• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.308-313
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• 1997

TDS (Thermal Lkso~ption Spectroscopy)system, for diagnosis of CRT manufacturing process, was designed and constructed. Outgassings and themla1 desorptions from the part or materials of CRT can be measured and analysed with this system at various temperatures. The system is consisted of 3 pirrts. vacuum chamher and pumping system with variable conductance, sample heating stages & their controller, and outgassing measurement devices, like as ion gauge or quadrupole mass spectrometer. The ultimate pressure of the system was under $1\times10^{-7}$ Pa. With the variable conductance system, the effective pumping speed of the chamber could he controlled from sub 11s to 100 11s. The effective pumping speed values were determined by dynamic flow measurement principle. The temperatures and ramp rate of sample were controlled by tungsten heater and PID controller up to $600^{\circ}C$ within t $\pm 1^{\circ}C$$difference to setting value. Ion gauge & QMS were calibrated for quantitative measurements. Some examples of TDS measurement data ;ind application on the CRT process analysis were shown.

• Journal of the Korean Institute of Telematics and Electronics
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• v.17 no.5
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• pp.36-42
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• 1980

In this study, multi-microprocessors system in which slave microprocessor is conrlected with master microprocessor bus through the DMA controller is designed by the use of four 8085 CPU. A high degree of processing efficiency could be obtained by making this system work parallel processing. The result of measuring relat ions bet ween working microproressor and system throughput was 70-80 percents lower than ideal value Master microprocessor takes charge of resource allocation and scheduling, common memory assigns communication between microprocessors and a store of common data. The met hod of detecting Pa rallelism from source Program composed by series is also suggested.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.05a
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• pp.247-251
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• 2008

This paper presents a micro air pump actuated by PZT actuator (synthetic jet actuator) for air supply for micro fuel cells. The synthetic jet actuators are usually created by a traditional PZT-driven actuator, which consists of a small cylindrical cavity, in/outlet channel and PZT diaphragms. To design the micro air pump, a numerical analysis has been conducted for flow characteristics with respect to various geometries. A prototype of the micro air pump, with a size of $mm{\times}mm{\times}mm$, was fabricated by PDMS replication process and was conducted performance test. To control the PZT actuator, we used the SP4423 micro chips that can be amplified input voltage to reduce the controller size and the power consumption. With a voltage of 3V at 100Hz, the air pump's pumping pressure is 600pa and its power consumption is only 0.1mW.

• Land and Housing Review
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• v.5 no.4
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• pp.325-332
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• 2014

The purpose of this study was to measure the airtightness and Air-Flow Performance for 7th house of small apartment houses adopted window frame-type natural ventilation. All window and living room door is provide with window frame-type natural ventilation, and there is provide with manual controller. As the object of measurement, the 6th type small apartment houses with area of $33m^2$ to $51m^2$ was selected. airtightness performance was measured at the front door using Blower door system. We measured ventilation rate per hour on 50Pa pressure different between inside and outside by the 1st to 6th cases. As a result, when the natural ventilation frame was closed, average amounts are shown as the ventilation rate per hour were 2.27ACH (CASE1). and the result is similar to general apartment house (1.65~4.28ACH). When the natural ventilation frame was open, average amounts are shown as the ventilation rate per hour were 5.87ACH (CASE6). In addition, that's a 3.6ACH increased more than CASE1.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.