• Journal of the Korean Society for Heat Treatment
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• v.14 no.5
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• pp.282-285
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• 2001

Based on the mass balance of anion and cation fluxes, the parabolic rate constant ($K_p$) of oxide grown during the high-temperature oxidation of metal is theoretically calculated. It is assumed that the diffusion of oxygen anion and metal cation through oxide scale obeys the Fick's 1st law, the growth of oxide is controlled by the diffusion of ions, electrical potential gradient as driving force for diffusion of ions is ignored, and oxidation occurs within an existing oxide layer. Then, the parabolic rate constant can be expressed by $K_p=[2{\rho}_{MmOn}{M^2}_{MmOn}(mD_oC_o{^e}+nD_MC_M{^e})/nm]$.

• Bulletin of the Korean Chemical Society
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• v.32 no.9
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• pp.3411-3420
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• 2011

Kinetic and structural studies have been carried out on the effects of meso-tetrakis(4-sulfonatophenyl)-porphyrin ($H_2TPPS_4$) as an anionic and meso-tetrakis(3-N-methyl-pyridyl)porphyrin ($H_2TMPYP$) as a cationic porphyrin with adenosine deaminase (ADA) in 25 mM citrate/phosphate buffer, pH = 4-8, at $37^{\circ}C$ using UVvis spectrophotometry, circular dichroism (CD), fluorescence spectrophotometry as well as molecular dynamics (MD) and molecular docking. Kinetic results showed that the two porphyrins are non-competitive inhibitors. Increasing pH, increases $K_I$ and cationic porphyrin has a higher $K_I$ and lower binding constant ($K_b$) at all pH ranges. Analyzing the secondary structure revealed that both ligands decrease the secondary structure and that the anionic porphyrin is more effective.

• Journal of Technologic Dentistry
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• v.46 no.2
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• pp.28-35
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• 2024

Purpose: To evaluate the three-dimensional trueness of upper and lower denture bases produced using a digital light processing (DLP) printer and immersed in a constant-temperature water bath. Methods: An edentulous model was prepared and fitted with denture bases and occlusal rims manufactured using base plate wax. After scanning the model, denture bases, and occlusal rims, complete denture designs were created. Using the designs and a DLP printer, 10 upper and 10 lower complete dentures were manufactured. Each denture was scanned before (impression surface of upper denture base before constant temperature water bath [UBC] and impression surface of lower denture base before constant temperature water bath [LBC] groups) and after (impression surface of upper denture base after constant temperature water bath [UAC] and impression surface of lower denture base after constant temperature water bath [LAC] groups) immersion in the constant-temperature water bath. Scanned files were analyzed by comparing reference and scanned data, with statistical analysis conducted using the Kruskal-Wallis test (α=0.05). Results: Statistical analysis revealed no significant differences between the UBC and LBC groups, nor between the UAC and LAC groups (p>0.05). However, significant differences were observed between the UBC and UAC groups and between the LBC and LAC groups, i.e., before and after the constant-temperature water bath for both maxillary and mandibular denture bases (p<0.05). Conclusion: Denture bases not immersed in the constant-temperature water bath (UBC and LBC groups) exhibited error values within 100 ㎛, whereas those immersed in the water bath (UAC and LAC groups) showed error values exceeding 100 ㎛.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.379-382
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• 2010

In this study, in order to develop the lead-free piezoelectric ceramics with high piezoelectric and dielectric properties, $(K_{0.5}Na_{0.5})(Nb_{0.97}Sb_{0.03})O_3$ ceramics were fabricated using a conventional mixed oxide process and their piezoelectric and dielectric characteristics were investigated according to the $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$ addition. $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$ addition enhanced density, electromechanical coupling factor($k_p$) piezoelectric constant $d_{33}$ and mechanical quality factor($Q_m$). At the 0.9 mol% $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$ addition, density, electromechanical coupling factor($k_p$), dielectric constant(${\varepsilon}_r$) and piezoelectric constant($d_{33}$) of specimen showed the optimum values of 0.46, 471, and 148 pC/N, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.175-176
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• 2008

In this study, in order to develop the composition ceramics for lead-free ultrasonic motor, $[(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}(Nb_{0.96}Sb_{0.04})]O_3$ ceramics were fabricated using $Ag_2O$ as sintering aid and a conventional mixed oxide process and their piezoelectric and dielectric characteristics were investigated according to the $SrTiO_3$ substitution. $SrTiO_3$ substitution enhanced density, dielectric constant$(\varepsilon_r)$ and electromechanical coupling factor$(k_p)$. However, mechanical quality factor was deteriorated. At the 0.5mol% $SrTiO_3$ substitution, density, electromechanical coupling factor$(k_p)$, dielectric constant$(\varepsilon_r)$ and piezoelectric constant$(d_{33})$ of specimen showed the optimum value of 4.437g/$cm^3$, 0.457, 1294, 265pC/N, respectively.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.4
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• pp.479-482
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• 1995

