• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1288-1291
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• 2004

In this study, physical characteristics of alumina slurry on variation of pH value and the effect of non-ionic surfactants on alumina slurry for copper chemical mechanical planarization (CMP) slurry have been investigated. After pH value of the slurry with alumina abrasive was changed by adding various amount of $HNO^3$ or KOH, the differences of settling rate, particle size, and zeta-potential were estimated. Better settling rates were shown in slurries with alumina abrasive at near pH 1. Higher zeta-potential was shown at around pH 2 in alumina slurry and the point of zero charge (PZC) was measured at about pH $9\sim10$. Non-ionic surfactant was added in the slurry with 5wt% alumina abrasive to get its effect on slurry practically. Abrasive size was smaller increased when amount of surfactant increased in slurry with P-4 as abrasive; on the other side, it was smaller when amount of surfactant decreased with AES-12. Variation of zeta-potential has no tendency with adding surfactant; however, values of zeta-potential were between $35\sim50mV$. The proper amount of surfactant was $0.1\sim1.0wt%$ in slurry with P-4 and $0.5\sim1.0wt%$ in slurry with AES-12 respectively. Excellent dispersion stabilization was obtained by addition of non-ionic surfactant

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.284-287
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• 2017

The electrocaloric effect in $0.94(Bi_{0.5}Na_{0.5})TiO_3+0.06KNbO3+0.9wt%$ G.F.ferroelectricceramics was observed in terms of the temperature change (${\Delta}T$) of the fabricated ceramics, Curie temperature $T_c$, and applied electric field. The specimens were fabricated by a conventional solid-state reaction. $T_c$ appeared near $165{\sim}170^{\circ}C$. The P-E hysteresis showed a tendency to slim down with a temperature increase and finally was slimmest near $150^{\circ}C$. With the increase of temperature, the polarization revealed a gradual decrease, and a sharp decline near $T_c$. When an electric field of 45 kV/cm was applied, the largest polarization was shown. The maximum value of the temperature change (${\Delta}T=0.31^{\circ}C$) was obtained at $165^{\circ}C$ under an applied electric field of 45 kV/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.220-226
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• 2002

Amorphous $Sb_{2-x}Bi_xTe_3$ (x = 0.0, 0.5 and 1.0) thin films were prepared by vacuum evaporation. The resistivity of 7he films decreases from 1.4{\times}10^{-2}$ to $8.84{\times}10^{-5}\Omega cm$ and the type of conductivity changes from p to n with the increase of the x value of the films. D.C. conduction studies on these films ate performed at various electric fields in the temperature range of 303-403 K. At low electric fields, two types of conduction mechanisms, i.e. the variable range hopping and the phonon assisted hopping are found to be responsible for the conduction, depending upon the temperature. The activation energy decreases from 0.082 to 0.076 eV in the temperature range of 303-363 K and from 0.47-0.456 eV in the second range of 363-403 K, indicating the shift of the Fermi level towards the conduction band edge and hence the change of the conduction from P to n type with the increase of the Bi concentration. Poole-Frankel emission dominates at high fields. The shape of the potential well of the localized centre is deduced and the mean free path of the charge carriers is also calculated.

• Journal of Technologic Dentistry
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• v.31 no.3
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• pp.9-14
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• 2009

This study evaluated the mechanical properties of Ti-Cu alloys with the hope of developing an alloy for dental casting with better mechanical properties than unalloyed titanium. Ti-Cu alloys with four concentrations of Cu(2,5,10wt%) were made in an argon-arc melting furnace. The microstructure and micro-Vickers hardness were determined. X-ray diffraction pattern test was performed on the polished specimens. The microstructure of 2%Cu and 5%Cu alloys are shown acicular ${\alpha}Ti$ phase formed on the surfaces of previously formed $\beta$grains. The 10%Cu alloys has essentially a eutectoid structure; this structure includes lamella of ${\alpha}Ti$ and $Ti_2Cu$ phase that transformed from ${\alpha}Ti$ at the eutectoid temperature. The micro-Vickers hardness of CP Ti specimens was significantly(p<0.05) lower than that of any of the other alloys. Among the Ti-Cu alloys, the 10%Cu alloys exhibited a significantly(p<0.05) higher hardness value. but lower than that of Ti-6%Al-4%V alloy. From these results, it was concluded that new alloys for dental castings should be designed as Ti-Cu based alloys if other properties necessary for dental castings were obtained.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.133-137
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• 2004

The development of digital x-ray detector has been extensively progressed for the application of various medical modalities. In this study, we introduce a new hybrid-type x-ray detector to improve problems of a conventional direct or indirect digital x-ray image technology, which composed of multi-layer structure using a CaWO$_4$ phosphor and amorphous selenium (a-Se) photoconductor. The leakage current of our detector was found to be ∼180 pA/cm$^2$ at 10 V/m, which was significantly reduced than that of a single a-Se detector. The x-ray sensitivity was measured as the value of 4230 pC/cm$^2$/mR at 10 V/m. We found that the parylene thin film between a CaWO$_4$ phosphor and an a-Se layer acts as an insulator to prevent charge injection from indium thin oxide (ITO) electrode into an a-Se layer under applied bias.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.57.1-57.1
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• 2011

