• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.9-10
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• 2006

The patterning for the active layer of organic semiconductors is important to attain completely organic-based OTFTs(Organic Thin Film Transistors). We studied on possibility of the application of the conventional photolithography technique to pattern the organic active layer poly(3-hexylthiophene)(P3HT). Patterned P3HT-based OTFTs with Bottom Contact(BC) configuration were fabricated using the conventional photolithography. We achieved field-effect mobilities in the saturation regime ${\sim}1.2{\times}10^{-3}cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}10^5$ in the subtractive method, ${\sim}8{\times}10^{-4}cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}10^3$ in the additive one.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.467-468
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• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFT) that consist of indium-zinc-oxide (IZO), PVP (poly-vinyl phenol), and Ni for the source-drain (S/D) electrode, gate dielectric, and gate electrode, respectively. The IZO S/D electrodes of which the work function is well matched to that of P3HT were deposited on a P3HT channel by thermal evaporation of IZO and showed a moderately low but still effective transmittance of ~25% in the visible range along with a good sheet resistance of ${\sim}60{\Omega}/{\square}$. The maximum saturation current of our P3HT-based TFT was about $15{\mu}A$ at a gate bias of -40V showing a high field effect mobility of $0.05cm^2/Vs$ in the dark, and the on/off current ratio of our TFT was about $5{\times}10^5$. It is concluded that jointly adopting IZO for the S/D electrode and PVP for gate dielectric realizes a high-quality P3HT-based TFT.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.163-163
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• 2012

We observed strain evolution of P3HT crystals in P3HT:PCBM films and the effect of Al electrode on the evolution during real time annealing process. Based on simple assumptions, both relaxed lattice parameters and thermal expansion coefficient could be quantitatively determined. P3HT:PCBM films displayed tensile strain in as-prepared samples regardless of the presence of an Al layer. In the absence of Al layer, P3HT crystals showed only strain relaxation at an annealing temperature of $180^{\circ}C$. Meanwhile In the presence of an Al layer, the strain was relaxed and changed to compressive strain at around 120C annealing temperature, which indicated a tightening of the thiophene ring packing. These behaviors support the improved performance of devices fabricated by post annealing process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.191-191
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• 2007

By employing a photo-sensitive PVA as a photoresist, we first demonstrated simultaneous patterning and passivation of P3HT active layer. The passivation layers were obtained by annealing the organic layers after developing PVA and over-etching the P3HT layer. The fabricated OTFTs were electrically characterized. The OTFTs after the passivation exhibited the field-effect of ${\sim}5.9{\times}10^{-4}cm^2/V{\cdot}s$, on/off current ratio of ${\sim}10^3$. The value of OTFTs a little degradation with time in air but it appeared different unpassivated OTFT.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.460-461
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• 2009

We studied the effects of post-annealing treatment on poly(3-hexylthiophene)(P3HT, donor):[6,6]-phenyl $C_{61}$ butyric acid methyl ester(PCBM, acceptor) blend film as an active layer in the organic solar cells(OSCs). For the formation of the active layer, 3 wt.% P3HT:PCBM solution in chlorobenzene were deposited by spin-coating method. In order to optimize the performance of OSCs, the P3HT crystallization and the redistribution of PCBM cluster at P3HT:PCBM composition as a function of post-annealing condition from room temperature to $200^{\circ}C$ were measured by the Hall effect and the UV-vis Spectrophotometer. We thought that the improved efficiency in the OSCs with post-annealing treatment at $150^{\circ}C$ can be explained by the efficient separation or collection of the photogenerated excitons at donor-acceptor interface by P3HT crystallization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.45-48
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• 2002

Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.426-433
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• 2008

We first demonstrated simultaneous patterning and passivation of P3HT active layer with photosensitive PVA. The passivation layers were obtained by annealing the organic layers after developing PVA and subsequent over-etching the P3HT layer. The fabricated OTFTs were electrically characterized. The OTFTs exhibited the mobility of ${\sim}5.9{\times}10^{-4}\;cm^2/V{\cdot}s$ and on/off current ratio of ${\sim}10^4$. After passivation, the results showed the extended lifetime of ${\sim}250$ hours with photosensitive PVA layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.57-60
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• 1998