In this study, to improve sintering condition, anisotropic properties ( $k_{t}$/ $k_{p}$) of electromechanical coupling coefficient and piezoelectric constant $d_{h}$ and $g_{h}$, Mn $O_{2}$ impurity was added to the (P $b_{0.76}$C $a_{0.24}$)[( $Co_{1}$2/ $W_{1}$2/)$_{0.04}$ $Ti_{0.96}$] $O_{3}$ ceramics for application to hydrophone devices. Electromechanical coupling coefficients of the specimen with 1.5 [mol%] Mn $O_{2}$ sintered at 1150.deg. C were $k_{t}$=49% and $k_{p}$ = O, which exibited the highest value in piezoelectric anisotropic properties (kt/kp). Without relations with sintering temperature, the highest value of hydrostatic piezoelectric constant $d_{h}$ & $g_{h}$ were shown at the specimen with 1.5 [mol%] Mn $O_{2}$. Accordingly, the best addition amount of Mn $O_{2}$ was 1.5 [mol%] and proper sintering temperature was 1150.deg. C. Hydrostatic piezoelectric constant values of $d_{h}$=64.52[10$^{-12}$ C/N], $g_{h}$=35.92[10$^{-3}$ Vm/N] in the above condition were effectiely extended for hydrophone applications.pplications.ons.

• Journal of environmental and Sanitary engineering
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• v.18 no.3 s.49
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• pp.35-42
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• 2003

The electric resistance and constant current were investigated on the nickel-thallium-phosphorus alloy deposits by electroless-plating. The Ni-Tl-P alloy deposits were achieved with a bath using sodium hypophosphit as the reducing agent and sodium citrate as the comlexing agent. The basic plating solution is composed of 0.1M NiSO$_4$, 0.005${\sim}$0.0IM Tl$_2$S0$_4$, 0.1${\sim}$O.2M sodium hypophosphite and 0.02${\sim}$O.IM sodium citrate and the plating condition were pH 5${\sim}$6, temperrature 80$_4$90${\circ}$C. The results obtained are summarized as follows: 1) The crystal structure of deposit was amorphous structure as deposited state, became microcrystallized centering on Ni(111) plane by heat treatment at 200${\circ}$C, and grew as polycrystalline Ni, Ni$_3$P, Ni$_5$p$_2$,Tl, etc. by heat treatment higher than 350${\circ}$C. The grain size of plated deposits was grown up to 28.3~42.0nm by heat treatment for 1hour at 500${\circ}$C. 2) The electrical resistivity showed a comparatively high value of 192.5$_4$208.3 ${\mu}$${\Omega}$Cm and its thermal stability was great with resistivity value less than 0.22% in the thermal surroundings of 200${\circ}$C. 3) Ni-Tl-P alloy deposit showed such good constant current-making-effect in the variation of electric voltage, heat treatment temperature, and the composition of the deposit that it can be put to practical use as the matter of constant current device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.228-233
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• 2010

We studied the optical characteristics correlated with low dielectric constants of low-k SiOCH thin films through ellipsometry. The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The Si-O-CHx, Si-O-Si, Si-CHx, CHx and Si-H bonding groups were specified by FTIR spectroscopic spectra, and the groups coupled with the nano-porous structural organic/inorganic hybrid-type of SiOCH thin films which has extremely low dielectric constant close to 2.0. The structural groups includes highly dense pore as well as ions in SiOCH thin films affecting to complex refraction characteristics of single layer on the p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-light source in the range from 190 nm to 2100 nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.533-540
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• 1997

The microwave dielectric properties of ((P $b_{1-x}$ C $a_{x}$)Zr $O_3$ and (P $b_{0.63}$,C $a_{0.37-x}$ $M_{x}$)Zr $O_3$(M=Mg,Sr) ceramics were investigated. In (P $b_{1-x}$ C $a_{x}$)Zr $O_3$ (X=0.33~0.40) ceramics, high quality factor and small temperature coefficient of resonant frequency were obtain in (P $b_{0.63}$C $a_{0.37}$)Zr $O_3$with perovskite structure. In the case of (P $b_{0.63}$C $a_{0.37-x}$M $g_{x}$)Zr $O_3$ dielectric constant temperature coefficient of resonant frequency increased and quality factor decreased due to increase of polarization of A-O bonding. When replacing Ca ion with Sr ion with large ion radius, polarization decreased with increased of bonding length and thus dielectric constant and temperature coefficient of resonant frequency decreased.decreased.creased.

• Korean journal of applied entomology
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• v.7
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• pp.57-59
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• 1969

Effect of light on conidial formation of Colletotrichum panacicola, C. gloeosporioides, C. runcatum and C. nicotianae was examined on potato dextrose agar on which each conidial suspension was seeded. The light source was Mitsubishi day light fluorescent lamps wi th an intensity of 100-120 ft-c at the colony surface. The treatments were (i)constant light, (ii) constant darkness, and (iii) alternating light (11hr.) and darkness {13hr.) at $26\{\circ}C\pm2$. With the exception of C. nicotianae, constant light gave the greatest sporulation over that obtained in the other two treatments; there were on significant differences in number of sporulation between under constant darkness and alternating light and darkness. C. nicotianae resulted in maximum. inter mediate and minimum sporulation under alternating light and darkness. constant darkness and constant light, respectively. These differences were statistically significant at $5\%$ level. C. truncatum and C. nicotianae produced abundant conidia in the entire test; C. gloeosporioides was intermediate, and C. panacicola was the least. Differences in number of sporulation due to light. organisms. and t he interaction of these two were all statistically significant.