We studied the performance of CdSe nanoparticle in the active layer of organic photovoltaics (OPVs) by changing concentration of the CdSe NPs in the P3HT:PCBM layer. We observed that the absorption peak value gradually increases with the increasing amount of CdSe NPs at 600nm wave length. However, the electrical properties of OPVs correspond less with the tendency of UV/visible result. The highest performance was shown with 10% of CdSe NPs. The device performance decreased after 10% of CdSe NPs, this shows the dependencies of performanc of hybrid solar cells on the CdSe NPs loading amount. The resulting OPVs with 10 % of CdSe NPs show a short circuit current density ($J_{sc}$) of $6.96mA/cm^2$, open circuit voltage ($V_{oc}$) of 0.61V, fill factor (FF) of 0.59, and power conversion efficiency (PCE) of 2.53% under AM 1.5 ($100mW/cm^2$).

• Food Science and Preservation
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• v.9 no.2
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• pp.179-183
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• 2002

This study was carried out to set up alcohol fermentation condition for uncooked corn. Response surface methodology(RSM) was applied to optimize and monitor the alcohol fermentation condition with uncooked corn. The optimal yeast strain for fermentation of uncooked corn was Saccharomyces cerevisiae GRJ. The polynomial equation for alcohol contents, brix, pH and total acidity showed 0.8852, 0.9202, 0.8806 and 0.9940 of R$^2$, respectively. The optimal rendition for maximum alcohol contents were 0.18%(w/w) of enzyme concentration and 180%(v/w) of added water content. Predicted values at optimum alcohol fermentation condition agreed with experimental value.

• Journal of Applied Biological Chemistry
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• v.42 no.4
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• pp.175-179
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• 1999

Grape seed oil was extracted using different preparatory treatments as follows: (1) grinding, (2) grinding and roasting, (3) grinding and wet- roasting, (4) grinding, roasting, and wet-roasting, and (5) grinding, wet-roasting, and wet-roasting. The highest antioxidant activity was obtained from the sample with the method (2). Initial states of oxidation were similar except method (1) that showed more oxidized state, being P.O.V.8. Acid values were observed in the range from 1.42 to 1.89. The lowest acid value was found as 1.42 in method (1) and those of others were somewhat higher, indicating that heating process of roasting produced some free fatty acids. From the results of sensory evaluation, the best odor and taste were obtained from the methods (2) and (3). Repetitive procedure of wet-roasting, like method 5, caused some loss of flavor components and decrease in the sensory evaluation score. Addition of grape seed oil (method 2) to soybean and perilla oil at the level of 20% retained considerable antioxidant activities as much as 4.3 and 5 times, respectively, than 100% soybean or perilla oil stored for 12 weeks. When soybean or perilla oil was mixed with 20% grape seed oils, P.O.V. decreased to half of that of unmixed oils.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.111-118
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• 1997

The structrue of hydroxy-bisbenzoyloxy-allyloxycalix[4]arene (C45H36O6) has been determined by X-ray crystallography. The crystals are monoclinic, space group P21, unit cell constants a=11.045(3), b=33.545(2) c=10.319(4)Å, β=113.86(2)˚, Z=4, V=3496.0(1.8) Å3, DC=1.28 gcm-3. The intensity data were collected on an Enraf-Noninus CAD-4 Diffractometer with a graphite monochromated Mo-Kα radiation. The structure was solved by direct method and refined by full-matrix least-squares calculations to a final R value of 0.076 for 2945 observed reflections. Two independent enantiomeric molecules are crystallized in a 1:1 racemate mixture. They have the flattened cone conformation with the flattening hydroxy1 pheny1 rings. There is an intramolecular hydrogen bond in both molecules.

• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.5
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• pp.1-5
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• 1975

접합형 트린지스터와 발광다이오드(LED) 및 광도전소자(CdS)로서 구성된 광결합 전류안정부저항회로를 진안하였다. 이는 일반적으로 광트랜지스터보다도 더 예민한 것을 이용하여, CdS와 LED를 밀착 시켜서 LED에 흐르는 전류와 CdS의 실효저항변화로써 결합된 광결합방식을 택하였다. 트랜지스터의 콜랙터-에미터간에 인위적인 누변저항을 삽입하는 방법을 도입함으로써 부저항치 및 최대입력단자전압치를 임의로 변화할 수 있게 하였으며, 제안한 회로를 분석하고 또 이를 실험적으로 확인하였다. 누변저항을 1KΩ에서 30KΩ까지 변화시켰을 때 최대입력단자전압은 1.65V에서 4.22V로 변하였고, 부저항치는 -1.0KΩ에서 -10.0KΩ까지 변하였다. 또 실험치에 대한 계산치에의 상대백분최대오차가 11%이었다. A current stable negative resistance circuit has been constucted with combination of coulplementary symmetrical transistors, a light emitting diode and a photoconductive cell. The negative resistance(Rn) and break-over voltage(VBo) can be set at a designed value according to adjustment of the artificial leakage resistance of p-n-p transistor. The RN and VBo calculated in this designed circuit are checked though the experiments, the errors are found less than 11%.