concrete elements were conducted to evaluate the speed of the basement floor's installation. The results showed that installation of precast concrete elements, including the proposed double walls, could be completed within 20 to 29 days for a basement in an apartment building. This indicates a three-fold increase in construction efficiency compared to traditional methods relying on in-situ casting.

• Journal of the Korea institute for structural maintenance and inspection
• /
• v.27 no.2
• /
• pp.25-32
• /
• 2023

In this study, a double wall system is introduced, which was invented to simplify the complicated manufacturing process of the existing precast concrete (PC) double wall systems and to remove defects such as laitance that may occur during the production of concrete panels. An experimental study was conducted to investigate the tensile resisting capacity of the steel tube which is embedded in the precast concrete panel to keep the spacing between PC panels and to prevent damage of the PC panels during transportation and casting concrete onsite. The experiment was planned to determine the detail of effective steel tube connection considering the steel plate treatment method according to the formation of the opening, the presence of embedded concrete, and the reinforcement welding for additional dowel action as key variables. As a result, the ultimate tensile strength increased by 20-30% compared to the control specimen (ST) except for the steel tube specimen (ST_CP) which has steel plates bent inward at the end part of the steel tube. Since the specimen (ST_CON) filled with concrete inside the control specimen has no additional process and cost for the steel tube connections compared to the control specimen during the production of the developed double wall system, it is determined to be the appropriate detail of steel tube connection.

• Magazine of the Korea Concrete Institute
• /
• v.28 no.6
• /
• pp.53-56
• /
• 2016

• Journal of the Korea Concrete Institute
• /
• v.21 no.5
• /
• pp.549-556
• /
• 2009

This research analyzed the structural efficiency and application by improving the 100 mm width vertical joint to 150 mm and developing three connection methods to reduce the difficulty in assembling and handling PC walls. Moreover, nonlinear finite analysis was used for analyzing. From the analysis results, when double width connection was applied, the PC wall showed larger load capacity and ductility due to the steel bar sharing loads efficiently. Moreover, as the dimension of loops and the number of bars increased, the maximum load capacity increased as well. Also, among the double width connections, the largest capacity showed in the order of welding, ring and C type loop. However, in case of welding type loop connection, the ring type loop is more stable due to changes in different site conditions. Therefore, thorough quality control of welding is necessary.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.344-348
• /
• 2004

The CdSe thin films wee grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are $600^{\circ}C\;and\;430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the timperature range 30K to 150K by impurity scatering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^7$, the MAPD of 335mV, and the rise and decay time of 10ms and 9.5ms, respectively

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.304-308
• /
• 2004

The $Cd_{1-x}Zn_xS$ thin films were grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are $600^{\circ}C\;and\;440^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the $Cd_{0.53}Zn_{0.47}S$ samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.65{\times}10^7$, the MAPD of 338mW, and the rise and decay time of 9.7ms and 9.3ms, respectively

• Korean Journal of Crystallography
• /
• v.9 no.1
• /
• pp.53-63
• /
• 1998

The Cd1-xZnxS thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). the source and substrate temperature are 600℃ and 440℃, respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction (DCXD). Hall effect on the sample was measured by the van der Pauw method and the carrier density and mobility dependence of Hall characteristics on temperature was also studied. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (γ), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that the best photoconductive characteristic were observed in the Cd0.53Zn0.47S samples annealed in Cu vapor comparing with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.65 × 107, the MAPD of 338mW, and the rise and decay time of 9.7 ms and 9.3 ms, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.349-352
• /
• 2004

The $CdS_{1-x}Se_x$ thin films were grown on the GaAs(100) wafers by a Hot Wall Epitaxy method(HWE). The temperatures the source and the substrate temperature are $580^{\circ}C\;and\;440^{\circ}C$ respectively. The crystalline structure of thin films was investigated by double crystal X-tay diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.263-266
• /
• 2004

The stochiometric mix of evaporating materials for the $ZnGa_2Se_4$ single crystal thin films were prepared from horizental furnace. The polycrystal structure obtaind from the power x-ray diffraction was defect chalcopyrite. The lattice costants $a_0\;and\;c_0\;were\;a_0=5.51\;A,\;c_0=10.98\;A$. To obtains the single crystal thin films, $ZnGa_2Se_4$ mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current(pc/dc), maximum allowable rower dissipation(MAPD), spectral response and response time.