Poly(3-hexylthiophene)(P3HT) was synthesized by use of FeCl$_3$ as a oxidizing agent at $25^{\circ}C$. The infrared spectrum of our polymer gave good evidence for the conjugation of 3-hexylthiophene monomer unit. P3HT contains the HT(head-to-tail) linkage larger than 64% based on NMR analysis. Electronic absorption and photoluminescence studies show that cast films of P3HT have three exciting state. Absorption spectrum was separated with three maximum peaks by Giese-French method and shifted to the shorter wavelength with increasing temperature. Separated absorption spectrum of P3HT is well adapted to PL peak appeared at longer wavelength. Low temperature PL spectrum is well separated at 669nm, 733nm and 812nm.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1140-1143
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• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFTs) for liquid crystal display that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (S/D) electrodes, gate dielectric layer, and gate electrode, respectively The $NiO_x$ S/D electrodes of which the work function is well matched to that of P3HT are deposited on a P3HT channel by electron-beam evaporation of NiO powder. The maximum saturation current of our P3HT-based TFT is about $15{\mu}A$ at a gate bias of -30 V showing a high field effect mobility of $0.079cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^5$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality P3HT-based TFT.

• Journal of the Korean Academy of Child and Adolescent Psychiatry
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• 제12권2호
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• pp.165-178
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• 2001

주의력결핍 ${\cdot}$ 과잉운동장애(이하 ADHD라 기술함)의 생화학적인 원인을 규명하고 개체발생적인 과정에 대한 이해를 하기 위하여 46명의 ADHD아동들과 18명의 발달성언어장애 아동들을 대상으로 혈장내 의 5-HT와 5-HIAA 함량을 측정하고 개체발생적인 과정에 대한 연구를 시행한 결과 다음과 같은 결과를 얻었다. 1) 대상군과 대조군에서 혈장 5-HT(serotonin) 함량비교에서는 혼합형(combined type)은 평균치 17.81 ng/ml, 주의력결핍형은 22.00ng/ml, 과잉운동 ${\cdot}$ 충동형은 24.75ng/ml 대조군의 평균치는 31.83 ng/ml로서 분산분석 결과 의미있는 차이가 관찰되었으며(F=4.33, df 3, 60, p<0.05), Scheffe씨법을 이용한 사후검증에서는 혼합형과 대조군간에는 의미있는 차이가 관찰되었으나 나머지 군간에는 의미있는 차이가 관찰되지 않았다. 2) 대상군과 대조군에서 혈장 5-HIAA함량 비교에서는 의미있는 차이가 관찰되지 않았다(F=2.08, df 3, 60, p>0.05). 3) ADHD전체군과 대조군간의 5-HT 및 5-HIAA함량비교에서는 5-HT함량의 평균치는 21.74ng/ml 이었으며, 대조군의 평균치는 31.83ng/ml로서 의미있는 차이가 관찰되었다(T=3.10, df 62, p<0.05). 그러나, 5-HIAA함량치는 의미있는 차이가 없었다(T=1.90, df 62, p>0.05). 4) ADHD군에서 TOVA소견과 5-HT 및 5-HIAA 함량간의 상관성에 있어서는 의미있는 상관성이 관찰되지 않았다. 5) ADHD군에서 DSM-IV소견과 5-HT 및 5-HIAA함량간의 상관성에 있어서도 의미있는 상관성은 관찰되지 않았다. 6) 대상군과 대조군에서 혈장 5-HT(serotonin)함량과 연령간의 상관성에 있어서는 모두 의미있는 상관성은 관찰되지 않았다(ADHD군：Pearson 상관계수 -0.20, 대조군：-0.05, 모두 p>0.05). 7) 대상군과 대조군에서 혈장 5-HIAA함량과 연령간의 상관성에 있어서도 모두 의미있는 상관성은 관찰되지 않았다(ADHD군：Pearson 상관계수 -0.17, 대조군：0.04, 모두 p>0.05). 이러한 소견으로 미루어 5-HT의 농도저하가 ADHD의 원인중의 일부로 작용할 가능성이 있으며, 5-HT 의 개체발생적인 측면에 있어서는 이상소견이 없을 가능성이 있다. 향후 생화학적인 소견에 의한 아형으로의 분류가 가능할 것으로 생각되면 이러한 분류에 의하여 약물에 대한 반응, 가족력의 차이 또는 예후에 대한 연구가 시행되어야 한다.