• 한국세라믹학회지
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• 제30권4호
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• pp.289-298
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• 1993

Properties in terms of the variation of the glass compositions, which were density (p), molar volume(Vm), atom/ion packing density (Dp), refractive index (nD), transformation temperature (Tg), dilatometric softening point (Td), thermal expansion coefficient (α), Young's modulus (E), and knoop hardness (KHN) were investigated in CaO-SiO2 glasses and CaO-P2O5-SiO2 glasses containing less than 10mole% of P2O5. Those properties were measured by density measurement kit, Abbe refractometer, dilatometer, ultrasonic pulse echo equipment, and micro hardness tester. When CaO content was increased in CaO-SiO2 glasses, p, Dp, nD, Tg, Td, α, E and KHN were increased, while Vm was decreased. When P2O5 was added to the CaO-SiO2 glasses with constant CaO/SiO2 ratio as 1.07, p, Dp, nD, Tg, Td, α, E and KHN were decreased, while Vm was increased. When the amount of P2O5 in glasses was kept constant, the changes of the properties with variation of CaO content in the CaO-P2O5-SiO2 glasses were very similar to those of CaO-SiO2 glasses. These phenomena could be explained by the structural role of P2O5 in the CaO-P2O5-SiO2 glasses, which was polymerization of siicate structures and resulted in [PO4] monomer structure in glasses. Due to this structural characteristics, the bond strength and packing density were changed with compositions. Proportional relationships between 1) np and Dp, 2) Tg, Td, α and CaO content, 3) E and Vm-1, and 4) KHN and P2O5 content were evaluated in this investigation.

• 대한전자공학회논문지
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• 제19권6호
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• pp.52-54
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• 1982

p·Si-전해질 접합을 전해질로 6N H2SO4, 6N H2SO4(Ti3+), 6N H2SO4(Ti4+), 6N H2SO4(Ti4+/Ti3+)을 사용하여 만들었다. 이들 전해질중 6N H2SO4(Ti4-/Ti3+)을 사용할 때 p·Si 광음극이 안정하게 동학하며 높은 광전 감도를 가지고 있었다. p·Si-electrolyte junction are prepared by using p·Si photocatode in four different electrolytes such as 6N H2SO4, 6N H2SO4(Ti3+), 6N H2SO4(Ti4+), 6N H2SO4(Ti4+/Ti3+) respectively. Among those electrolytes 6N H2SO4(Ti4-/Ti3+) shows very good results, in which p·Si photocathode is stable.

• 한국분말재료학회지
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• 제6권4호
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• pp.286-293
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• 1999

This study was to analyse the relationship between process parameters of the sintered composite and plasma nitriding properties with pulsed DC plasma. Fe-40at%$SiC_p$ composites of full density were fabricated by hot pressing at 1100~$1150^{\circ}C$. Sintered Fe-40at%Al and Fe-40at%$Al/SiC_p$ alloys were nitrided under pulsed DC plasma. Excellent surface hardness in the FeAl alloys could be obtained by plasma nitriding. ($H_v$ :100gf, diffusion layer : 1100~$1450kg/mm^2$, matrix : 330~$360kg/mm^2$) The wear resistance of $FeAl/SiC_p$ composites were improved about by 4~6times than FeAl and nitrided $FeAl/SiC_p$ were improved about 2 times than $FeAl/SiC_p$ matrix.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 제17회 워크샵 및 추계학술대회
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• pp.191-202
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• 2005

비정질 실리콘 태양전지 대신에 열화가 더 적은 프로터결정 실리콘(pc-Si:H)을 상층전지 흡수층으로 사용한 고효율 실리콘계 적층형(pc-Si:H/$\mu$c-Si:H) 박막 태양전지를 개발하였다. 우선, 높은 전도도와 넓은 에너지 밴드갭 특성을 갖는 p-a-SiC:H 박막을 개발하였고, p/i 계면의 특성 향상을 위해 p-nc-SiC:H 완충층을 개발하였다. 프로터결정 실리콘 다층막을 제작하고 FTIR, 평면 TEM, 단면 TEM 측정을 통해 프로터결정 실리콘 다층막의 우수한 열화 특성의 원인을 규명하였다. 적층형 태양전지의 성능향상을 위해 n-p-p 구조의 터널접합을 제안, 제작하고 특성을 분석하였으며, pc-Si:H/a-Si:H 적층형 태양전지에 적용하여 성능향상을 이루었다. 양질의 하층전지용 마이크로결정 실리콘 박막을 증착하기 위하여 광CVD법과 플라즈마CVD법을 결합한 2단계 마이크로결정 실리콘 증착법을 개발하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.66-69
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• 1989

After reviewing previous work done on two piezoelectric thin films(PZT, ZnO), ZnO thin piezofim of 1-3UM is fabricated by sputtering on the different substrates(i. e., P+Si/N-Si, SiO2/P+Si/ N-Si, Al/SiO2/ P+Si/ N+Si). The result shows that ZnO piezofilm on the Al has the best c-axis orientation. One of applications for the ZnO piezofilm as an microvalve to control liquid flow is introduced, and which can be controlled electrically and remotely.

