• Title/Summary/Keyword: P.E film

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Effects of Removing of Transparent Polyethylene Film on Garlic Growth, Yield and Weed Occurrence in double Layer mulching Cultivation (이중피복 마늘재배 시 투명P.E.필름 제거가 마늘 생육 및 수량과 잡초 발생에 미치는 영향)

  • Lee, Jae-Sun;Kim, In-Jae;Youn, Cheol-Ku;Ahn, Ki-Su;Kim, Ki-Hyen;Nam, Sang-Yong;Kim, Hong-Sig
    • Korean Journal of Organic Agriculture
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    • v.21 no.3
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    • pp.413-422
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    • 2013
  • This experiment was conducted to clarify the effect of double layer mulching on reducing the labor required to weed control and Leaf sheath training of the garlic cultivation. Six mulching methods(non-mulching, transparent P.E., rice hull+transparent P.E., sawdust+transparent P.E., rice straw+transparent P.E., black P.E. film+ transparent P.E.) were used for the experiment, and transparent P.E film was removed on April 10. Weed occurrence was in the order of black P.E. film< transparent P.E

Greenhouse Environment and Growth of Green Pepper (Capsicum annuum L.) in Greenhouse Covered with CEM BIO Film (CEM BIO Film 피복시설의 환경특성과 풋고추 생육)

  • Chun, Hee;Kim, Kyung-Je;Kwon, Young-Sam;Kim, Hyun-Hwan;Lee, Si-Young
    • Journal of Bio-Environment Control
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    • v.9 no.3
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    • pp.161-165
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    • 2000
  • Spectroradiometric light transmittance from 300 to 1,100nm in the greenhouse covered with the CEM BIO polyethylene film was greater than that in the greenhouse covered with polyethylene film (control). As a whole, solar radiation transmittance into greenhouse was a half level, due to shades caused by double layer covering, frame and equipment. Net radiation energy emitted throughout surface of the greenhouse covered with CEM BIO polyethylene film was 5,424.5W.m$^{-2}$ , which was lower by 2.9% as compared to that of the greenhouse covered with polyethylene film. Photosynthetically active radiation from 400 to 700nm of the greenhouse covered with CEM BIO polyethylene film was 3,861.2W.m$^{-2}$ , which was higher by 3.8% as compared to hat of the greenhouse covered with polyethylene film. Accumulated minimum air temperature from Oct. 7, 1997 to Oct. 16, 1997 of the greenhouse covered with CEM BIO polyethylene film was 100.5$^{\circ}C$, which was higher by 2.5$^{\circ}C$ as compared to that of the greenhouse covered with polyethylene film. As results, height, stem diameter, leaf count, leaf area, fresh weight and dry weight of green pepper plants and canopy production structure measured at 30 days after transplanting were enhanced. Mean fruit weight n the greenhouse covered with CEM BIO polyethylene film was 11.28 g and 1.25 g greater as compared to that in the greenhouse covered with polyethylene film, due to increased fruit diameter and flesh thickness. Percent marketable fruits produced in the greenhouse covered with CEM BIO polyethylene film were 96.1%, and was greater by 2.7% thant that of the greenhouse covered with polyethylnee film due to decreased infection, sterility, severe curve and twisted fruits. The green pepper yield of the greenhouse covered with CEM BIO polyethylene film from Nov. 19, 1997 to Feb. 3, 1998 was greater by 974 kg per hectare than that of the greenhouse covered with polyethylene film, but the total fruit had no difference.

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Effect of M.A.P. and C.A. storage on quality of Mushrooms(Agaricus bisporus) during storage (양송이 버섯의 MAP및 CA저장 효과)

  • 김준한;김종국
    • Food Science and Preservation
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    • v.2 no.2
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    • pp.225-232
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    • 1995
  • In order to study the effect of modified atmosphere packaging(M.A.P.) and controlled atmosphere(C. A.) storage on keeping freshness of mushrooms (Agricus-bisporus). Mushrooms was packaged with polyethylene(P.E.) film (40${\mu}{\textrm}{m}$, 60${\mu}{\textrm}{m}$, 80${\mu}{\textrm}{m}$) and C.A. conditions(CO2 concentration of 2%, O2 concentration of 2%) and storage at 0$\pm$1$^{\circ}C$, RH(relative hummidity) 92$\pm$1%. Gas composition in film was changed rapidly at early of storage, but it kept a constant level after 14 days of storage, and then kept at the level of 6~9% CO2 and 2~5% O2. Weight loss was 5% in non-packed mushrooms after 3 days of storage, but P.E. film, CO2 treated, C.A. conditions were 5% after 21 days of storage. Flesh firmness of the mushrooms was continuously decreased throughout storage period and the lowest of flesh firmness changed was 80${\mu}{\textrm}{m}$-P.E. film packing. Discoloration of the piteous of mushrooms appears to be the most Important factors to determine its marketability, L value of it appears to be of the high values at P.E. film packing and C.A. conditions during period. Large amount of ethanol and acetaldehyde were produced from the 7 days during storage, large contents of mannitol and trehalose were at the 14 days and 7 days during storage.

