• International Journal of Safety
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• v.9 no.1
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• pp.43-46
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• 2010

In the recycle process of organic solvent, the atmospheric oxygen can cause autoxidation and product peroxide. The time-saving method to evaluate the hazards has been required. In this study, oxygen pressure monitoring experiment was proposed as a new method to evaluate autoxidative resistances of solvents. Some of organic solvents were pressurized by oxygen and kept under isothermal condition. At the same time, the pressure in the vessel tracked. Iodometrical titration, thermal analysis and spectroscopic analysis were performed to measure peroxide concentration, the heat of reaction and chemical bonding change. From the results that THF has larger oxygen consumption rate than CPME, it is considered that autoxidative resistance of THF is lower than that of CPME. This method enables to obtain results in shorter time than other methods. These experimental results were consistent with the previous research with longer test durations [1-2].

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.516-520
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• 2007

Indium tin oxide, which is used as transparent conducting layer in flexible device, is deposited on PET film by a magnetron sputtering in 300 mm wide roll-to-roll process (vacuum web coating). Sheet resistance, specific resistance and transmittance is differed by sputtering parameters such as working pressures, oxygen partial pressure, and thickness of ITO layer. ITO layer is deposited about 90 nm at roll speed of 0.24 m/min and its sputtering power is 3 kW. From the XRD spectrum deposited ITO layer is verified as amorphous. Under working pressure varied from $3{\times}10^{-4}\;Torr$ to $2{\times}10^{-3}\;Torr$, sheet resistance is lowest at the working pressure of $1{\times}10^{-3}\;Torr$ and its value is from $110\;{\Omega}/{\square}$ to $260\;{\Omega}/{\square}$ at the thickness of 90 nm. Oxygen partial pressure also varies sheet resistance and is optimized at the regime from 0.2% ($1.8{\times}10^{-6}\;Torr$) to 0.6% ($6{\times}10^{-6}\;Torr$). In this oxygen partial pressure sheet resistance is lower than $150\;{\Omega}/{\square}$. As ITO layer thickness increases, sheet resistance decreases down to $21\;{\Omega}/{\square}$ and specific resistance is about $7.5{\times}10.4{\Omega}cm$ in 340 nm thickness ITO layer. Transmittance is measured at the wavelength of 550 nm and is about 90% for 180 nm thickness ITO/PET.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.533-537
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• 1999

ATO(Sb doped $SnO_2$) thin films whose thicknesses were 600, 1100 and $2100\AA$ were prepared by DC magnetron sputtering method. They showed the lowest resistivity at DC sputtering power 0.24kW and had lower resistivity with increasing thickness. The power dependence of resistivity among ATO thin films was also different with thickness. The increase of carrier concentration in ATO thin films was responsible for the decrease of resistivity with thickness increase. ATO thin films which were prepared at 30sccm oxygen flow rate showed a great change of sheet resistance under 1M HCl solution. The investigation of SAM(Scanning Auger Microprobe) revealed that oxygen atomic percentage on the surface of ATO thin films was changed. The decrease of sheet resistance also occurred when ATO thin films, prepared at 30sccm oxygen flow rate, were exposed to air for a long period of time. For this reason, it was considered that the desorption of oxygen on ATO surface was accelerated by HCl.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.231-232
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• 2007

Nickel oxide thin films were deposited by the DC magnetron reactive sputtering process under the conditions such as various oxygen flow rates(0, 3, 6, 8, 10 sccm) with constant 33 sccm argon flow rate for the sputtering time of 40 second with the power of 0.3 kW. Sheet resistances were measured by the four point probes. In order to observe discharge voltage characteristics according to the oxygen flow rates, the sputtering processes were performed under the powers of 0.2kW and 0.3kW. The feasibility of the coating system for high quality ferromagnetic thin films was tested through the electromagnetic simulation and the thin film thickness measurement from the experiment. It was shown that a discharge voltage was decreased under the low power and low oxygen flow rate, since the oxygen was quickly saturated on nickel target surface. The sheet resistance was increased as oxygen flow rate increased. The film thickness deposited by the coating system for ferromagnetic target was improved approximately 10% in comparison with previous coating systems.