• 한국세라믹학회지
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• 제37권5호
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• pp.432-437
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• 2000

Thermoelectric properties of p-type SiGe alloys prepared by a RF inductive furnace were investigated. Non-doped Si80Ge20 alloys were fabricated by control of the quantity of volatile Ge. The carrier of p-type SiGe alloy was controlled by B-doping. B doped p-type SiGe alloys were synthesized by melting the mixture of Ge and Si containing B. The effects of sintering/annealing conditions and compaction pressure on thermoelectric properties (electrical conductivity and Seebeck coefficient) were investigated. For nondoped SiGe alloys, electrical conductivity increased with increasing temperatures and Seebeck coefficient was measured negative showing a typical n-type semiconductivity. On the other hand, B-doped SiGe alloys exhibited positive Seebeck coefficient and their electrical conductivity decreased with increasing temperatures. Thermoelectric properties were more sensitive to compaction pressure than annealing time. The highest power factor obtained in this work was 8.89${\times}$10-6J/cm$.$K2$.$s for 1 at% B-doped SiGe alloy.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.541-544
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• 1998

A SiGe p-channel MESFET using $\delta-doped$ layers is designed and the considerable enhancement of the current driving capability of the device is observed from the result of simulation. The channel consists of double $\delta-doped$ layers separated by a low-doped spacer which consists of Si and SiGe. A quantum well is formed in the valence band of the Si/SiGe heterojunction and much more holes are accumulated in the SiGe spacer than those in the Si spacer. The saturation current is enhanced by the contribution of the holes inthe spacer. Among the design parameters that affect the performance of the device, the thickness of the SiGe layer and the Ge composition are studied. The thickness of $0~300\AA$ and the Ge composition of 0~30% are investigated, and the saturation current is observed to be increased by 45% compared with a double $\delta-doped$ Si p-channel MESFET.

• 한국주조공학회지
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• 제20권2호
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• pp.89-96
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• 2000

The effects of modification processing on the refinement of primary Si and the wear behavior of hyper-eutectic Al-Si alloys have been mainly investigated. Refining effects of primary Si in Al-17%Si alloy was more efficient than that of B.390 alloy. Optimum condition of getting the finest primary Si microstructure was when AlCuP modifier is added into the melt at $750^{\circ}C$ and held it at $700^{\circ}C$ for 30 minutes. Wear loss in the specimens of as-cast condition decreases as the size of primary Si decreases, in the order of B.390 alloy, B.390 alloy with AlCuP addition, Al-17%Si alloy and Al-17%Si alloy with AlCuP addition. Wear loss in the aged condition of Al-17%Si alloy, B.390 alloy and B.390 alloy with AlCuP addition decreased due to the increase of compressive residual stress in the matrix by the aging treatment. While, wear loss increased in the aged specimens of Al-17%Si alloy with AlCuP addition and Hepworth addition in which compressive residual stress decreases by the aging treatment. Therefore, it is assumed that higher compressive residual stress in the matrix can reduce the wear loss in composite materials such as hyper-eutectic Al-Si alloys.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.348-349
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, Hz, and Ar gas at $1180^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84 V, over 140 V, 61nm, and $2.7\;{\times}\;10^{19}\;cm^3$, respectively. The p-n junction diodes fabricated on the poly 3C-SiC/Si(p-type) were obtained like characteristics of single 3C-SiC p-n junction diodes. Therefore, poly 3C-SiC thin film diodes will be suitable microsensors in conjunction with Si fabrication technology.

• 대한화학회지
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• 제54권6호
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• pp.711-716
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• 2010

비닐렌기에 플루오르 치환기를 도입한 새로운 전자발광 (EL) 고분자인 poly(m-silylphenyl-p-phenylene-difluorovinylene) (m-SiP-PPDFV)는 GILCH polymerization 방법에 의해 합성된다. 이들 고분자는 단층 구조 (ITO/PEDOT/polymer/Ca:Al)의 light-emitting diodes (LEDs)에서 EL 발광층으로 사용되었다. m-SiP-PPDFV는 $\lambda_{max}$ = 452 nm 주위에서 PL 발광파장을 나타내었고, $\lambda_{max}$ = 497 nm 주위에서 녹색의 EL 발광을 나타내었다. 고분자의 current-voltage-luminance (I-V-L) 특성에서는 4.0 V 정도에서부터 소자가 작동되기 시작하였다. 고분자의 전자 친화도를 증가시키는 m-SiP-PPDFV을 얻기 위해 m-SiP-PPV의 모든 비닐렌기에 두개의 플루오르기를 도입하였고, 이로 인하여 소자 구동에서 비닐렌기의 색 안정도를 나타냈었다. PPV 유도체들에서 일어나는 비닐렌기의 산화반응을 보호하는 플루오르기는 전자 끄는 효과를 가지고 있어 소자의 색 안정도를 유지시킨다. 이번 연구로, 보다 안정화된 PPV 유도체를 얻기 위해, 플루오르기가 비닐렌기에 도입될 수 있음을 보여주고 있다.