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Effects of lead metal and annealing methods on low resistance contact formation of polycrystalline CdTe thin film (다결정 CdTe박막의 저저항 접축을 위한 배선금속 및 열처리방법의 효과에 관한 연구)

  • 김현수;이주훈;염근영
    • Electrical & Electronic Materials
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    • v.8 no.5
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    • pp.619-625
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    • 1995
  • Polycrystalline CdTe thin film has been studied for photovoltaic application due to the 1.45 eV band gap energy ideal for solar energy conversion and high absorption coefficient. The formation of low resistance contact to p-CdTe is difficult because of large work function(>5.5eV). Common methods for ohmic contact to p-CdTe are to form a p+ region under the contact by in-diffusion of contact material to reduce the barrier height and modify a p-CdTe surface layer using chemical treatment. In this study, the surface chemical treatment of p CdTe was carried out by H$\_$3/PO$\_$4/+HNO$\_$3/ or K$\_$2/Cr$\_$2/O$\_$7/+H$\_$2/SO$\_$4/ solution to provide a Te-rich surface. And various thin film contact materials such as Cu, Au, and Cu/Au were deposited by E-beam evaporation to form ohmic contact to p-CdTe. After the metallization, post annealing was performed by oven heat treatment at 150.deg. C or by RTA(Rapid Thermal Annealing) at 250-350.deg. C. Surface chemical treatments of p-CdTe thin film improved metal/p-CdTe interface properties and post heat treatment resulted in low contact resistivity to p-CdTe.Of the various contact metal, Cu/Au and Cu show low contact resistance after oven and RTA post-heat treatments, respectively.

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Effects of Remanent Polarization State and Internal Field in Ferroelctric Film on the Hydrogen-induced Degradation Characteristics in Pt/Pb(Zr, Ti)O3/Pt Capacitor (강유전막의 잔류 분극 상태와 내부 전계가 Pt/Pb(Zr,Ti)O3/Pt 커패시터의 수소 열화 특성에 미치는 영향)

  • Kim, Dong-Cheon;Lee, Gang-Un;Lee, Won-Jong
    • Korean Journal of Materials Research
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    • v.12 no.1
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    • pp.75-81
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    • 2002
  • The ferroelectric properties of Pb(Zr,Ti)O$_3$[PZT] films degrade when the films with Pt top electrodes are annealed in hydrogen containing environment. This is due to the reduction activity of atomic hydrogen that is generated by the catalytic activity of the Pt top electrode. At the initial stage of hydrogen annealing, oxygen vacancies are formed by the reduction activity of hydrogen mainly at the vicinity of top Pt/PZT interface, resulting in a shift of P-E (polarization-electric field) hysteresis curve toward the negative electric field direction. As the hydrogen annealing time increases, oxygen vacancies are formed inside the PZT film by the inward diffusion of hydrogen ions, as a result, the polarization degrades significantly and the degree of P-E curve shift decreases gradually. The direction and the magnitude of the remnant polarization in the PZT film affect the motion of hydrogen ions which determines the degradation of polarization characteristics and the shift in the P-E hysteresis curve of the PZT capacitor during hydrogen annealing. When the remnant polarization is formed in the PZT film by applying a pre-poling voltage prior to hydrogen annealing, the direction of the P-E curve shift induced by hydrogen annealing is opposite to the polarity of the pre-poling voltage. The hydrogen-induced degradation behavior of the PZT capacitor is also affected by the internal field that has been generated in the PZT film by the charges located at the top interface prior to hydrogen annealing.