• Journal of the Korean Ceramic Society
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• v.56 no.2
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• pp.197-204
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• 2019

An electrochemical oxygen permeating membrane (OPM) is fabricated using Zr_0.895Sc_0.095Ce_0.005Gd_0.005O_2-δ (ScCeGdZ) as the solid electrolyte and aLa_0.7Sr_0.3MnO₃-bScCeGdZ composite (LZab, electrode) as the electrode. The crystal phase of the electrode and the microstructure of the membrane is investigated with X-ray diffraction and scanning electron microscopy. The electrochemical resistance of the membrane is examined using 2-p ac impedance spectroscopy, and LZ55 shows the lowest electrode resistance among LZ82, LZ55 and LZ37. The oxygen permeation is studied with an oxygen permeation cell with a zirconia oxygen sensor. The oxygen flux of the OPM with LZ55 is nearly consistent with the theoretical value calculated from Faraday's Law below a critical current. However, it becomes saturated above the critical current due to the limit of the oxygen ionic conduction of the OPM. The OPM with LZ55 has a very high oxygen permeation flux of ~ 3.5 × 10^-6 mol/㎠s in I = 1.4 A/㎠.

• BMB Reports
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• v.53 no.2
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• pp.88-93
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• 2020

Cisplatin is a widely used anti-cancer agent. However, the effectiveness of cisplatin has been limited by the commonly developed drug resistance. This study aimed to investigate the potential effects of endoplasmic reticulum (ER) stress to overcome drug resistance using the cisplatin-resistant A2780/CisR ovarian cancer cell model. The synthetic chalcone derivative (E)-3-(3,5-dimethoxyphenyl)-1-(2-methoxyphenyl)prop-2-en-1-one (named DPP23) is an ER stress inducer. We found that DPP23 triggered apoptosis in both parental cisplatin-sensitive A2780 and cisplatin-resistant A2780/CisR ovarian cancer cells due to activation of reactive oxygen species (ROS)-mediated unfolded protein response (UPR) pathway in the endoplasmic reticulum. This result suggests that ROS-mediated UPR activation is potential in overcoming drug resistance. DPP23 can be used as a target pharmacophore for the development of novel chemotherapeutic agents capable of overcoming drug resistance in cancer cells, particularly ovarian cancer cells.

• Journal of Korean Port Research
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• v.14 no.4
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• pp.475-479
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• 2000

A possibility of the implementation of a quartz crystal sensor to the determination of chemical oxygen demand is examined by checking the electrochemical behavior of the sensor in a glucose solution. Since the surface of a quartz crystal has to be oxidized, a relatively active metal is coated on the surface of a usual 9 MHz AT-cut crystal. The electrochemical behavior is investigated by measuring the changes of current, resonant frequency and resonant resistance while a constant potential is applied. The crystal is installed in a specially designed container, and a quartz crystal analyzer is utilized to measure the frequency and resistance simultaneously. The variations of the measurements are examined at different concentrations of glucose solution, and a proper relation between the concentrations of glucose solution, and a proper relation between the concentration and the measurements is analyzed. As a result, it is found that a linear relation between the concentration of less than 900 ppm and the peak current when a constant potential of -180 mV (SSCE) is applied. The relation can be utilized for the determination of glucose concentration in sea water, and considering a direct relation between gluose concentration and chemical oxygen demand tells a possibility of the measurement of chemical oxygen demand using quartz crystal oscillators.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.307-307
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• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• Journal of Life Science
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• v.18 no.11
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• pp.1612-1616
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• 2008

Aerobic capacity is an important health indicator which is related to the probability of disease, disability, and mortality. Typically, endurance exercise is known as the primary method of improving aerobic capacity. Although most of resistance exercises are not considered for a good method increasing aerobic capacity, low to moderate intensity resistance exercise with short rest periods may improve aerobic capacity, especially old adults and most low to moderate risk patients suffering from CAD. This review is to understand that a number of physiological changes occur during both aerobic and resistance exercise, and to support that resistance exercise has advantages for improving aerobic capacity.

• Transactions of the Korean hydrogen and new energy society
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• v.27 no.4
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• pp.404-411
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• 2016

To select appropriate oxygen carrier candidates for chemical looping combustion, reduction characteristics of seven oxygen carriers were measured and discussed using three different reduction gases, such as $H_2$, CO, and $CH_4$. Moreover, attrition losses of those oxygen carriers also measured and compared. Among seven oxygen carrier particles, OCN703-1100 and NiO/bentonite particles showed higher oxygen transfer capacity than other particles, but these particles showed more attrition loss than other particles. C14 and C28 particles which used as cheap oxygen carriers in European country showed lower oxygen transfer capacity and less attrition loss. Based on the experimental results, we could select OCN717-R1SU, NC001, and N002 particles as candidates for future works because these oxygen carriers showed enough oxygen transfer capacity and good attrition resistance.