Photodissolution, photodiffusion characteristics and holographic grating formation on Ag-doped $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin film (Ag가 도핑된 칼코게나이드 $As_{40}Ge_{10}Se_{15}S_{35}$ 박막의 광분해, 광확산특성 및 홀로그래픽 격자형성)

  • Chung, Hong-Bay
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.10
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    • pp.461-466
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    • 2006
  • In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

Growth and Characterization of $CuInTe_2$ Single Crystal thin Films by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE) 방법에 의한 $CuInTe_2$ 단결정 박막 성장과 특성에 관한 연구)

  • 홍광준;이관교;이상열;유상하;정준우;정경아;백형원;방진주;신영진
    • Korean Journal of Crystallography
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    • v.11 no.4
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    • pp.212-223
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    • 2000
  • A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

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Preparation of sputter-deposited CuOx thin film with p-type conductivity and application as thin film transistor

  • So Jeong Park;Eui-Jung Yun
    • Journal of the Korean Physical Society
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    • v.81
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    • pp.867-875
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    • 2022
  • This paper explored the effect of deposition conditions on the characteristics of copper oxide (CuOx) thin films prepared by direct current (DC) magnetron sputtering. X-ray diffraction exhibited that CuO with n-type conductivity was the main composition regardless of the DC magnetron sputtering power whereas the phase transition from n-type CuO to p-type Cu2O was observed with decreasing the oxygen pressure (OP) from 40 to 20%. The optical band gap ranges of 1.6-1.9 eV, which are characteristic of n-type CuO, were determined for samples prepared with OPs of 30-40% while the optical band gap of 2.3 eV, which is characteristic of p-type Cu2O, was measured for samples prepared with an OP of 20%. In addition, only Cu+ X-ray photoelectron spectroscopy (XPS) peak at the ~932.6 eV position exists in the films deposited with an OP of 20%, whereas only Cu2+ XPS peaks at ~934.2 eV and in the range of 940-945 eV are observed in the films deposited with an OP of 40%. Furthermore, as a result of XPS depth profile analysis, it was confirmed that the composition ratio of the sample prepared at an OP of 20% was Cu2O, whereas the composition ratio of the sample prepared at an OP of 40% was CuO. These suggest that the CuOx thin films could be constantly converted from n-type CuO to p-type Cu2O by decreasing the oxygen partial pressure. Thin film transistors with Cu2O deposited at 20% OP revealed p-type characteristics such as onset voltage (VON) of -3 V, saturated hole mobility of 8 cm2/Vs at VGS = -28 V, subthreshold swing of 0.86 V/decade at VGS-VON = -0.5 V, and on/off ratio of 1.14 × 103.

Effect of Mulching Materials on Bolting and Growth in Angelica koreana Max. (피복재료가 강활의 추대 및 생육에 미치는 영향)

  • Lee, Sang-Seok;Choi, Hyo-Sim;Sohn, Hyoung-Rac;Hur, Bong-Koo;Oh, Sei-Myoung;Kim, Soo-Yong
    • Korean Journal of Plant Resources
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    • v.20 no.4
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    • pp.331-335
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    • 2007
  • This study was conducted to investigate the soil mulching effect on bolting and growth of Angelica koreana Max. The bolting ratio were 8.4% of non-mulching, 11.4% of black polyethylene film, 13.6% of transparent polyethylene film, 6.4% of rice-straw mulching. The mulching of polyethylene film induced higher bolting response than other materials. The radical leaf length, the number of leaf and crown in black P.E. film mulched were all higher than those of non-mulching and rice-straw mulching. The yield of the underground part of P.E film mulching was higher than non-mulching and rice-straw mulching. Comparing with other treatments, the dry root yield of black P.E. film mulching showed the most.

Studies on storing Chest - nut(Castanea crenata var. dulcis Nakai) Sealing with Polyethylene Film (밤의 Polyethylene Film 밀봉 저장 효과)

  • Lee, B.Y.;Yoon, I.H.;Kim, Y.B.;Han, P.J.;Lee, Ch.M.
    • Korean Journal of Food Science and Technology
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    • v.17 no.5
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    • pp.331-335
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    • 1985
  • Series of study were conducted to develop a method for longterm storage of chest-nut with preserving it's taste and freshness. Experiments were carried out with Korean chest-nut (Castanea crenata var. Okkwang) sealed in polyethylene (P.E) film stored under the ambient and low temperature. Summarized results are as follow: After the harvest, $CO_2$ produced by chest-nut at the early storage was increased with temperature increase. Q10 mg/kg/day, the temperature index of $CO_2$production, by chest-nut ranged 2.4-2.7. It was available to store chest-nut in good condition with 8-15% total loss upto the following may at the ambient temperature sealed in 0.03 mm P.E. film, and upto the following july at the low temperature if sealed in 0.03 or 0.05 mm P.E. film. Throughout the period from one month after the innitiation upto the end of the storage, the rate of $CO_2$and $O_2$ was maintained near the optimum condition for the CA storage of chest-nut. The taste of chest-nut was improved during the storage due to increased reducing-sugar and decreased wate soluble tannin. However, the taste become bitter and unacceptable from the early stage of the storage when used the thicker P.E. film (than above mentioned) for the sealing.

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